J. H. Adams, A. F. Barghouty, M. H. Mendenhall, R. A. Reed, B. D. Sierawski, K. M. Warren, J. W. Watts, and R. A. Weller, “CREME: The 2011 Revision of the Cosmic Ray Effects on Micro-Electronics Code,” Ieee Transactions on Nuclear Science, vol. 59, pp. 3141-3147, Dec 2012.

S. E. Armstrong, R. W. Blaine, W. T. Holman, and L. W. Massengill, “Single-Event Analysis and Hardening of Mixed-Signal Circuit Interfaces in High-Speed Communications Devices,” Ieee Transactions on Nuclear Science, vol. 59, pp. 1027-1033, Aug 2012.

E. C. Auden, R. A. Weller, M. H. Mendenhall, R. A. Reed, R. D. Schrimpf, N. C. Hooten, and M. P. King, “Single Particle Displacement Damage in Silicon,” Ieee Transactions on Nuclear Science, vol. 59, pp. 3054-3061, Dec 2012.

W. G. Bennett, R. D. Schrimpf, N. C. Hooten, R. A. Reed, J. S. Kauppila, R. A. Weller, K. M. Warren, and M. H. Mendenhall, “Efficient Method for Estimating the Characteristics of Radiation-Induced Current Transients,” Ieee Transactions on Nuclear Science, vol. 59, pp. 2704-2709, Dec 2012.

S. Bhandaru, E. X. Zhang, D. M. Fleetwood, R. A. Reed, R. A. Weller, R. R. Harl, B. R. Rogers, and S. M. Weiss, “Accelerated Oxidation of Silicon Due to X-ray Irradiation,” Ieee Transactions on Nuclear Science, vol. 59, pp. 781-785, Aug 2012.

R. W. Blaine, N. M. Atkinson, J. S. Kauppila, S. E. Armstrong, N. C. Hooten, T. D. Loveless, J. H. Warner, W. T. Holman, and L. W. Massengill, “Differential Charge Cancellation (DCC) Layout as an RHBD Technique for Bulk CMOS Differential Circuit Design,” Ieee Transactions on Nuclear Science, vol. 59, pp. 2867-2871, Dec 2012.

R. W. Blaine, N. M. Atkinson, J. S. Kauppila, T. D. Loveless, S. E. Armstrong, W. T. Holman, and L. W. Massengill, “Single-Event-Hardened CMOS Operational Amplifier Design,” Ieee Transactions on Nuclear Science, vol. 59, pp. 803-810, Aug 2012.

I. Chatterjee, B. L. Bhuva, S. J. Wen, and R. Wong, “Influence of User-Controlled Parameters in Alpha Particle-Induced Single-Event Error Rates in Commercial SRAM Cells,” Ieee Transactions on Nuclear Science, vol. 59, pp. 872-879, Aug 2012.

N. A. Dodds, N. C. Hooten, R. A. Reed, R. D. Schrimpf, J. H. Warner, N. J. H. Roche, D. McMorrow, S. J. Wen, R. Wong, J. F. Salzman, S. Jordan, J. A. Pellish, C. J. Marshall, N. J. Gaspard, W. G. Bennett, E. X. Zhang, and B. L. Bhuva, “Effectiveness of SEL Hardening Strategies and the Latchup Domino Effect,” Ieee Transactions on Nuclear Science, vol. 59, pp. 2642-2650, Dec 2012.

F. El-Mamouni, E. X. Zhang, D. R. Ball, B. Sierawski, M. P. King, R. D. Schrimpf, R. A. Reed, M. L. Alles, D. M. Fleetwood, D. Linten, E. Simoen, and G. Vizkelethy, “Heavy-Ion-Induced Current Transients in Bulk and SOI FinFETs,” Ieee Transactions on Nuclear Science, vol. 59, pp. 2674-2681, Dec 2012.

S. A. Francis, C. X. Zhang, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, K. F. Galloway, E. Simoen, J. Mitard, and C. Claeys, “Comparison of Charge Pumping and 1/f Noise in Irradiated Ge pMOSFETs,” Ieee Transactions on Nuclear Science, vol. 59, pp. 735-741, Aug 2012.

N. C. Hooten, L. D. Edmonds, W. G. Bennett, J. R. Ahlbin, N. A. Dodds, R. A. Reed, R. D. Schrimpf, and R. A. Weller, “The Significance of High-Level Carrier Generation Conditions for Charge Collection in Irradiated Devices,” Ieee Transactions on Nuclear Science, vol. 59, pp. 2710-2721, Dec 2012.

D. R. Hughart, R. D. Schrimpf, D. M. Fleetwood, N. L. Rowsey, M. E. Law, B. R. Tuttle, and S. T. Pantelides, “The Effects of Proton-Defect Interactions on Radiation-Induced Interface-Trap Formation and Annealing,” Ieee Transactions on Nuclear Science, vol. 59, pp. 3087-3092, Dec 2012.

