Vanderbilt’s Multi-disciplinary University Research Initiative (MURI) grant was in the area of Radiation Effects on Emerging Electronic Materials and Devices and was active from 2005 to 2010. This program was managed by Kitt Reinhardt of the Air Force Office of Scientific Research. Participating universities included Vanderbilt University, Arizona State University, the University of Florida, Georgia Tech, North Carolina State University, and Rutgers University. The research program focuses on using experiments and advanced simulation methods to understand the effects of radiation on new microelectronic technologies.

2005 MURI Presentations (Kick-Off Meeting, May 9th & 10th, Vanderbilt University)

MURI Overview (Ron Schrimpf, Vanderbilt, 2.33 MB)

First-Principles Calculations of Radiation-Induced Pheonmena (Sok Pantelides, Vanderbilt, 2.20 MB)

Total-Dose Response and Negative-Bias Temperature Instability (Dan Fleetwood, Vanderbilt, 2.20 MB)

Characterization of Radiation Effects in New Materials (Len Feldman, Vanderbilt, 16.1 MB)

Novel Dielectricts for Advanced Semiconductor Devices  (Christano Krug and Gerry Lucovsky, North Carolina State University, 966 KB)

Advanced Gate Stacks and Substrate Engineering  (Rick Garfunkel and Evgeni Gusev, Rutgers, 5.99 MB)

Radiation Effects in SiGe Technologies  (John Cressler, Gerogi Tech, 2.45 MB)

Device-Level Radiation-Effects Modeling  (Hugh Barnaby, Arizona State University, 2.41 MB)

Strained Si Technologies  (Scott Thompson, University of Florida, 3.46 MB)

Scaling Issues for Single-Event Effects  (Lloyd Massengill, Vanderbilt, 1.58 MB)

RADSAFE: An Integrated Radiation-Effects Simulation Framework  (Bob Weller and Robert Reed, Vanderbilt, 1.77 MB)