[1]      J. R. Ahlbin, L. W. Massengill, B. L. Bhuva, B. Narasimham, M. J. Gadlage, and P. H. Eaton, “Single-Event Transient Pulse Quenching in Advanced CMOS Logic Circuits,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3050-3056, Dec 2009.

[2]   O. A. Amusan, M. C. Casey, B. L. Bhuva, D. McMorrow, M. J. Gadlage, J. S. Melinger, and L. W. Massengill, “Laser Verification of Charge Sharing in a 90 nm Bulk CMOS Process,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3065-3070, Dec 2009.

[3]   O. A. Amusan, L. W. Massengill, M. P. Baze, B. L. Bhuva, A. F. Witulski, J. D. Black, A. Balasubramanian, M. C. Casey, D. A. Black, J. R. Ahlbin, R. A. Reed, and M. W. McCurdy, “Mitigation Techniques for Single-Event-Induced Charge Sharing in a 90-nm Bulk CMOS Process,” Ieee Transactions on Device and Materials Reliability, vol. 9, pp. 311-317, Jun 2009.

[4]   S. E. Armstrong, B. D. Olson, J. Popp, J. Braatz, T. D. Loveless, W. T. Holman, D. McMorrow, and L. W. Massengill, “Single-Event Transient Error Characterization of a Radiation-Hardened by Design 90 nm SerDes Transmitter Driver,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3463-3468, Dec 2009.

[5]   R. Arora, J. Rozen, D. M. Fleetwood, K. F. Galloway, C. X. Zhang, J. S. Han, S. Dimitrijev, F. Kong, L. C. Feldman, S. T. Pantelides, and R. D. Schrimpf, “Charge Trapping Properties of 3C-and 4H-SiC MOS Capacitors With Nitrided Gate Oxides,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3185-3191, Dec 2009.

[6]   M. J. Beck, Y. S. Puzyrev, N. Sergueev, K. Varga, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, “The Role of Atomic Displacements in Ion-Induced Dielectric Breakdown,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3210-3217, Dec 2009.

[7]   J. Boch, Y. G. Velo, F. Saigne, N. J. H. Roche, R. D. Schrimpf, J. R. Vaille, L. Dusseau, C. Chatry, E. Lorfevre, R. Ecoffet, and A. D. Touboul, “The Use of a Dose-Rate Switching Technique to Characterize Bipolar Devices,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3347-3353, Dec 2009.

[8]   M. C. Casey, S. E. Armstrong, R. Arora, M. P. King, J. R. Ahlbin, S. A. Francis, B. L. Bhuva, D. McMorrow, H. L. Hughes, P. J. McMarr, J. S. Melinger, and L. W. Massengill, “Effect of Total Ionizing Dose on a Bulk 130 nm Ring Oscillator Operating at Ultra-Low Power,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3262-3266, Dec 2009.

[9]   M. A. Clemens, N. A. Dodds, R. A. Weller, M. H. Mendenhall, R. A. Reed, R. D. Schrimpf, T. Koi, D. H. Wright, and M. Asai, “The Effects of Nuclear Fragmentation Models on Single Event Effect Prediction,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3158-3164, Dec 2009.

[10]  S. DasGupta, O. A. Amusan, M. L. Alles, A. F. Witulski, L. W. Massengill, B. L. Bhuva, R. D. Schrimpf, and R. A. Reed, “Use of a Contacted Buried n(+) Layer for Single Event Mitigation in 90 nm CMOS,” Ieee Transactions on Nuclear Science, vol. 56, pp. 2008-2013, Aug 2009.

[11]  J. L. Davidson, W. P. Kang, K. Subramanian, A. G. Holmes-Siedle, R. A. Reed, and K. F. Galloway, “Diamond Vacuum Electronic Device Behavior After High Neutron Fluence Exposure,” Ieee Transactions on Nuclear Science, vol. 56, pp. 2225-2229, Aug 2009.

[12]  R. M. Diestelhorst, S. D. Phillips, A. Appaswamy, A. K. Sutton, J. D. Cressler, J. A. Pellish, R. A. Reed, G. Vizkelethy, P. W. Marshall, H. Gustat, B. Heinemann, G. G. Fischer, D. Knoll, and B. Tillack, “Junction Isolation Single Event Radiation Hardening of a 200 GHz SiGe:C HBT Technology Without Deep Trench Isolation,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3402-3407, Dec 2009.

[13] N. A. Dodds, R. A. Reed, M. H. Mendenhall, R. A. Weller, M. A. Clemens, P. E. Dodd, M. R. Shaneyfelt, G. Vizkelethy, J. R. Schwank, V. Ferlet-Cavrois, J. H. Adams, R. D. Schrimpf, and M. P. King, “Charge Generation by Secondary Particles From Nuclear Reactions in BEOL Materials,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3172-3179, Dec 2009.

[14]  F. El Mamouni, E. X. Zhang, R. D. Schrimpf, D. M. Fleetwood, R. A. Reed, S. Cristoloveanu, and W. Z. Xiong, “Fin-Width Dependence of Ionizing Radiation-Induced Subthreshold-Swing Degradation in 100-nm-Gate-Length FinFETs,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3250-3255, Dec 2009.

