[1]      P. C. Adell, A. F. Witulski, R. D. Schrimpf, F. Baronti, W. T. Holman, and K. F. Galloway, “Digital Control for Radiation-Hardened Switching Converters in Space,” Ieee Transactions on Aerospace and Electronic Systems, vol. 46, pp. 761-770, Apr 2010.

[2]   J. R. Ahlbin, M. J. Gadlage, D. R. Ball, A. W. Witulski, B. L. Bhuva, R. A. Reed, G. Vizkelethy, and L. W. Massengill, “The Effect of Layout Topology on Single-Event Transient Pulse Quenching in a 65 nm Bulk CMOS Process,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3380-3385, Dec 2010.

[3]   S. E. Armstrong, B. D. Olson, W. T. Holman, J. Warner, D. McMorrow, and L. W. Massengill, “Demonstration of a Differential Layout Solution for Improved ASET Tolerance in CMOS A/MS Circuits,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3615-3619, Dec 2010.

[4]  R. Arora, E. Simoen, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, K. F. Galloway, B. K. Choi, J. Mitard, M. Meuris, C. Claeys, A. Madan, and J. D. Cressler, “Effects of Halo Doping and Si Capping Layer Thickness on Total-Dose Effects in Ge p-MOSFETs,” Ieee Transactions on Nuclear Science, vol. 57, pp. 1933-1939, Aug 2010.

[5]   M. A. Clemens, N. C. Hooten, V. Ramachandran, N. A. Dodds, R. A. Weller, M. H. Mendenhall, R. A. Reed, P. E. Dodd, M. R. Shaneyfelt, J. R. Schwank, and E. W. Blackmore, “The Effect of High-Z Materials on Proton-Induced Charge Collection,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3212-3218, Dec 2010.

[6]   D. J. Cummings, A. F. Witulski, H. Park, R. D. Schrimpf, S. E. Thompson, and M. E. Law, “Mobility Modeling Considerations for Radiation Effects Simulations in Silicon,” Ieee Transactions on Nuclear Science, vol. 57, pp. 2318-2326, Aug 2010.

[7]   A. Dasgupta, D. M. Fleetwood, R. A. Reed, R. A. Weller, M. H. Mendenhall, and B. D. Sierawski, “Dose Enhancement and Reduction in SiO(2) and High-kappa MOS Insulators,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3463-3469, Dec 2010.

[8]   S. DasGupta, D. McMorrow, R. A. Reed, R. D. Schrimpf, and J. B. Boos, “Gate Bias Dependence of Single Event Charge Collection in AlSb/InAs HEMTs,” Ieee Transactions on Nuclear Science, vol. 57, pp. 1856-1860, Aug 2010.

[9]   S. DasGupta, D. McMorrow, R. A. Reed, R. D. Schrimpf, J. B. Boos, and V. Ramachandran, “Process and Contamination Effects on the Single-Event Response of AlSb/InAs HEMTs,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3262-3266, Dec 2010.

[10]  N. A. Dodds, J. M. Hutson, J. A. Pellish, R. A. Reed, H. S. Kim, M. D. Berg, M. R. Friendlich, A. M. Phan, C. M. Seidleck, M. A. Xapsos, X. Deng, R. C. Baumann, R. D. Schrimpf, M. P. King, L. W. Massengill, and R. A. Weller, “Selection of Well Contact Densities for Latchup-Immune Minimal-Area ICs,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3575-3581, Dec 2010.

[11]  F. El-Mamouni, M. Bawedin, E. X. Zhang, R. D. Schrimpf, D. M. Fleetwood, and S. Cristoloveanu, “Total Dose Effects on the Performance of Irradiated Capacitorless MSDRAM Cells,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3054-3059, Dec 2010.

[12]  S. A. Francis, A. Dasgupta, and D. M. Fleetwood, “Effects of Total Dose Irradiation on the Gate-Voltage Dependence of the 1/f Noise of nMOS and pMOS Transistors,” Ieee Transactions on Electron Devices, vol. 57, pp. 503-510, Feb 2010.

