[1]      J. R. Ahlbin, J. D. Black, L. W. Massengill, O. A. Amusan, A. Balasubramanian, M. C. Casey, D. A. Black, M. W. McCurdy, R. A. Reed, and B. L. Bhuva, “C-CREST Technique for Combinational Logic SET Testing,” Ieee Transactions on Nuclear Science, vol. 55, pp. 3347-3351, Dec 2008.

[2]   O. A. Amusan, P. R. Fleming, B. L. Bhuva, L. W. Massengill, A. F. Witulski, A. Balasubramanian, M. C. Casey, D. McMorrow, S. A. Nation, F. Barsun, J. S. Melinger, M. J. Gadlage, and T. D. Loveless, “Laser Verification of On-Chip Charge-Collection Measurement Circuit,” Ieee Transactions on Nuclear Science, vol. 55, pp. 3309-3313, Dec 2008.

[3]   O. A. Amusan, L. W. Massengill, M. P. Baze, A. L. Sternberg, A. F. Witulski, B. L. Bhuva, and J. D. Black, “Single Event Upsets in Deep-Submicrometer Technologies Due to Charge Sharing,” Ieee Transactions on Device and Materials Reliability, vol. 8, pp. 582-589, Sep 2008.

[4]   A. Balasubramanian, O. A. Amusan, B. L. Bhuva, R. A. Reed, A. L. Sternberg, L. W. Massengill, D. McMorrow, S. A. Nation, and J. S. Melinger, “Measurement and Analysis of Interconnect Crosstalk Due to Single Events in a 90 nm CMOS Technology,” Ieee Transactions on Nuclear Science, vol. 55, pp. 2079-2084, Aug 2008.

[5]   A. Balasubramanian, B. L. Bhuva, L. W. Massengill, B. Narasimham, R. L. Shuler, T. D. Loveless, and W. T. Holman, “A Built-In Self-Test (BIST) Technique for Single-Event Testing in Digital Circuits,” Ieee Transactions on Nuclear Science, vol. 55, pp. 3130-3135, Dec 2008.

[6]   A. Balasubramanian, P. R. Fleming, B. L. Bhuva, A. L. Sternberg, and L. W. Massengill, “Implications of dopant-fluctuation-induced V-t variations on the radiation hardness of deep submicrometer CMOS SRAMs,” Ieee Transactions on Device and Materials Reliability, vol. 8, pp. 135-144, Mar 2008.

[7]  A. Balasubramanian, D. McMorrow, S. A. Nation, B. L. Bhuva, R. A. Reed, L. W. Massengill, T. D. Loveless, O. A. Amusan, J. D. Black, J. S. Melinger, M. P. Baze, V. Ferlet-Cavrois, M. Gaillardin, and J. R. Schwank, “Pulsed Laser Single-Event Effects in Highly Scaled CMOS Technologies in the Presence of Dense Metal Coverage,” Ieee Transactions on Nuclear Science, vol. 55, pp. 3401-3406, Dec 2008.

[8]   A. Balasubramanian, B. Narasimham, B. L. Bhuva, L. W. Massengill, P. H. Eaton, M. Sibley, and D. Mavis, “Implications of Total Dose on Single-Event Transient (SET) Pulse Width Measurement Techniques,” Ieee Transactions on Nuclear Science, vol. 55, pp. 3336-3341, Dec 2008.

[9]   I. G. Batyrev, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “The Role of Water in the Radiation Response of Wet and Dry Oxides,” Ieee Transactions on Nuclear Science, vol. 55, pp. 2085-2089, Aug 2008.

[10]  I. G. Batyrev, D. Hughart, R. Durand, M. Bounasser, B. R. Tuttle, D. M. Fleetwood, R. D. Schrimpf, S. N. Rashkeev, G. W. Dunham, M. E. Law, and S. T. Pantelides, “Effects of Hydrogen on the Radiation Response of Bipolar Transistors: Experiment and Modeling,” Ieee Transactions on Nuclear Science, vol. 55, pp. 3039-3045, Dec 2008.

[11]  I. G. Batyrev, B. Tuttle, D. M. Fleetwood, R. D. Schrimpf, L. Tsetseris, and S. T. Pantelides, “Reactions of water molecules in silica-based network glasses,” Physical Review Letters, vol. 100, Mar 14 2008.

[12]  M. J. Beck, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, “Disorder-recrystallization effects in low-energy beam-solid interactions,” Physical Review Letters, vol. 100, May 9 2008.

[13]  M. J. Beck, B. R. Tuttle, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, “Atomic Displacement Effects in Single-Event Gate Rupture,” Ieee Transactions on Nuclear Science, vol. 55, pp. 3025-3031, Dec 2008.

