[1]        P. C. Adell, A. F. Witulski, R. D. Schrimpf, R. Marec, V. Pouget, P. Calvel, and F. Bezerra, “Single event-induced instability in linear voltage regulators,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3506-3511, Dec 2006.

[2]        A. M. Albadri, R. D. Schrimpf, K. F. Galloway, and D. G. Walker, “Single event burnout in power diodes: Mechanisms and models,” Microelectronics Reliability, vol. 46, pp. 317-325, Feb-Apr 2006.

[3]        O. A. Amusan, A. F. Witulski, L. W. Massengill, B. L. Bhuva, P. R. Fleming, M. L. Alles, A. L. Sternberg, J. D. Black, and R. D. Schrimpf, “Charge collection and charge sharing in a 130 nm CMOS technology,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3253-3258, Dec 2006.

[4]        A. Balasubramanian, A. L. Sternberg, B. L. Bhuva, and L. W. Massengill, “Crosstalk effects caused by single event hits in deep sub-micron CMOS technologies,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3306-3311, Dec 2006.

[5]        D. R. Ball, K. M. Warren, R. A. Weller, R. A. Reed, A. Kobayashi, J. A. Pellish, M. H. Mendenhall, C. L. Howe, L. W. Massengill, R. D. Schrimpf, and N. F. Haddad, “Simulating nuclear events in a TCAD model of a high-density SEU hardened SRAM technology,” Ieee Transactions on Nuclear Science, vol. 53, pp. 1794-1798, Aug 2006.

[6]        I. G. Batyrev, M. P. Rodgers, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “Effects of water on the aging and radiation response of MOS devices,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3629-3635, Dec 2006.

[7]        M. J. Beck, L. Tsetseris, M. Caussanel, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, “Atomic-scale mechanisms for low-NIEL dopant-type dependent damage in Si,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3621-3628, Dec 2006.

[8]        M. Bellini, B. B. Jun, T. B. Chen, J. D. Cressler, P. W. Marshall, D. K. Chen, R. D. Schrimpf, D. M. Fleetwood, and J. Cai, “X-ray irradiation and bias effects in fully-depleted and partially-depleted SiGeHBTs fabricated on CMOs-compatible SOI,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3182-3186, Dec 2006.

[9]        M. F. Bernard, L. Dusseau, J. Boch, J. R. Vaille, F. Saigne, R. D. Schrimpf, E. Lorfevre, and J. P. David, “Analysis of bias effects on the total-dose response of a bipolar voltage comparator,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3232-3236, Dec 2006.

[10]     J. Boch, F. Saigne, L. Dusseau, and R. D. Schrimpf, “Temperature effect on geminate recombination,” Applied Physics Letters, vol. 89, Jul 24 2006.

[11]     J. Boch, F. Saigne, R. D. Schrimpf, J. R. Vaille, L. Dusseau, and E. Lorfevre, “Physical model for the low-dose-rate effect in bipolar devices,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3655-3660, Dec 2006.

[12]     J. Boch, F. Saigne, A. D. Touboul, S. Ducret, J. F. Carlotti, M. Bernard, R. D. Schrimpf, F. Wrobel, and G. Sarrabayrouse, “Dose rate effects in bipolar oxides: Competition between trap filling and recombination,” Applied Physics Letters, vol. 88, Jun 5 2006.

[13]     Y. Boulghassoul, L. W. Massengill, A. L. Sternberg, B. L. Bhuva, and W. T. Holman, “Towards SET mitigation in RF digital PLLs: From error characterization to radiation hardening considerations,” Ieee Transactions on Nuclear Science, vol. 53, pp. 2047-2053, Aug 2006.

[14]     M. C. Casey, B. L. Bhuva, J. D. Black, L. W. Massengill, O. A. Amusan, and A. F. Witulski, “Single-event tolerant latch using cascode-voltage switch logic gates,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3386-3391, Dec 2006.

[15]     X. J. Chen, H. J. Barnaby, R. D. Schrimpf, D. M. Fleetwood, R. L. Pease, D. G. Platteter, and G. W. Dunham, “Nature of interface defect buildup in gated bipolar devices under low dose rate irradiation,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3649-3654, Dec 2006.