[13]  M. J. Gadlage, J. R. Ahlbin, B. Narasimham, B. L. Bhuva, L. W. Massengill, R. A. Reed, R. D. Schrimpf, and G. Vizkelethy, “Scaling Trends in SET Pulse Widths in Sub-100 nm Bulk CMOS Processes,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3336-3341, Dec 2010.

[14] M. J. Gadlage, J. R. Ahlbin, B. Narasimham, V. Ramachandran, C. A. Dinkins, N. D. Pate, B. L. Bhuva, R. D. Schrimpf, L. W. Massengill, R. L. Shuler, and D. McMorrow, “Increased Single-Event Transient Pulsewidths in a 90-nm Bulk CMOS Technology Operating at Elevated Temperatures,” Ieee Transactions on Device and Materials Reliability, vol. 10, pp. 157-163, Mar 2010.

[15]  M. Gedion, F. Wrobel, F. Saigne, R. D. Schrimpf, and J. Mekki, “Monte Carlo Simulations to Evaluate the Contribution of Si Bulk, Interconnects, and Packaging to Alpha-Soft Error Rates in Advanced Technologies,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3121-3126, Dec 2010.

[16]  S. Jagannathan, M. J. Gadlage, B. L. Bhuva, R. D. Schrimpf, B. Narasimham, J. Chetia, J. R. Ahlbin, and L. W. Massengill, “Independent Measurement of SET Pulse Widths From N-Hits and P-Hits in 65-nm CMOS,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3386-3391, Dec 2010.

[17]  S. Jagannathan, D. R. Herbison, W. T. Holman, and L. W. Massengill, “Behavioral Modeling Technique for TID Degradation of Complex Analog Circuits,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3708-3715, Dec 2010.

[18]  P. Jannaty, F. C. Sabou, M. Gadlage, R. I. Bahar, J. Mundy, W. Patterson, R. A. Reed, R. A. Weller, R. D. Schrimpf, and A. Zaslavsky, “Two-Dimensional Markov Chain Analysis of Radiation-Induced Soft Errors in Subthreshold Nanoscale CMOS Devices,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3768-3774, Dec 2010.

[19]  M. P. King, D. Gong, C. Liu, T. Liu, A. C. Xiang, J. Ye, R. D. Schrimpf, R. A. Reed, M. L. Alles, and D. M. Fleetwood, “Response of a 0.25 mu m thin-film silicon-on-sapphire CMOS technology to total ionizing dose,” Journal of Instrumentation, vol. 5, Nov 2010.

[20]  M. P. King, R. A. Reed, R. A. Weller, M. H. Mendenhall, R. D. Schrimpf, M. L. Alles, E. C. Auden, S. E. Armstrong, and M. Asai, “The Impact of Delta-Rays on Single-Event Upsets in Highly Scaled SOI SRAMs,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3169-3175, Dec 2010.

[21]  A. P. Lauf, R. A. Peters, and W. H. Robinson, “A distributed intrusion detection system for resource-constrained devices in ad-hoc networks,” Ad Hoc Networks, vol. 8, pp. 253-266, May 2010.

[22]  Y. F. Li, N. Rezzak, E. X. Zhang, R. D. Schrimpf, D. M. Fleetwood, J. Q. Wang, D. L. Wang, Y. J. Wu, and S. A. Cai, “Including the Effects of Process-Related Variability on Radiation Response in Advanced Foundry Process Design Kits,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3570-3574, Dec 2010.

[23]  T. D. Loveless, M. L. Alles, D. R. Ball, K. M. Warren, and L. W. Massengill, “Parametric Variability Affecting 45 nm SOI SRAM Single Event Upset Cross-Sections,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3228-3233, Dec 2010.

[24]  T. D. Loveless, L. W. Massengill, W. T. Holman, B. L. Bhuva, D. McMorrow, and J. H. Warner, “A Generalized Linear Model for Single Event Transient Propagation in Phase-Locked Loops,” Ieee Transactions on Nuclear Science, vol. 57, pp. 2933-2947, Oct 2010.

