2007 MURI Presentations (Review Meeting, June 14th & 15th, Vanderbilt University) Listed in Order of Presenter

Radiation Effects on Emerging Electronic Materials and Devices  (Ron Schrimpf, Institute for Space and Defense Electronics, Vanderbilt University, 5.53 MB, PowerPoint)

Atomic-Scale Theory of Radiation-Induce Phenomena  (Sok Pantelides, Vanderbilt University Department of Physics and Astronomy, 3.53 MB, PowerPoint)

Hf Impurities in Si/SiO2 / HfO2 Stacks  (Apostolos Marinopoulos, Vanderbilt University, Department of Physics & Astronomy, 1.2 MB, PowerPoint)

Quantum Mechanical Description of Displacement Damage (Matthew Beck, Vanderbilt University, Department of Physics and Astronomy, 3.1 MB, PowerPoint)

Role of Hydrogen in Radiation Response of Lateral PNP Bipolar Transistors  (Sasha Batyrev, Vanderbilt University, Department of Physics and Astronomy, 222 KB, PowerPoint)

Doping-type Dependence of Damage in Si Diodes Exposed to X-ray, Proton, and He+ Irradiation (Dan Fleetwood, Institute for Space and Defense Electronics, Vanderbilt University EECS, 1 MB, PowerPoint)

Length Scales of Order and Defects in Nano-crystalline and Non-crystalline Hf-based High/Medium-k Gate Dielectrics (Gerry Lucovsky, NC State University, Department of Physics, 5.1 MB, PowerPoint)

Total Dose Response of HfSiON MOS Capacitors (Dakai Chen, Vanderbilt University, EECS, 6.47 MB, PowerPoint, 771 KB)

Radiation Effects in Emerging Materials (Len Feldman, Vanderbilt University, Department of Physics and Astronomy, PowerPoint, 3.7 MB)

Radiation Induced Charge Trapping in Ultra-Thin HfO2 Based MOSFETs  (Sriram Dixit, Vanderbilt University, Interdisciplinary Materials Science Program, PowerPoint, 2.5 MB)

Materials Stability, Band Alignment and Defects in CMOS Nanoelectronics  (Eric Garfunkel, Rutgers University, Adobe PDF, 1.7 MB)

Reliability Assessment for New Materials: Generation and Activation of Electrical Defects in High-k Gate Stacks  (Gennadi Bersuker, SEMATECH, PowerPoint, 1.98 MB)

Radiation Effects in SiGe Devices   (John Cressler, Georgia Institute of Technology, School of Electrical and Computer Engineering, PowerPoint, 10.2 MB)

The Effects of Angle of Incidence and Temperature on Latchup in 65nm Technology   (John Hutson, Vanderbilt University, EECS, PowerPoint, 2.2 MB)

Radiation Challenges in Strained MOSFETs   (Scott Thompson, University of Florida, PowerPoint, 24.1 MB)

Quicktime Presentation: Flexure Jig Demo  (Scott Thompson, University of Florida, 15.3 MB)

Total Ionizing Dose Effects in Silicon Technologies and Devices  (Hugh Barnaby, Arizona State University, Electrical Engineering, PowerPoint, 887 KB)

Band-To-Band Tunneling (BBT) Induced Leaked Current Enhancement in Irradiated Fully Depleted SOI Devices   (Philippe Adell, Jet Propulsion Laboratory, PowerPoint, 352 KB)

Studying the Effect of Molecular Hydrogen on Silicon device Radiation Response Using Gated Bipolar Transistors   (Jie Chen, Arizona University, Electrical Engineering, PowerPoint, 771 KB)

Device Simulation for Single-Event Effects (Mark E. Law, University of Florida, SWAMP Center, PowerPoint, 4.1 MB)

Overview: RADSAFE & MRED   (Robert A. Weller, Institute for Space and Defense Electronics, Vanderbilt University, Adobe PDF, 3.2 MB)

Impact of Ion Energy and Species on Single Event Effect Analysis   (Robert A. Reed, Institute for Space and Defense Electronics, Vanderbilt University, Adobe PDF, 3.3 MB)

Measurement and Simulation of the Variation in Proton-Induced Energy Deposition in Large Silicon Diode Arrays   (Christina L. Howe, Vanderbilt University EECS, PowerPoint, 2 MB)

Neutron-Induced Multiple-Bit Upset   (Alan D. Tipton, Vanderbilt University, EECS, PowerPoint, 1.1 MB)

The Effect of Voltage Fluctuations on the Single Event Transient Response of Deep Submicron Digital Circuits  (Matthew J. Gadlage, Vanderbilt University / NAVSEA Crane, PowerPoint, 1.8 MB)