H. Hughes, K. Bussmann, P. J. McMarr, S. F. Cheng, R. Shull, A. P. Chen, S. Schafer, T. Mewes, A. Ong, E. Chen, M. H. Mendenhall, and R. A. Reed, “Radiation Studies of Spin-Transfer Torque Materials and Devices,” Ieee Transactions on Nuclear Science, vol. 59, pp. 3027-3033, Dec 2012.

S. Jagannathan, T. D. Loveless, B. L. Bhuva, N. J. Gaspard, N. Mahatme, T. Assis, S. J. Wen, R. Wong, and L. W. Massengill, “Frequency Dependence of Alpha-Particle Induced Soft Error Rates of Flip-Flops in 40-nm CMOS Technology,” Ieee Transactions on Nuclear Science, vol. 59, pp. 2796-2802, Dec 2012.

A. V. Kauppila, D. R. Ball, B. L. Bhuva, L. W. Massengill, and W. T. Holman, “Impact of Process Variations on Upset Reversal in a 65 nm Flip-Flop,” Ieee Transactions on Nuclear Science, vol. 59, pp. 886-892, Aug 2012.

A. V. Kauppila, B. L. Bhuva, T. D. Loveless, S. Jagannathan, N. J. Gaspard, J. S. Kauppila, L. W. Massengill, S. J. Wen, R. Wong, G. L. Vaughn, and W. T. Holman, “Effect of Negative Bias Temperature Instability on the Single Event Upset Response of 40 nm Flip-Flops,” Ieee Transactions on Nuclear Science, vol. 59, pp. 2651-2657, Dec 2012.

M. P. King, R. A. Reed, R. A. Weller, M. H. Mendenhall, R. D. Schrimpf, N. D. Pate, E. A. Auden, and S. L. Weeden-Wright, “Radial characteristics of heavy-ion track structure and implications of delta-ray events for microelectronics,” Applied Physics Letters, vol. 101, Jul 30 2012.

T. D. Loveless, J. S. Kauppila, S. Jagannathan, D. R. Ball, J. D. Rowe, N. J. Gaspard, N. M. Atkinson, R. W. Blaine, T. R. Reece, J. R. Ahlbin, T. D. Haeffner, M. L. Alles, W. T. Holman, B. L. Bhuva, and L. W. Massengill, “On-Chip Measurement of Single-Event Transients in a 45 nm Silicon-on-Insulator Technology,” Ieee Transactions on Nuclear Science, vol. 59, pp. 2748-2755, Dec 2012.

N. N. Mahatme, B. L. Bhuva, Y. P. Fang, and A. S. Oates, “Impact of Strained-Si PMOS Transistors on SRAM Soft Error Rates,” Ieee Transactions on Nuclear Science, vol. 59, pp. 845-850, Aug 2012.

N. N. Mahatme, E. X. Zhang, R. A. Reed, B. L. Bhuva, R. D. Schrimpf, D. M. Fleetwood, D. Linten, E. Simoen, A. Griffoni, M. Aoulaiche, M. Jurczak, and G. Groeseneken, “Impact of Back-Gate Bias and Device Geometry on the Total Ionizing Dose Response of 1-Transistor Floating Body RAMs,” Ieee Transactions on Nuclear Science, vol. 59, pp. 2966-2973, Dec 2012.

M. H. Mendenhall and R. A. Weller, “A probability-conserving cross-section biasing mechanism for variance reduction in Monte Carlo particle transport calculations,” Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment, vol. 667, pp. 38-43, Mar 1 2012.

B. Narasimham, K. Chandrasekharan, Z. K. Liu, J. K. Wang, G. Djaja, N. J. Gaspard, J. S. Kauppila, and B. L. Bhuva, “A Hysteresis-Based D-Flip-Flop Design in 28 nm CMOS for Improved SER Hardness at Low Performance Overhead,” Ieee Transactions on Nuclear Science, vol. 59, pp. 2847-2851, Dec 2012.

S. T. Pantelides, Y. Puzyrev, X. Shen, T. Roy, S. DasGupta, B. R. Tuttle, D. M. Fleetwood, and R. D. Schrimpf, “Reliability of III-V devices – The defects that cause the trouble,” Microelectronic Engineering, vol. 90, pp. 3-8, Feb 2012.

Y. S. Puzyrev, B. Wang, E. X. Zhang, C. X. Zhang, A. K. M. Newaz, K. I. Bolotin, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “Surface Reactions and Defect Formation in Irradiated Graphene Devices,” Ieee Transactions on Nuclear Science, vol. 59, pp. 3039-3044, Dec 2012.

V. Ramachandran, R. A. Reed, R. D. Schrimpf, D. McMorrow, J. B. Boos, M. P. King, E. X. Zhang, G. Vizkelethy, X. Shen, and S. T. Pantelides, “Single-Event Transient Sensitivity of InAlSb/InAs/AlGaSb High Electron Mobility Transistors,” Ieee Transactions on Nuclear Science, vol. 59, pp. 2691-2696, Dec 2012.