[25]  P. Maillard, W. T. Holman, T. D. Loveless, B. L. Bhuva, and L. W. Massengill, “An RHBD Technique to Mitigate Missing Pulses in Delay Locked Loops,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3634-3639, Dec 2010.

[26]  C. J. Marshall, P. W. Marshall, R. L. Ladbury, A. Waczynski, R. Arora, R. D. Foltz, J. D. Cressler, D. M. Kahle, D. K. Chen, G. S. Delo, N. A. Dodds, J. A. Pellish, E. Kan, N. Boehm, R. A. Reed, and K. A. LaBel, “Mechanisms and Temperature Dependence of Single Event Latchup Observed in a CMOS Readout Integrated Circuit From 16-300 K,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3078-3086, Dec 2010.

[27]  B. Narasimham, J. K. Wang, M. Buer, R. Gorti, K. Chandrasekharan, K. M. Warren, B. D. Sierawski, R. D. Schrimpf, R. A. Reed, and R. A. Weller, “Contribution of Control Logic Upsets and Multi-Node Charge Collection to Flip-Flop SEU Cross-Section in 40-nm CMOS,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3176-3182, Dec 2010.

[28]  S. T. Pantelides, L. Tsetseris, M. J. Beck, S. N. Rashkeev, G. Hadjisavvas, I. G. Batyrev, B. R. Tuttle, A. G. Marinopoulos, X. J. Zhou, D. M. Fleetwood, and R. D. Schrimpf, “Performance, reliability, radiation effects, and aging issues in microelectronics – From atomic-scale physics to engineering-level modeling,” Solid-State Electronics, vol. 54, pp. 841-848, Sep 2010.

[29]  J. A. Pellish, M. A. Xapsos, K. A. LaBel, P. W. Marshall, D. F. Heidel, K. P. Rodbell, M. C. Hakey, P. E. Dodd, M. R. Shaneyfelt, J. R. Schwank, R. C. Baumann, X. W. Deng, A. Marshall, B. D. Sierawski, J. D. Black, R. A. Reed, R. D. Schrimpf, H. S. Kim, M. D. Berg, M. J. Campola, M. R. Friendlich, C. E. Perez, A. M. Phan, and C. M. Seidleck, “Heavy Ion Testing With Iron at 1 GeV/amu,” Ieee Transactions on Nuclear Science, vol. 57, pp. 2948-2954, Oct 2010.

[30]  Y. S. Puzyrev, B. R. Tuttle, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, “Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors,” Applied Physics Letters, vol. 96, Feb 1 2010.

[31] V. Ramachandran, M. J. Gadlage, J. R. Ahlbin, B. Narasimham, M. L. Alles, R. A. Reed, B. L. Bhuva, L. W. Massengill, J. D. Black, and C. N. Foster, “Application of a novel test system to characterize single-event effects at cryogenic temperatures,” Solid-State Electronics, vol. 54, pp. 1052-1059, Oct 2010.

[32]  N. Rezzak, R. D. Schrimpf, M. L. Alles, E. X. Zhang, D. M. Fleetwood, and Y. A. Li, “Layout-Related Stress Effects on Radiation-Induced Leakage Current,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3288-3292, Dec 2010.

[33]  T. Roy, Y. S. Puzyrev, B. R. Tuttle, D. M. Fleetwood, R. D. Schrimpf, D. F. Brown, U. K. Mishra, and S. T. Pantelides, “Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions,” Applied Physics Letters, vol. 96, Mar 29 2010.

[34]  T. Roy, E. X. Zhang, Y. S. Puzyrev, D. M. Fleetwood, R. D. Schrimpf, B. K. Choi, A. B. Hmelo, and S. T. Pantelides, “Process Dependence of Proton-Induced Degradation in GaN HEMTs,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3060-3065, Dec 2010.

