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Multi-disciplinary University Research Initiative (MURI) 2010

Vanderbilt’s Multi-disciplinary University Research Initiative (MURI) grant was in the area of Radiation Effects on Emerging Electronic Materials and Devices and was active from 2005 to 2010. This program was managed by Kitt Reinhardt of the Air Force Office of Scientific Research. Participating universities included Vanderbilt University, Arizona State University, the University of Florida, Georgia Tech, North Carolina State University, and Rutgers University. The research program focuses on using experiments and advanced simulation methods to understand the effects of radiation on new microelectronic technologies.

                                                                                                                                   

2010 MURI Presentations (Review Meeting, May 25th, 2010, Vanderbilt University) Listed in Order of Presenter

MURI OVERVIEW (RON SCHRIMPF, VANDERBILT UNIVERSITY)

OVERVIEW: ATOMIC-SCALE THEORY OF RADIATION-INDUCED PHENOMENA  (SOKRATES PANTELIDES, VANDERBILT UNIVERSITY)

EFFECT OF AMBIENT HYDROGEN ON RADIATION-INDUCED INTERFACE-TRAP FORMATION (DAVID HUGHART, VANDERBILT UNIVERSITY)

OVERVIEW: RADIATION EFFECTS IN EMERGING MATERIALS (LEN FELDMAN, VANDERBILT UNIVERSITY AND RUTGERS UNIVERSITY)

RADIATION EFFECTS IN ADVANCED GATE STACKS (ERIC GARFUNKEL, RUTGERS UNIVERSITY & GENNADI BERSUKER, SEMATECH)

TOTAL DOSE EFFECTS IN SIC AND GE MOS DEVICES   (CHER ZHANG, VANDERBILT UNIVERSITY)

DEFECTS IN NON -CRYSTALLINE ALTERNATIVE TRANSITION METAL DIELECTRICS   (GERRY LUCOVSKY, NORTH CAROLINA STATE UNIVERSITY)

RADIATION EFFECTS IN SIGE DEVICES   (JOHN CRESSLER AND STAN PHILLIPS, GEORGIA TECH)

TOTAL IONIZING DOSE AND SINGLE EVENT EFFECTS IN STRAINED SI TECHNOLOGIES (SCOTT THOMPSON AND HYUNWOO PARK, UNIVERSITY OF FLORIDA)

PHYSICS FOR SIMULATION OF SINGLE EVENT TRANSIENTS   (DAN CUMMINGS AND MARK LAW, UNIVERSITY OF FLORIDA)

APPLICATIONS OF MONTE CARLO RADIATIVE ENERGY DEPOSITION (MRED) TO ADVANCED TECHNOLOGIES   (ROBERT REED AND BOB WELLER, VANDERBILT UNIVERSITY)

SINGLE-EVENT TRANSIENT PULSE-WIDTH MEASUREMENTS IN ADVANCED TECHNOLOGIES  (MATT GADLAGE, VANDERBILT UNIVERSITY)

MODELING TOTAL IONIZING DOSE EFFECTS IN DEEP SUBMICRON BULK CMOS TECHNOLOGIES  (HUGH BARNABY, ARIZONA STATE UNIVERSITY)

LAYOUT-RELATED STRESS EFFECTS IN TID-INDUCED LEAKAGE CURRENT   (NADIA REZZAK, VANDERBILT UNIVERSITY AND MIKE ALLES, INSTITUTE FOR SPACE AND DEFENSE ELECTRONICS)

TOTAL-DOSE EFFECTS ON MSDRAMS (FARAH EL-MAMOUNI, VANDERBILT UNIVERSITY)

RADIATION EFFECTS ON ZRAMS  (ENXIA ZHANG, VANDERBILT UNIVERSITY)

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