[14]  J. D. Black, D. R. Ball, W. H. Robinson, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, D. A. Black, K. M. Warren, A. D. Tipton, P. E. Dodd, N. F. Haddad, M. A. Xapsos, H. S. Kim, and M. Friendlich, “Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection,” Ieee Transactions on Nuclear Science, vol. 55, pp. 2943-2947, Dec 2008.

[15]  M. C. Casey, O. A. Amusan, S. A. Nation, T. D. Loveless, A. Balasubramanian, B. L. Bhuva, R. A. Reed, D. McMorrow, R. A. Weller, M. L. Alles, L. W. Massengill, J. S. Melinger, and B. Narasimham, “Single-Event Effects on Combinational Logic Circuits Operating at Ultra-Low Power,” Ieee Transactions on Nuclear Science, vol. 55, pp. 3342-3346, Dec 2008.

[16]  M. C. Casey, A. R. Duncan, B. L. Bhuva, W. H. Robinson, and L. W. Massengill, “Simulation Study on the Effect of Multiple Node Charge Collection on Error Cross-Section in CMOS Sequential Logic,” Ieee Transactions on Nuclear Science, vol. 55, pp. 3136-3140, Dec 2008.

[17]  X. J. Chen, H. J. Barnaby, B. Vertneire, K. E. Holbert, D. Wright, R. L. Pease, R. D. Schrimpf, D. M. Fleetwood, S. T. Pantelides, M. R. Shaneyfelt, and P. Adell, “Post-Irradiation Annealing Mechanisms of Defects Generated in Hydrogenated Bipolar Oxides,” Ieee Transactions on Nuclear Science, vol. 55, pp. 3032-3038, Dec 2008.

[18]  F. Faccio, H. J. Barnaby, X. J. Chen, D. M. Fleetwood, L. Gonella, M. McLain, and R. D. Schrimpf, “Total ionizing dose effects in shallow trench isolation oxides,” Microelectronics Reliability, vol. 48, pp. 1000-1007, Jul 2008.

[19]  A. I. Fedoseyev, M. Turowski, M. L. Alles, and R. A. Weller, “Accurate numerical models for simulation of radiation events in nano-scale semiconductor devices,” Mathematics and Computers in Simulation, vol. 79, pp. 1086-1095, Dec 15 2008.

[20]  D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, R. L. Pease, and G. W. Dunham, “Electron Capture, Hydrogen Release, and Enhanced Gain Degradation in Linear Bipolar Devices,” Ieee Transactions on Nuclear Science, vol. 55, pp. 2986-2991, Dec 2008.

[21]  P. R. Fleming, B. D. Olson, W. T. Holman, B. L. Bhuva, and L. W. Massengill, “Design technique for mitigation of soft errors in differential switched-capacitor circuits,” Ieee Transactions on Circuits and Systems Ii-Express Briefs, vol. 55, pp. 838-842, Sep 2008.

[22] M. J. Gadlage, R. D. Schrimpf, B. Narasimham, J. A. Pellish, K. M. Warren, R. A. Reed, R. A. Weller, B. L. Bhuva, L. W. Massengill, and X. W. Zhu, “Assessing alpha particle-induced single event transient vulnerability in a 90-nm CMOS technology,” Ieee Electron Device Letters, vol. 29, pp. 638-640, Jun 2008.

[23]  A. Kalavagunta, A. Touboul, L. Shen, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, R. K. Jain, and U. K. Mishra, “Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AIN/GaN HEMTs,” Ieee Transactions on Nuclear Science, vol. 55, pp. 2106-2112, Aug 2008.

[24] T. D. Loveless, L. W. Massengill, B. L. Bhuva, W. T. Holman, M. C. Casey, R. A. Reed, S. A. Nation, D. McMorrow, and J. S. Melinger, “A Probabilistic Analysis Technique Applied to a Radiation-Hardened-by-Design Voltage-Controlled Oscillator for Mixed-Signal Phase-Locked Loops,” Ieee Transactions on Nuclear Science, vol. 55, pp. 3447-3455, Dec 2008.

[25]  X. Lu, R. Pasternak, H. Park, J. B. Qi, N. H. Tolk, A. Chatterjee, R. D. Schrimpf, and D. M. Fleetwood, “Temperature-dependent second- and third-order optical nonlinear susceptibilities at the Si/SiO(2) interface,” Physical Review B, vol. 78, Oct 2008.

