Institute for Space and Defense Electronics

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Michael L. Alles, PhD

Research Professor, EE
Associate Director, ISDE
Google Scholar Profile
Dr. Michael Alles received his Ph.D. (12/92), M.S. (8/90), and B.S. (5/87) degrees in Electrical Engineering from Vanderbilt University. Dr. Alles is a Research Professor of Electrical Engineering, and the Associate Director of the Vanderbilt Institute for Space and Defense Electronics (ISDE). Prior to returning to Vanderbilt to join ISDE, he spent 12 years in the semiconductor industry working in silicon-in-insulator (SOI) technology development, manufacturing, metrology, computer aided design tools for semiconductor fabrication processes, semiconductor device physics, and integrated circuit design. In addition to his technical expertise, Dr. Alles has business and program management experience including having participated in 2 public offerings. His current research focuses on the application of advanced and emerging semiconductor technologies in radiation environments, and modeling and simulation of radiation effects in semiconductor devices and circuits. Dr. Alles has served on the SIA ITRS starting materials working group including chairing the SOI materials group for the 2001 revision, the IEEE SOI/S3S conference technical committee, and has been a reviewer for Transactions on Nuclear Science and a short course instructor for NSREC (Radiation Hardening by Process) and IRPS (Radiation Effects on Advanced bulk, FinFET and SOI CMOS Technologies). He is a member of IEEE EDS and NPSS, and has over 220 publications and 2 patents.
Highlighted Publications:
D. M. Fleetwood, S. Beyne, R. Jiang, S. E. Zhao, P. Wang, S. Bonaldo, M. W. McCurdy, Zs. Tőkei, I. DeWolf, Kristof Croes, E. X. Zhang, M. L. Alles, R. D. Schrimpf, R. A. Reed, and D. Linten, Low-Frequency Noise and Defects in Copper and Ruthenium Resistors,” Applied Physics Letters, 114 (20), 203501. DOI: 10.1063/1.5093549
M. L. Breeding, R. A. Reed, K. M. Warren and M. L. Alles, “Exploration of the Impact of Physical Integration Schemes on Soft Errors in 3D ICs Using Monte Carlo Simulation,” 2019 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2019, pp. 1-7, April 2019. DOI: 10.1109/IRPS.2019.8720545
J. S. Kauppila, D. R. Ball, J. A. Maharrey, R. C. Harrington, T. D. Haeffner, A. L. Sternberg, M. L. Alles, and L. W. Massengill, “A Bias-Dependent Single-Event-Enabled Compact Model for Bulk FinFET Technologies,” IEEE Transactions on Nuclear Science, vol. 66, no. 3, pp. 635–642, Mar. 2019. DOI:10.1109/TNS.2019.2897329
Hailong Chen, Hao Jia, Wenjun Liao, Vida Pashaei, Charles N. Arutt, Michael W. McCurdy, Christian A. Zorman, Robert A. Reed, Ronald D. Schrimpf, Michael L. Alles and Philip X.-L. Feng, “Probing heavy ion radiation effects in silicon-carbide (SiC) via 3D integrated multimode 3 vibrating diaphragms,” Applied Physics Letters, 114 (10), March 2019. DOI: 10.1063/1.5063782
P. Nsengiyumva, L. W. Massengill, J. S. Kauppila, J. A. Maharrey, R. C. Harrington, T. D. Haeffner, D. R. Ball, M. L. Alles, B. L. Bhuva, W. T. Holman, E. X. Zhang, J. D. Rowe, and A. L. Sternberg, “Angular Effects on Single-Event Mechanisms in Bulk FinFET Technologies,” IEEE Transactions on Nuclear Science, vol. 65, no. 1, pp. 223-230, Jan. 2018. DOI: 10.1109/TNS.2006.884788

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