Background:

Kevin Warren is a Senior Electrical Engineer for the Institute for Space and Defense Electronics. His current focus is on modeling the soft error response of microelectronics for terrestrial and space applications. He is part of a team that uses detailed analysis at the circuit and device level in conjunction with physics based Monte-Carlo radiation transport tools to identify radiation sensitive designs, predict soft error rates, and develop optimization strategies for improving radiation hardness. Previous projects at ISDE include the design and development of radiation effects test structures and test plans for model development and technology characterization related to the Trident D5LE program.

He received his B.S. degree in chemistry with an emphasis in biochemistry from Tennessee Technological University in 1994. He completed his M.S. in Chemistry at Vanderbilt University in 1997 where he investigated the nonlinear optical properties of quantum dots in silica-xerogels fabricated by synthetic chemical methods. He received his M.S. in Electrical Engineering from Vanderbilt University in 1999 with an emphasis in radiation effects on electronic devices by investigating the role of transistor geometries on single event upset cross sections. Kevin is currently working towards his PhD in Electrical Engineering.

Previous employment was at Raytheon ITSS as a contractor at the Marshall Space Flight Center from 1998 to 2000 where he supported the component group as a radiation effects engineer for the International Space Station and the Space Shuttle Programs. He then worked at the Johns Hopkins University Applied Physics Laboratories as a specialist in the testing and qualification of electronic parts for multiple unmanned space exploration projects, including the CONTOUR and MESSENGER programs. His responsibilities included the development of custom test hardware and software for electrical and radiation testing of integrated circuits. In 2003, he joined the Institute for Space and Defense Electronics.

Publications:

Sierawski, R. A. Reed, M. E. Porter, M. H. Mendenhall, R. D. Schrimpf, L. W. Massengill, “Predicting Neutron Induced Soft Error Rates: Evaluation of Accelerated Ground Based Test Methods,” Proceedings of the 2008 International Reliability and Physics Symposium. April 2008.

K.M. Warren, B.D. Sierawski, R.A. Reed, R.A. Weller, C. Carmichael, A. Lesea, M.H. Mendenhall, P.E. Dodd, R.D. Schrimpf, L.W. Massengill, T. Hoang, H. Wan, JL Jong, R. Padovani, J. Fabula, "Monte-Carlo Based On- Orbit Single Event Upset Rate Prediction for a Radiation Hardened by Design Latch," IEEE Trans. Nucl. Sci., Vol 54, No. 6. December 2007. pp 2419-2425.

K.M. Warren, et al. “Modeling Alpha and Neutron Induced Soft Errors in Static Random Access Memories”, 2007 ICICDT Conference Presentation.

K.M. Warren, B.D. Sierawski, R.A. Weller, R.A. Reed, M.H. Mendenhall, J.A. Pellish, R.D. Schrimpf, L.W. Masengill, M.E. Porter, J.W. Wilkinson, "Predicting Thermal Neutron-Induced Soft Errors in Static Memories Using TCAD and Physics-Based Monte Carlo Simulation Tools," Elec. Dev. Letters, Vol. 28, issue 2, February 2007. pp 180-182.

K. M. Warren, R. A. Weller, B. Sierawski, R. A. Reed, M. H. Mendenhall, R. D. Schrimpf, L. W. Massengill, M. Porter, J. Wilkinson, K. A. LaBel, and J. Adams, "Application of RADSAFE to Model Single Event Upset Response of a 0.25 um CMOS SRAM," IEEE Trans. Nucl. Sci., Vol. 54, No. 4, August 2007, pp 898-903.

K.M. Warren, R.A. Weller, R.A., M.H. Mendenhall, R.A. Reed, D.R. Ball, C.L. Howe, B.D. Olson, M.L. Alles, L.W. Massengill, R.D. Schrimpf, N.F. Haddad, S.E. Doyle, D. McMorrow, J.S. Melinger, W.T. Lotshaw, “The Contribution of Nuclear Reactions to Heavy Ion Single Event Upset Cross-section Measurements in a High-density SEU Hardened SRAM,” IEEE Trans. Nuc. Sci. Vol 52, Dec. 2005 p2125 – 2131.

K. Warren, D. Roth, J. Kinnison, R. Pappalardo, “Single Event Burnout of NPN Bipolar Junction Transistors in Hybrid DC/DC Converters.” Trans. Nuc. Sci., Vol. 49, Dec 2002 p 3097.

K. Warren, D Roth, J. Kinnison. R. Pappalardo, “Single Event Testing of DC/DC Converters for Space Flight.” 2002 IEEE NSREC Data Workshop, p 106.

K. Warren, D. Roth, J. Kinnison, B. Carkuff, “Single Event Latchup and Total Dose Testing of Candidate Spacecraft Components.” 2001 IEEE NSREC Data Workshop, p 100.

K. Warren, L. Massengill, R. Schrimpf, H. Barnaby, “Analysis of the Influence of MOS Device Geometry on Predicted SEU Cross Sections.” Trans. Nucl. Sci, Vol 46, 1998, p 1363.

“Measurement of b and n 2 for Platinum/silica-xerogel Nanocomposites and Preparation of Gold Quantum Dots on Sodium Bicarbonate”, M.S. Chemistry, Vanderbilt University, 1997.

“The Influence of SOI-MOSFET Geometry on Predicted Single Event Cross Sections” M.S. Electrical Engineering, Vanderbilt University , 1999.