[26]  R. H. Magruder, A. Stesmans, K. Clemer, R. A. Weeks, and R. A. Weller, “The effect of implanting nitrogen on the optical absorption and electron paramagnetic resonance spectra of silica,” Journal of Non-Crystalline Solids, vol. 354, pp. 3580-3585, Jul 15 2008.

[27]  R. H. Magruder, A. Stesmans, R. A. Weeks, and R. A. Weller, “The effect of implanting boron on the optical absorption and electron paramagnetic resonance spectra of silica,” Journal of Applied Physics, vol. 104, Sep 1 2008.

[28]  F. E. Mamouni, S. K. Dixit, R. D. Schrimpf, P. C. Adell, I. S. Esqueda, M. L. McLain, H. J. Barnaby, S. Cristoloveanu, and W. Z. Xiong, “Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices,” Ieee Transactions on Nuclear Science, vol. 55, pp. 3259-3264, Dec 2008.

[29]  L. W. Massengill and P. W. Tuinenga, “Single-Event Transient Pulse Propagation in Digital CMOS,” Ieee Transactions on Nuclear Science, vol. 55, pp. 2861-2871, Dec 2008.

[30]  S. J. McMahon, M. H. Mendenhall, S. Jain, and F. Currell, “Radiotherapy in the presence of contrast agents: a general figure of merit and its application to gold nanoparticles,” Physics in Medicine and Biology, vol. 53, pp. 5635-5651, Oct 21 2008.

[31]  E. J. Montes, R. A. Reed, J. A. Pellish, M. L. Alles, R. D. Schrimpf, R. A. Weller, M. Varadharajaperumal, G. F. Niu, A. K. Sutton, R. Diestelhorst, G. Espinel, R. Krithivasan, J. P. Comeau, J. D. Cressler, P. W. Marshall, and G. Vizkelethy, “Single event upset mechanisms for low-energy-deposition events in SiGeHBTs,” Ieee Transactions on Nuclear Science, vol. 55, pp. 1581-1586, Jun 2008.

[32]  B. Narasimham, O. A. Amusan, B. L. Bhuva, R. D. Schrimpf, and W. T. Holman, “Extended SET Pulses in Sequential Circuits Leading to Increased SE Vulnerability,” Ieee Transactions on Nuclear Science, vol. 55, pp. 3077-3081, Dec 2008.

[33]  B. Narasimham, B. L. Bhuva, R. D. Schrimpf, L. W. Massengill, M. J. Gadlage, W. T. Holman, A. F. Witulski, W. H. Robinson, J. D. Black, J. M. Benedetto, and P. H. Eaton, “Effects of guard bands and well contacts in mitigating long SETs in advanced CMOS processes,” Ieee Transactions on Nuclear Science, vol. 55, pp. 1708-1713, Jun 2008.

[34]  B. Narasimham, J. W. Gambles, R. L. Shuler, B. L. Bhuva, and L. W. Massengill, “Quantifying the Effect of Guard Rings and Guard Drains in Mitigating Charge Collection and Charge Spread,” Ieee Transactions on Nuclear Science, vol. 55, pp. 3456-3460, Dec 2008.

[35]  B. Narasimham, R. L. Shuler, J. D. Black, B. L. Bhuva, R. D. Schrimpf, A. F. Witulski, W. T. Holman, and L. W. Massengill, “Quantifying the reduction in collected charge and soft errors in the presence of guard rings,” Ieee Transactions on Device and Materials Reliability, vol. 8, pp. 203-209, Mar 2008.

[36]  S. A. Nation, L. W. Massengill, D. McMorrow, L. Evans, and A. Straatveit, “Laser Dose-Rate Simulation to Complement LINAC Discrete Device Data,” Ieee Transactions on Nuclear Science, vol. 55, pp. 3114-3121, Dec 2008.

[37]  B. D. Olson, W. T. Holman, L. W. Massengill, and B. L. Bhuva, “Evaluation of Radiation-Hardened Design Techniques Using Frequency Domain Analysis,” Ieee Transactions on Nuclear Science, vol. 55, pp. 2957-2961, Dec 2008.

[38]  B. D. Olson, W. T. Holman, L. W. Massengill, B. L. Bhuva, and P. R. Fleming, “Single-Event Effect Mitigation in Switched-Capacitor Comparator Designs,” Ieee Transactions on Nuclear Science, vol. 55, pp. 3440-3446, Dec 2008.

[39]  S. T. Pantelides, Z. Y. Lu, C. Nicklaw, T. Bakos, S. N. Rashkeev, D. M. Fleetwood, and R. D. Schrimpf, “The E ‘ center and oxygen vacancies in SiO2,” Journal of Non-Crystalline Solids, vol. 354, pp. 217-223, Jan 15 2008.