[35]  J. D. Ryckman, R. A. Reed, R. A. Weller, D. M. Fleetwood, and S. M. Weiss, “Enhanced room temperature oxidation in silicon and porous silicon under 10 keV x-ray irradiation,” Journal of Applied Physics, vol. 108, Dec 1 2010.

[36]  X. Shen, S. DasGupta, R. A. Reed, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, “Recoverable degradation in InAs/AlSb high-electron mobility transistors: The role of hot carriers and metastable defects in AlSb,” Journal of Applied Physics, vol. 108, Dec 1 2010.

[37]  B. D. Sierawski, M. H. Mendenhall, R. A. Reed, M. A. Clemens, R. A. Weller, R. D. Schrimpf, E. W. Blackmore, M. Trinczek, B. Hitti, J. A. Pellish, R. C. Baumann, S. J. Wen, R. Wong, and N. Tam, “Muon-Induced Single Event Upsets in Deep-Submicron Technology,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3273-3278, Dec 2010.

[38]  B. J. Stephens and M. H. Mendenhall, “Holmium-161 produced using 11.6 MeV protons: A practical source of narrow-band X-rays,” Applied Radiation and Isotopes, vol. 68, pp. 1928-1932, Oct 2010.

[39]  L. Tsetseris, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “Hydrogen-dopant interactions in SiGe and strained Si,” Applied Physics Letters, vol. 96, Jun 21 2010.

[40]  M. Turowski, J. A. Pellish, K. A. Moen, A. Raman, J. D. Cressler, R. A. Reed, and G. F. Niu, “Reconciling 3-D Mixed-Mode Simulations and Measured Single-Event Transients in SiGe HBTs,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3342-3348, Dec 2010.

[41]  B. R. Tuttle, D. R. Hughart, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, “Defect Interactions of H(2) in SiO(2): Implications for ELDRS and Latent Interface Trap Buildup,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3046-3053, Dec 2010.

[42]  Y. G. Velo, J. Boch, N. J. H. Roche, S. Perez, J. R. Vaille, L. Dusseau, F. Saigne, E. Lorfevre, R. D. Schrimpf, C. Chatry, and A. Canals, “Bias Effects on Total Dose-Induced Degradation of Bipolar Linear Microcircuits for Switched Dose-Rate Irradiation,” Ieee Transactions on Nuclear Science, vol. 57, pp. 1950-1957, Aug 2010.

[43]  R. A. Weller, M. H. Mendenhall, R. A. Reed, R. D. Schrimpf, K. M. Warren, B. D. Sierawski, and L. W. Massengill, “Monte Carlo Simulation of Single Event Effects,” Ieee Transactions on Nuclear Science, vol. 57, pp. 1726-1746, Aug 2010.

[44]  Z. Y. Xu, G. F. Niu, L. Luo, J. D. Cressler, M. L. Alles, R. Reed, H. A. Mantooth, J. Holmes, and P. W. Marshall, “Charge Collection and SEU in SiGe HBT Current Mode Logic Operating at Cryogenic Temperatures,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3206-3211, Dec 2010.

[45]  C. X. Zhang, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, K. F. Galloway, E. Simoen, J. Mitard, and C. Claeys, “Effects of Processing and Radiation Bias on Leakage Currents in Ge pMOSFETs,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3066-3070, Dec 2010.

[46]  E. X. Zhang, D. M. Fleetwood, M. L. Alles, R. D. Schrimpf, F. E. Mamouni, W. Xiong, and S. Cristoloveanu, “Effects of fin width on memory windows in FinFET ZRAMs,” Solid-State Electronics, vol. 54, pp. 1155-1159, Oct 2010.

[47]  E. X. Zhang, D. M. Fleetwood, F. El-Mamouni, M. L. Alles, R. D. Schrimpf, W. Z. Xiong, C. Hobbs, K. Akarvardar, and S. Cristoloveanu, “Total Ionizing Dose Effects on FinFET-Based Capacitor-Less 1T-DRAMs,” Ieee Transactions on Nuclear Science, vol. 57, pp. 3298-3304, Dec 2010.

 

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