M. Porter, J. Wilkinson, K. Walsh, B. Sierawski, K. Warren, “Soft error reliability improvements for implantable medical devices, “ Proceedings of the 2008 International Reliability and Physics Symposium. April 2008.

M. Turowski, A. Fedoseyev, A. Raman, K. M. Warren, M. L. Alles, “Mixed- Mode Modeling of Radiation Effects with Nuclear Reactions in Nanoscale Electronics , “ 2008 GOMAC.

B. Hughlock, M. Baze, K. Warren, “RHBD Sequential Logic SEU Error Rates in Space Are Limited by Ions Incident at Grazing Angles,” 2008 GOMAC Conference.

P.E. Dodd, Schwank, J. R. Shaneyfelt, M. R., Felix, J. A., Paillet, P., Ferlet-Cavrois, V., Baggio, J., Reed, R. A., Warren, K. M., Weller, R. A., Schrimpf, R. D., Hash, G. L., Dalton, S. M., Hirose, K., Saito, H., “Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits,” IEEE Trans. Nucl. Sci., Vol. 54, No. 6, December 2007, pp. 2303-2311.

R.A. Reed, R.A. Weller, M.H. Mendenhall, J.-M Lauenstein, K.M. Warren, J.A. Pellish, R.D. Schrimpf, B.D. Sierawski, L.W. Massengill, P.E. Dodd, M.R. Shaneyfelt, J.A. Felix, J.R. Schwank, N.F. Haddad, R.K. Lawrence, J.H. Bowman, R. Conde, “Impact of Ion Energy and Species on Single Event Effects Analysis,” IEEE Trans. Nucl. Sci., Vol 54. No. 6, December 2007. pp. 2312-2321.

J. A. Pellish, Reed, R. A., Sutton, A. K., Weller, R. A., Carts, M. A., Marshall, P. W., Marshall, C. J., Krithivasan, R., Cressler, J. D., Mendenhall, M. H., Schrimpf, R. D., Warren, K. M., Sierawski, B. D., Niu, G. F., “A Generalized SiGe HBT Single-Event Effects Model for On-Orbit Event Rate Calculations,” IEEE Trans. Nucl. Sci.,Vol. 54, No. 6. December 2007. pp. 2322-2329.

R.A. Reed, R.A. Weller, R. D. Schrimpf, M.H. Mendenhall, K.M. Warren, and L.W. Massengill, “Implications of Nuclear Reactions for Single Event Effects Test Methods and Analysis,” IEEE Trans. Nuc. Sci., Vol 53, Dec. 2006. pp. 3356-3362.

Olson, B.D., Amusan, O.A., Dasgupta, S., Massengill, L.W., Witulski, A.F., Bhuva, B.L., Alles, M.L., Warren, K.M., Ball, D.R, “Analysis of Parasitic PNP Bipolar Transistor Mitigation Using Well Contacts in 130 nm and 90 nm CMOS Technology,” IEEE Trans. Nucl. Sci., Vol. 54, No. 4. August 2007, pp. 894-897.

D.R. Ball, K.M. Warren, R.A. Weller, R.A. Reed, A. Kobayashi, J.A. Pellish, M.H. Mendenhall, C.L. Howe, L.W. Massengill, R.D. Schrimpf, N.F. Haddad, “Simulating Nuclear Events in a TCAD Model of a High- Density SEU Hardened SRAM Technology,” IEEE Trans. Nuc. Sci., Vol. 53, Aug. 2006.pp. 1794 – 1798.

N F. Haddad, T. Bach, T. Conway, D. Lawson, J. Ross, J. Rodgers, A. Tipton, D Ball, K Warren and R. Schrimpf, "Eliminating Low LET Sensitivities in Deep Sub-Micrometer SRAM through Non-intrusive Technology Features, "Accepted for publication Trans. Nuc. Sci. 2007.

C.L. Howe, R.A. Weller, R.A. Reed, M.H. Mendenhall, R.D. Schrimpf, K.M. Warren, D.R. Ball, L.W. Massengill, K.A. LaBel, J.W. Howard, N.F. Haddad, “Role of Heavy-ion Nuclear Reactions in Determining On-orbit Single Event Error Rates,” IEEE Trans. Nuc. Sci. Vol. 52, Dec. 2005. pp. 2182 – 2188.

B.D. Olson, D.R. Ball, K.M. Warren, L.W. Massengill, N.F. Haddad, S.E. Doyle, D. McMorrow, “Simultaneous Single Event Charge Sharing and Parasitic Bipolar Conduction in a Highly-Scaled SRAM Design”, IEEE Trans. Nuc. Sci. Vol. 52, Dec. 2005. pp. 2132 – 2136.

A. S. Kobayashi, D. R. Ball, K. M. Warren, R. A. Reed, M. H. Mendenhall, R. D. Schrimpf, , and R. A. Weller, “The effect of metallization layers on single event susceptibility,” IEEE Trans. Nucl. Sci., 52(6), December 2005. pp. 2189-2193

D. McMorrow, W.T. Lotshaw, J.S. Melinger, S. Buchner, J.D. Davis, R.K. Lawrence, D. Haddad, J.H. Bowman, R.D. Brown, D. Carlton, J Pena, J. Vasquez, K.M. Warren, and L.W. Massengill, “Single-Event Upset in Flip- Chip SRAM induced by Through-Wafer, Two-Photon Absorption.” IEEE Trans. Nuc. Sci, Vol. 52, No. 6, December 2007. pp. 2421-2425.