Vanderbilt’s Multi-disciplinary University Research Initiative (MURI) grant was in the area of Radiation Effects on Emerging Electronic Materials and Devices and was active from 2005 to 2010. This program was managed by Kitt Reinhardt of the Air Force Office of Scientific Research. Participating universities included Vanderbilt University, Arizona State University, the University of Florida, Georgia Tech, North Carolina State University, and Rutgers University. The research program focuses on using experiments and advanced simulation methods to understand the effects of radiation on new microelectronic technologies.

2008 MURI Presentations (Review Meeting, May 13th & 14th, Vanderbilt University) Listed in Order of Presenter

MURI Overview (Ron Schrimpf, Vanderbilt University, PDF, 12MB)

Overview: Atomic-Scale Theory of Radiation-Induced Phenomena   (Sokrates Pantelides, Vanderbilt University, PDF, 5MB)

Displacement Damage Effects in Single-Event Gate Rupture   (Matt Beck, Vanderbilt University, PDF, 3MB)

Role of Hydrogen in Aging of Electronics   (David Hughart and Sasha Batyrev, Vanderbilt University, PDF, 6MB)

Effects of Aging and Moisture on 1/f Noise in MOS Devices (Xing Zhou, Vanderbilt University – PDF, 749KB)

Defects in Non-Crystalline and Nano-Crystalline Alternative Transition Metal Dielectrics (Gerry Lucovsky, North Carolina State University, PDF, 33MB)

Total Dose Response of Ge-substrate MOS Capacitors (Rajan Arora, Vanderbilt University, PDF, 832KB)

Total Dose Effects on Ge pMOSFETs with High-k Gate Stacks: On – Off Current Ratio (Shrinivasrao Kulkarni, Vanderbilt University, PDF, 2M)

Overview: Radiation Effects in Emerging Materials  (Len Feldman, Vanderbilt University, PDF, 5MB)

Interface Structure and Charge Trapping in HFO2-based MOSFETs (Sriram Dixit, Vanderbilt University, PDF, 6MB)

Materials Stability, Band Alignment and Defects in CMOS Nano-electronics (Eric Garfunkel, Rutgers University, Gennadi Bersuker, Sematech, PDF, 2MB)

Total Dose and Single Event Effects in Strained SI Technologies   (Scott Thompson, University of Florida, PDF, 12MB)

Single-Event Transients in Strained-Si Devices  (Mark Law, University of Florida, PDF, 3MB)

Single-Event Transient Pulse-Width Measurements in Advanced Technologies  (Balaji Narasimham, Vanderbilt University, PDF, 3MB)

Assessing Alpha Particle Single Event Transient Vulnerability in a 90-nm CMOS Technology  (Matt Gadlage, Vanderbilt University/NAVSEA Crane, PDF, 5MB)

Analysis of Single-Event Latchup Cross-section in 65 nm SRAMs  (John Hutson, Vanderbilt University, PDF, 4MB)

Overview: Monte Carlo Radiative Energy Deposition (MRED) Code   (Bob Weller, Vanderbilt University, PDF, 4MB)

Radiation Effects in SiGe Devices  (John Cressler, Georgia Tech, PDF, 4MB)

Radiation-Induced Current Transients in SiGe HBTs  (Jonathan Pellish, Vanderbilt University, PDF, 2MB)

Modeling Total Ionizing Dose Effects in Deep Submicron Bulk CMOS Technologies (Hugh Barnaby, Arizona State University, PDF, 8MB)

Effects of Hydrogen on Device Total Ionizing Dose and Dose Rate Response  (Jie Chen, Arizona State University, PDF, 4MB)

Gate-Length and Drain-Bias Dependence of Band-To-Band Tunneling (BTB) Induced Drain Leakage in Irradiated Fully Depleted SOI Devices (Farah El-Mamouni, Vanderbilt University, PDF, 6MB)

Virtual Irradiation: Single Event Rate Prediction for Advanced Technologies  (Kevin Warren, ISDE/Vanderbilt University, and Robert Reed, Vanderbilt University, PDF, 3MB)

Distribution of Proton-Induced Transients in Silicon Focal Plane Arrays  (Christina Howe, Vanderbilt University, PDF, 1MB)

Device-Orientation Effects on Single Event Upsets in 65-nm SRAMs (Alan Tipton, Vanderbilt University, PDF, 1MB)