[40]  H. W. Park, S. K. Dixit, Y. S. Choi, R. D. Schrimpf, D. M. Fleetwood, T. Nishida, and S. E. Thompson, “Total Ionizing Dose Effects on Strained HfO(2)-Based nMOSFETs,” Ieee Transactions on Nuclear Science, vol. 55, pp. 2981-2985, Dec 2008.

[41]  J. A. Pellish, R. A. Reed, D. McMorrow, J. S. Melinger, P. Jenkins, A. K. Sutton, R. M. Diestelhorst, S. D. Phillips, J. D. Cressler, V. Pouget, N. D. Pate, J. A. Kozub, M. H. Mendenhall, R. A. Weller, R. D. Schrimpf, P. W. Marshall, A. D. Tipton, and G. F. Niu, “Laser-Induced Current Transients in Silicon-Germanium HBTs,” Ieee Transactions on Nuclear Science, vol. 55, pp. 2936-2942, Dec 2008.

[42]  T. Roy, A. F. Witulski, R. D. Schrimpf, M. L. Alles, and L. W. Massengill, “Single Event Mechanisms in 90 nm Triple-Well CMOS Devices,” Ieee Transactions on Nuclear Science, vol. 55, pp. 2948-2956, Dec 2008.

[43]  R. D. Schrimpf, K. M. Warren, D. R. Ball, R. A. Weller, R. A. Reed, D. M. Fleetwood, L. W. Massengill, M. H. Mendenhall, S. N. Rashkeev, S. T. Pantelides, and M. A. Alles, “Multi-Scale Simulation of Radiation Effects in Electronic Devices,” Ieee Transactions on Nuclear Science, vol. 55, pp. 1891-1902, Aug 2008.

[44]  J. R. Schwank, M. R. Shaneyfelt, A. Dasgupta, S. A. Francis, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, J. A. Felix, P. E. Dodd, V. Ferlet-Cavrois, P. Paillet, S. M. Dalton, S. E. Swanson, G. L. Hash, S. M. Thornberg, J. M. Hochrein, and G. K. Lum, “Effects of Moisture and Hydrogen Exposure on Radiation-Induced MOS Device Degradation and Its Implications for Long-Term Aging,” Ieee Transactions on Nuclear Science, vol. 55, pp. 3206-3215, Dec 2008.

[45]  J. R. Schwank, M. R. Shaneyfelt, D. M. Fleetwood, J. A. Felix, P. E. Dodd, P. Paillet, and V. Ferlet-Cavrois, “Radiation Effects in MOS Oxides,” Ieee Transactions on Nuclear Science, vol. 55, pp. 1833-1853, Aug 2008.

[46]  A. K. Sutton, K. Moen, J. D. Cressler, M. A. Carts, P. W. Marshall, J. A. Pellish, V. Ramachandran, R. A. Reed, M. L. Alles, and G. Nju, “Proton-induced SEU in SiGe digital logic at cryogenic temperatures,” Solid-State Electronics, vol. 52, pp. 1652-1659, Oct 2008.

[47] A. D. Tipton, J. A. Pellish, J. M. Hutson, R. Baumann, X. Deng, A. Marshall, M. A. Xapsos, H. S. Kim, M. R. Friendlich, M. J. Campola, C. M. Seidleck, K. A. Label, M. H. Mendenhall, R. A. Reed, R. D. Schrimpf, R. A. Weller, and J. D. Black, “Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs,” Ieee Transactions on Nuclear Science, vol. 55, pp. 2880-2885, Dec 2008.

[48]  A. D. Tipton, X. W. Zhu, H. X. Weng, J. A. Pellish, P. R. Fleming, R. D. Schrimpf, R. A. Reed, R. A. Weller, and M. Mendenhall, “Increased Rate of Multiple-Bit Upset From Neutrons at Large Angles of Incidence,” Ieee Transactions on Device and Materials Reliability, vol. 8, pp. 565-570, Sep 2008.

[49]  K. M. Warren, A. L. Stemberg, R. A. Weller, M. P. Baze, L. W. Massengill, R. A. Reed, M. H. Mendenhall, and R. D. Schrimpf, “Integrating Circuit Level Simulation and Monte-Carlo Radiation Transport Code for Single Event Upset Analysis in SEU Hardened Circuitry,” Ieee Transactions on Nuclear Science, vol. 55, pp. 2886-2894, Dec 2008.

[50]  X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf, F. Faccio, and L. Gonella, “Radiation Effects on the 1/f Noise of Field-Oxide Field Effect Transistors,” Ieee Transactions on Nuclear Science, vol. 55, pp. 2975-2980, Dec 2008.

 

---