[1]      J. R. Ahlbin, M. J. Gadlage, N. M. Atkinson, B. Narasimham, B. L. Bhuva, A. F. Witulski, W. T. Holman, P. H. Eaton, and L. W. Massengill, “Effect of Multiple-Transistor Charge Collection on Single-Event Transient Pulse Widths,” Ieee Transactions on Device and Materials Reliability, vol. 11, pp. 401-406, Sep 2011.

[2]   R. Arinero, E. X. Zhang, N. Rezzak, R. D. Schrimpf, D. M. Fleetwood, B. K. Choi, A. B. Hmelo, J. Mekki, A. D. Touboul, and F. Saigne, “High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors,” Microelectronics Reliability, vol. 51, pp. 2093-2096, Dec 2011.

[3]   S. E. Armstrong, T. D. Loveless, J. R. Hicks, W. T. Holman, D. McMorrow, and L. W. Massengill, “Phase-Dependent Single-Event Sensitivity Analysis of High-Speed A/MS Circuits Extracted from Asynchronous Measurements,” Ieee Transactions on Nuclear Science, vol. 58, pp. 1066-1071, Jun 2011.

[4]   L. Artola, G. Hubert, K. M. Warren, M. Gaillardin, R. D. Schrimpf, R. A. Reed, R. A. Weller, J. R. Ahlbin, P. Paillet, M. Raine, S. Girard, S. Duzellier, L. W. Massengill, and F. Bezerra, “SEU Prediction From SET Modeling Using Multi-Node Collection in Bulk Transistors and SRAMs Down to the 65 nm Technology Node,” Ieee Transactions on Nuclear Science, vol. 58, pp. 1338-1346, Jun 2011.

[5]   N. M. Atkinson, A. F. Witulski, W. T. Holman, J. R. Ahlbin, B. L. Bhuva, and L. W. Massengill, “Layout Technique for Single-Event Transient Mitigation via Pulse Quenching,” Ieee Transactions on Nuclear Science, vol. 58, pp. 885-890, Jun 2011.

[6]   E. C. Auden, R. A. Weller, M. H. Mendenhall, R. A. Reed, R. D. Schrimpf, M. P. King, N. A. Dodds, L. A. Arpin, and M. Asai, “High Energy Electron-Induced Transients In a Shielded Focal Plane Array,” Ieee Transactions on Nuclear Science, vol. 58, pp. 899-905, Jun 2011.

[7]   S. DasGupta, X. Shen, R. D. Schrimpf, R. A. Reed, S. T. Pantelides, D. M. Fleetwood, J. I. Bergman, and B. Brar, “Degradation in InAs-AlSb HEMTs Under Hot-Carrier Stress,” Ieee Transactions on Electron Devices, vol. 58, pp. 1499-1507, May 2011.

[8]   I. S. Esqueda, H. J. Barnaby, K. E. Holbert, F. El-Mamouni, and R. D. Schrimpf, “Modeling of Ionizing Radiation-Induced Degradation in Multiple Gate Field Effect Transistors,” Ieee Transactions on Nuclear Science, vol. 58, pp. 499-505, Apr 2011.

[9]   M. J. Gadlage, J. R. Ahlbin, B. L. Bhuva, N. C. Hooten, N. A. Dodds, R. A. Reed, L. W. Massengill, R. D. Schrimpf, and G. Vizkelethy, “Alpha-Particle and Focused-Ion-Beam-Induced Single-Event Transient Measurements in a Bulk 65-nm CMOS Technology,” Ieee Transactions on Nuclear Science, vol. 58, pp. 1093-1097, Jun 2011.

[10]  M. J. Gadlage, J. R. Ahlbin, B. Narasimham, B. L. Bhuva, L. W. Massengill, and R. D. Schrimpf, “Single-Event Transient Measurements in nMOS and pMOS Transistors in a 65-nm Bulk CMOS Technology at Elevated Temperatures,” Ieee Transactions on Device and Materials Reliability, vol. 11, pp. 179-186, Mar 2011.

[11]  M. Gedion, F. Wrobel, F. Saigne, and R. D. Schrimpf, “Uranium and Thorium Contribution to Soft Error Rate in Advanced Technologies,” Ieee Transactions on Nuclear Science, vol. 58, pp. 1098-1103, Jun 2011.

[12]  Y. Gonzalez-Velo, J. Boch, F. Pichot, J. Mekki, N. J. H. Roche, S. Perez, C. Deneau, J. R. Vaille, L. Dusseau, F. Saigne, E. Lorfevre, and R. D. Schrimpf, “The Use of Electron-Beam Lithography for Localized Micro-Beam Irradiations,” Ieee Transactions on Nuclear Science, vol. 58, pp. 1104-1111, Jun 2011.

[13]  N. F. Haddad, A. T. Kelly, R. K. Lawrence, B. Li, J. C. Rodgers, J. F. Ross, K. M. Warren, R. A. Weller, M. H. Mendenhall, and R. A. Reed, “Incremental Enhancement of SEU Hardened 90 nm CMOS Memory Cell,” Ieee Transactions on Nuclear Science, vol. 58, pp. 975-980, Jun 2011.