Y. Ren, L. Fan, L. Chen, S. J. Wen, R. Wong, N. W. van Vonno, A. F. Witulski, and B. L. Bhuva, “Single-Event Effects Analysis of a Pulse Width Modulator IC in a DC/DC Converter,” Journal of Electronic Testing-Theory and Applications, vol. 28, pp. 877-883, Dec 2012.

D. Rennie, D. Li, M. Sachdev, B. L. Bhuva, S. Jagannathan, S. J. Wen, and R. Wong, “Performance, Metastability, and Soft-Error Robustness Trade-offs for Flip-Flops in 40 nm CMOS,” Ieee Transactions on Circuits and Systems I-Regular Papers, vol. 59, pp. 1626-1634, Aug 2012.

N. Rezzak, P. Maillard, R. D. Schrimpf, M. L. Alles, D. M. Fleetwood, and Y. A. Li, “The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies,” Microelectronics Reliability, vol. 52, pp. 2521-2526, Nov 2012.

N. L. Rowsey, M. E. Law, R. D. Schrimpf, D. M. Fleetwood, B. R. Tuttle, and S. T. Pantelides, “Mechanisms Separating Time-Dependent and True Dose-Rate Effects in Irradiated Bipolar Oxides,” Ieee Transactions on Nuclear Science, vol. 59, pp. 3069-3076, Dec 2012.

N. L. Rowsey, M. E. Law, R. D. Schrimpf, D. M. Fleetwood, B. R. Tuttle, and S. T. Pantelides, “Radiation-Induced Oxide Charge in Low- and High-H-2 Environments,” Ieee Transactions on Nuclear Science, vol. 59, pp. 755-759, Aug 2012.

J. R. Schwank, M. R. Shaneyfelt, V. Ferlet-Cavrois, P. E. Dodd, E. W. Blackmore, J. A. Pellish, K. P. Rodbell, D. F. Heidel, P. W. Marshall, K. A. LaBel, P. M. Gouker, N. Tam, R. Wong, S. J. Wen, R. A. Reed, S. M. Dalton, and S. E. Swanson, “Hardness Assurance Testing for Proton Direct Ionization Effects,” Ieee Transactions on Nuclear Science, vol. 59, pp. 1197-1202, Aug 2012.

M. Turowski, A. Raman, M. L. Alles, D. Ball, M. P. King, R. A. Reed, and R. D. Schrimpf, “Effect of Carrier Transport in Oxides Surrounding Active Devices on SEU in 45 nm SOI SRAM,” Ieee Transactions on Nuclear Science, vol. 59, pp. 728-734, Aug 2012.

J. Yao, Z. C. Ye, M. Li, Y. F. Li, R. D. Schrimpf, D. M. Fleetwood, and Y. Wang, “Statistical Analysis of Soft Error Rate in Digital Logic Design Including Process Variations,” Ieee Transactions on Nuclear Science, vol. 59, pp. 2811-2817, Dec 2012.

C. X. Zhang, E. X. Zhang, D. M. Fleetwood, M. L. Alles, R. D. Schrimpf, E. B. Song, S. M. Kim, K. Galatsis, and K. L. W. Wang, “Electrical Stress and Total Ionizing Dose Effects on Graphene-Based Non-Volatile Memory Devices,” Ieee Transactions on Nuclear Science, vol. 59, pp. 2974-2978, Dec 2012.

E. X. Zhang, D. M. Fleetwood, G. X. Duan, C. X. Zhang, S. A. Francis, and R. D. Schrimpf, “Charge Pumping Measurements of Radiation-Induced Interface-Trap Density in Floating-Body SOI FinFETs,” Ieee Transactions on Nuclear Science, vol. 59, pp. 3062-3068, Dec 2012.

E. X. Zhang, D. M. Fleetwood, S. A. Francis, C. X. Zhang, F. El-Mamouni, and R. D. Schrimpf, “Charge pumping and DCIV currents in SOI FinFETs,” Solid-State Electronics, vol. 78, pp. 75-79, Dec 2012.

E. X. Zhang, A. K. M. Newaz, B. Wang, C. X. Zhang, D. M. Fleetwood, K. I. Bolotin, R. D. Schrimpf, S. T. Pantelides, and M. L. Alles, “Ozone-exposure and annealing effects on graphene-on-SiO2 transistors,” Applied Physics Letters, vol. 101, Sep 17 2012.

E. X. Zhang, C. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. Dhar, S. H. Ryu, X. Shen, and S. T. Pantelides, “Bias-Temperature Instabilities in 4H-SiC Metal-Oxide-Semiconductor Capacitors,” Ieee Transactions on Device and Materials Reliability, vol. 12, pp. 391-398, Jun 2012.

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