[15]  I. S. Esqueda, H. J. Barnaby, M. L. McLain, P. C. Adell, F. E. Mamouni, S. K. Dixit, R. D. Schrimpf, and W. Xiong, “Modeling the Radiation Response of Fully-Depleted SOI n-Channel MOSFETs,” Ieee Transactions on Nuclear Science, vol. 56, pp. 2247-2250, Aug 2009.

[16]  A. L. Fedoseyev, M. Turowski, A. Raman, M. L. Alles, and R. A. Weller, “Multiscale Simulation Models for Transient Radiation Effects with 3D Ionizing Tracks in Semiconductor Nanodevices,” International Journal for Multiscale Computational Engineering, vol. 7, pp. 9-16, 2009.

[17]  M. J. Gadlage, J. R. Ahlbin, V. Ramachandran, P. Gouker, C. A. Dinkins, B. L. Bhuva, B. Narasimham, R. D. Schrimpf, M. W. McCurdy, M. L. Alles, R. A. Reed, M. H. Mendenhall, L. W. Massengill, R. L. Shuler, and D. McMorrow, “Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3115-3121, Dec 2009.

[18]  M. J. Gadlage, P. Gouker, B. L. Bhuva, B. Narasimham, and R. D. Schrimpf, “Heavy-Ion-Induced Digital Single Event Transients in a 180 nm Fully Depleted SOI Process,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3483-3488, Dec 2009.

[19]  P. M. Gouker, M. J. Gadlage, D. McMorrow, P. McMarr, H. Hughes, P. Wyatt, C. Keast, B. L. Bhuva, and B. Narasimham, “Effects of Ionizing Radiation on Digital Single Event Transients in a 180-nm Fully Depleted SOI Process,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3477-3482, Dec 2009.

[20]  C. L. Howe, R. A. Weller, R. A. Reed, B. D. Sierawski, P. W. Marshall, C. J. Marshall, M. H. Mendenhall, R. D. Schrimpf, and J. E. Hubbs, “Effects of Surrounding Materials on Proton-Induced Energy Deposition in Large Silicon Diode Arrays,” Ieee Transactions on Nuclear Science, vol. 56, pp. 2167-2170, Aug 2009.

[21] D. R. Hughart, R. D. Schrimpf, D. M. Fleetwood, X. J. Chen, H. J. Barnaby, K. E. Holbert, R. L. Pease, D. G. Platteter, B. R. Tuttle, and S. T. Pantelides, “The Effects of Aging and Hydrogen on the Radiation Response of Gated Lateral PNP Bipolar Transistors,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3361-3366, Dec 2009.

[22] J. M. Hutson, J. A. Pellish, A. D. Tipton, G. Boselli, M. A. Xapsos, H. Kim, M. Friendlich, M. Campola, S. Seidleck, K. LaBel, A. Marshall, X. Deng, R. Baumann, R. A. Reed, R. D. Schrimpf, R. A. Weller, and L. W. Massengill, “Evidence for Lateral Angle Effect on Single-Event Latchup in 65 nm SRAMs,” Ieee Transactions on Nuclear Science, vol. 56, pp. 208-213, Feb 2009.

[23]  A. Kalavagunta, M. Silvestri, M. J. Beck, S. K. Dixit, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, L. Shen, and U. K. Mishra, “Impact of Proton Irradiation-Induced Bulk Defects on Gate-Lag in GaN HEMTs,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3192-3195, Dec 2009.

[24]  J. S. Kauppila, A. L. Sternberg, M. L. Alles, A. M. Francis, J. Holmes, O. A. Amusan, and L. W. Massengill, “A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3152-3157, Dec 2009.

[25]  S. R. Kulkarni, R. D. Schrimpf, K. F. Galloway, R. Arora, C. Claeys, and E. Simoen, “Total Ionizing Dose Effects on Ge pMOSFETs With High-k Gate Stack: On/Off Current Ratio,” Ieee Transactions on Nuclear Science, vol. 56, pp. 1926-1930, Aug 2009.

[26]  T. D. Loveless, B. D. Olson, B. L. Bhuva, W. T. Holman, C. C. Hafer, and L. W. Massengill, “Analysis of Single-Event Transients in Integer-N Frequency Dividers and Hardness Assurance Implications for Phase-Locked Loops,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3489-3498, Dec 2009.

[27]  A. Madan, R. Verma, R. Arora, E. P. Wilcox, J. D. Cressler, P. W. Marshall, R. D. Schrimpf, P. F. Cheng, L. Y. Del Castillo, Q. Q. Liang, and G. Freeman, “The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of 65 nm RF-CMOS on SOI,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3256-3261, Dec 2009.

[28]  B. Narasimham, M. J. Gadlage, B. L. Bhuva, R. D. Schrimpf, L. W. Massengill, W. T. Holman, A. F. Witulski, and K. F. Galloway, “Test Circuit for Measuring Pulse Widths of Single-Event Transients Causing Soft Errors,” Ieee Transactions on Semiconductor Manufacturing, vol. 22, pp. 119-125, Feb 2009.

