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Lloyd W. Massengill, PhD

	Professor

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Dr. Lloyd W. Massengill [PhD ‘87, NCSU] is Professor of Electrical and Computer Engineering at Vanderbilt University, and a founding member of the Vanderbilt Institute for Space and Defense Electronics. During his 30+ year career, Prof. Massengill has led the development of computer models, for DoD and commercial sponsors, that simulate the failure modes of integrated circuits in hostile environments, allowing designers to identify and correct potential risks prior to deployment; he discovered several fundamental failure mechanisms in modern integrated systems due to space or terrestrial radiation exposure; he directed the integration of failure models into industry-standard EDA design tools; he created fault-tolerant circuit designs; and he trained many young engineers in the fault-tolerant design of integrated circuits. He has over 300 publications in the area. Dr. Massengill is a Fellow of the IEEE.
Highlighted Publications:
V. Ferlet-Cavrois, L.W. Massengill, P. Gouker, “Single Event Transients in Digital CMOS – A Review,” IEEE Trans. Nuclear Science, vol. 60, no. 3, pp. 1767-1790, 2013. DOI: 10.1109/TNS.2013.2255624
L.W. Massengill and P.W. Tuinenga, “Single-Event Transient Pulse Propagation in Digital CMOS, IEEE Trans. on Nuclear Science, vol. 55, no. 6, December 2008. DOI: 10.1109/TNS.2008.2006749
L.W. Massengill, O.A. Amusan, S. Dasgupta, A.L. Sternberg, J.D. Black, A.F. Witulski, B.L. Bhuva, and M.L. Alles, “Soft-Error Charge-Sharing Mechanisms at Sub-100nm Technology Nodes,” IEEE Intl. Conf. on Integrated Circuit Design and Technology, 2007. DOI: 10.1109/ICICDT.2007.4299576
B. Olson, D. Ball, K.M. Warren, L.W. Massengill, N. Haddad, S. Doyle, D. McMorrow, “Simultaneous SE Charge Sharing and Parasitic Bipolar Conduction in a Highly Scaled SRAM Design”, IEEE Trans. On Nuclear Science, vol. NS-52, no. 6, December 2005. DOI: 10.1109/TNS.2005.860684
P.E. Dodd and L.W. Massengill, “Basic Mechanisms and Modeling of Single-Event Upset in Digital Microelectronics, IEEE Trans. on Nuclear Science, vol. NS-50, no. 3, June 2003. DOI: 10.1109/TNS.2003.813129

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