[14]  A. V. Kauppila, B. L. Bhuva, J. S. Kauppila, L. W. Massengill, and W. T. Holman, “Impact of Process Variations on SRAM Single Event Upsets,” Ieee Transactions on Nuclear Science, vol. 58, pp. 834-839, Jun 2011.

[15]  T. D. Loveless, S. Jagannathan, T. Reece, J. Chetia, B. L. Bhuva, M. W. McCurdy, L. W. Massengill, S. J. Wen, R. Wong, and D. Rennie, “Neutron- and Proton-Induced Single Event Upsets for D- and DICE-Flip/Flop Designs at a 40 nm Technology Node,” Ieee Transactions on Nuclear Science, vol. 58, pp. 1008-1014, Jun 2011.

[16]  R. H. Magruder, R. A. Weeks, and R. A. Weller, “New intrinsic oxygen related defect bands in oxygen implanted silica,” Journal of Non-Crystalline Solids, vol. 357, pp. 1615-1620, Apr 1 2011.

[17] S. J. McMahon, W. B. Hyland, E. Brun, K. T. Butterworth, J. A. Coulter, T. Douki, D. G. Hirst, S. Jain, A. P. Kavanagh, Z. Krpetic, M. H. Mendenhall, M. F. Muir, K. M. Prise, H. Requardt, L. Sanche, G. Schettino, F. J. Currell, and C. Sicard-Roselli, “Energy Dependence of Gold Nanoparticle Radiosensitization in Plasmid DNA,” Journal of Physical Chemistry C, vol. 115, pp. 20160-20167, Oct 20 2011.

[18]  Y. S. Puzyrev, T. Roy, M. Beck, B. R. Tuttle, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, “Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors,” Journal of Applied Physics, vol. 109, Feb 1 2011.

[19]  N. Rezzak, M. L. Alles, R. D. Schrimpf, S. Kalemeris, L. W. Massengill, J. Sochacki, and H. J. Barnaby, “The sensitivity of radiation-induced leakage to STI topology and sidewall doping,” Microelectronics Reliability, vol. 51, pp. 889-894, May 2011.

[20]  T. Roy, Y. S. Puzyrev, E. X. Zhang, S. DasGupta, S. A. Francis, D. M. Fleetwood, R. D. Schrimpf, U. K. Mishra, J. S. Speck, and S. T. Pantelides, “1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH(3)-rich conditions,” Microelectronics Reliability, vol. 51, pp. 212-216, Feb 2011.

[21]  T. Roy, E. X. Zhang, Y. S. Puzyrev, X. Shen, D. M. Fleetwood, R. D. Schrimpf, G. Koblmueller, R. Chu, C. Poblenz, N. Fichtenbaum, C. S. Suh, U. K. Mishra, J. S. Speck, and S. T. Pantelides, “Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors,” Applied Physics Letters, vol. 99, Nov 14 2011.

[22]  M. S. Sabra, M. A. Clemens, R. A. Weller, M. N. Mendenhall, A. F. Barghouty, and F. B. Malik, “Validation of nuclear reaction models of 180 MeV proton-induced fragmentation of (27)Al,” Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, vol. 269, pp. 2463-2468, Nov 1 2011.

[23]  R. D. Schrimpf, D. M. Fleetwood, M. L. Alles, R. A. Reed, G. Lucovsky, and S. T. Pantelides, “Radiation effects in new materials for nano-devices (invited),” Microelectronic Engineering, vol. 88, pp. 1259-1264, Jul 2011.

[24]  X. A. Shen, E. X. Zhang, C. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. Dhar, S. H. Ryu, and S. T. Pantelides, “Atomic-scale origins of bias-temperature instabilities in SiC-SiO(2) structures,” Applied Physics Letters, vol. 98, Feb 7 2011.

[25]  K. Subramanian, W. P. Kang, J. L. Davidson, N. Ghosh, and K. F. Galloway, “A review of recent results on diamond vacuum lateral field emission device operation in radiation environments,” Microelectronic Engineering, vol. 88, pp. 2924-2929, Sep 2011.

[26]  K. H. Warnick, Y. Puzyrev, T. Roy, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “Room-temperature diffusive phenomena in semiconductors: The case of AlGaN,” Physical Review B, vol. 84, Dec 20 2011.

[27]  L. Watkins, W. H. Robinson, and R. A. Beyah, “A Passive Solution to the CPU Resource Discovery Problem in Cluster Grid Networks,” Ieee Transactions on Parallel and Distributed Systems, vol. 22, pp. 2000-2007, Dec 2011.

[28]  C. X. Zhang, S. A. Francis, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, K. F. Galloway, E. Simoen, J. Mitard, and C. Claeys, “Effect of Ionizing Radiation on Defects and 1/f Noise in Ge pMOSFETs,” Ieee Transactions on Nuclear Science, vol. 58, pp. 764-769, Jun 2011.

 

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