[29]  B. Narasimham, M. J. Gadlage, B. L. Bhuva, R. D. Schrimpf, L. W. Massengill, W. T. Holman, A. F. Witulski, R. A. Reed, R. A. Weller, and X. W. Zhu, “Characterization of Neutron- and Alpha-Particle-Induced Transients Leading to Soft Errors in 90-nm CMOS Technology,” Ieee Transactions on Device and Materials Reliability, vol. 9, pp. 325-333, Jun 2009.

[30]  H. Park, D. J. Cummings, R. Arora, J. A. Pellish, R. A. Reed, R. D. Schrimpf, D. McMorrow, S. E. Armstrong, U. Roh, T. Nishida, M. E. Law, and S. E. Thompson, “Laser-Induced Current Transients in Strained-Si Diodes,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3203-3209, Dec 2009.

[31]  R. L. Pease, R. D. Schrimpf, and D. M. Fleetwood, “ELDRS in Bipolar Linear Circuits: A Review,” Ieee Transactions on Nuclear Science, vol. 56, pp. 1894-1908, Aug 2009.

[32] J. A. Pellish, R. A. Reed, D. McMorrow, G. Vizkelethy, V. F. Cavrois, J. Baggio, P. Paillet, O. Duhamel, K. A. Moen, S. D. Phillips, R. M. Diestelhorst, J. D. Cressler, A. K. Sutton, A. Raman, M. Turowski, P. E. Dodd, M. L. Alles, R. D. Schrimpf, P. W. Marshall, and K. A. LaBel, “Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3078-3084, Dec 2009.

[33]  S. D. Phillips, T. Thrivikraman, A. Appaswamy, A. K. Sutton, J. D. Cressler, G. Vizkelethy, P. Dodd, and R. A. Reed, “A Novel Device Architecture for SEU Mitigation: The Inverse-Mode Cascode SiGe HBT,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3393-3401, Dec 2009.

[34]  R. L. Shuler, B. L. Bhuva, P. M. O’Neill, J. W. Gambles, and S. Rezgui, “Comparison of Dual-Rail and TMR Logic Cost Effectiveness and Suitability for FPGAs With Reconfigurable SEU Tolerance,” Ieee Transactions on Nuclear Science, vol. 56, pp. 214-219, Feb 2009.

[35]  B. D. Sierawski, J. A. Pellish, R. A. Reed, R. D. Schrimpf, K. M. Warren, R. A. Weller, M. H. Mendenhall, J. D. Black, A. D. Tipton, M. A. Xapsos, R. C. Baumann, X. W. Deng, M. J. Campola, M. R. Friendlich, H. S. Kim, A. M. Phan, and C. M. Seidleck, “Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3085-3092, Dec 2009.

[36]  M. Silvestri, S. Gerardin, R. D. Schrimpf, D. M. Fleetwood, F. Faccio, and A. Paccagnella, “The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3244-3249, Dec 2009.

[37]  S. L. Teich-McGoldrick, M. Bellanger, M. Caussanel, L. Tsetseris, S. T. Pantelides, S. C. Glotzer, and R. D. Schrimpf, “Design Considerations for CdTe Nanotetrapods as Electronic Devices,” Nano Letters, vol. 9, pp. 3683-3688, Nov 2009.

[38]  P. W. Tuinenga and L. W. Massengill, “Circuit Modeling of Single-Event Transient Pulse Stretching in Digital CMOS,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3165-3171, Dec 2009.

[39]  K. M. Warren, A. L. Sternberg, J. D. Black, R. A. Weller, R. A. Reed, M. H. Mendenhall, R. D. Schrimpf, and L. W. Massengill, “Heavy Ion Testing and Single Event Upset Rate Prediction Considerations for a DICE Flip-Flop,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3130-3137, Dec 2009.

[40]  R. A. Weller, R. A. Reed, K. M. Warren, M. H. Mendenhall, B. D. Sierawski, R. D. Schrimpf, and L. W. Massengill, “General Framework for Single Event Effects Rate Prediction in Microelectronics,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3098-3108, Dec 2009.

[41]  Y. M. Wong, W. P. Kang, J. L. Davidson, D. V. Kerns, J. H. Huang, and K. F. Galloway, “Characterization and CMRR Modeling of a Carbon-Nanotube Field-Emission Differential Amplifier,” Ieee Transactions on Electron Devices, vol. 56, pp. 738-743, May 2009.

[42]  F. Wrobel, F. Saigne, M. Gedion, J. Gasiot, and R. D. Schrimpf, “Radioactive Nuclei Induced Soft Errors at Ground Level,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3437-3441, Dec 2009.

[43]  T. Zhang, X. Y. Wei, G. F. Niu, J. D. Cressler, P. W. Marshall, and R. A. Reed, “A Mechanism Versus SEU Impact Analysis of Collector Charge Collection in SiGe HBT Current Mode Logic,” Ieee Transactions on Nuclear Science, vol. 56, pp. 3071-3077, Dec 2009.

 

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