[16]     S. K. Dixit, S. Dhar, J. Rozen, S. W. Wang, R. D. Schrimpf, D. M. Fleetwood, S. T. Pantelides, J. R. Williams, and L. C. Feldman, “Total dose radiation response of nitrided and non-nitrided SiO2/4H-SiC MOS capacitors,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3687-3692, Dec 2006.

[17]     L. Dusseau, M. F. Bernard, J. Boch, J. R. Vaille, F. Saigne, R. D. Schrimpf, E. Lorfevre, and J. P. David, “Analysis of total-dose response of a bipolar voltage comparator combining radiation experiments and design data,” Ieee Transactions on Nuclear Science, vol. 53, pp. 1910-1916, Aug 2006.

[18]     R. D. Geil, B. R. Rogers, R. A. Weller, and J. L. Hilton, “Evaluation of depth resolution with time-of-flight medium energy backscattering,” Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, vol. 243, pp. 377-384, Feb 2006.

[19]     J. M. Hutson, V. Ramachandran, B. L. Bhuva, X. Zhu, R. D. Schrimpf, O. A. Amusan, and L. M. Massengill, “Single event-induced error propagation through nominally-off transmission gates,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3558-3562, Dec 2006.

[20]     B. G. Jun, R. M. Diestelhorst, M. Bellini, G. Espinel, A. Appaswamy, A. P. G. Prakash, J. D. Cressler, D. K. Chen, R. D. Schrimpf, D. M. Fleetwood, M. Turowski, and A. Raman, “Temperature-dependence of off-state drain leakage in X-ray irradiated 130 nm CMOS devices,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3203-3209, Dec 2006.

[21]     W. P. Kang, Y. M. Wong, J. L. Davidson, D. V. Kenis, B. K. Choi, J. H. Huang, and K. F. Galloway, “Carbon nanotubes vacuum field emission differential amplifier integrated circuits,” Electronics Letters, vol. 42, pp. 210-211, Feb 16 2006.

[22]     T. D. Loveless, L. W. Massengill, B. L. Bhuva, W. T. Holman, A. F. Witulski, and Y. Boulghassoul, “A hardened-by-design technique for RF digital phase-locked loops,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3432-3438, Dec 2006.

[23]     G. Lucovsky, D. M. Fleetwood, S. Lee, H. Seo, R. D. Schrimpf, J. A. Felix, J. Luning, L. B. Fleming, M. Ulrich, and D. E. Aspnes, “Differences between charge trapping states in irradiated nano-crystalline HfO2 and non-crystalline Hf silicates,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3644-3648, Dec 2006.

[24]     R. Magruder, A. Stesmans, K. Clemer, R. A. Weeks, and R. A. Weller, “Origins of optical absorption between 4.8 and 4.9 eV in silica implanted with Si and with O ions,” Journal of Non-Crystalline Solids, vol. 352, pp. 3027-3034, Aug 15 2006.

[25]     R. H. Magruder, A. Stesmans, K. Clemer, R. A. Weeks, and R. A. Weller, “Sources of optical absorption between 5.7 and 5.9 eV in silica implanted with Si or O,” Journal of Applied Physics, vol. 100, Aug 1 2006.

[26]     B. Narasimham, B. L. Bhuva, W. T. Holman, R. D. Schrimpf, L. W. Massengill, A. F. Witulski, and W. H. Robinson, “The effect of negative feedback on single event transient propagation in digital circuits,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3285-3290, Dec 2006.

[27]     B. Narasimham, V. Ramachandran, B. L. Bhuva, R. D. Schrimpf, A. F. Witulski, W. T. Holman, L. W. Massengill, J. D. Black, W. H. Robinson, and D. McMorrow, “On-chip characterization of single-event transient pulsewidths,” Ieee Transactions on Device and Materials Reliability, vol. 6, pp. 542-549, Dec 2006.

[28]     J. A. Pellish, R. A. Reed, R. D. Schrimpf, M. L. Alles, M. Varadharajaperumal, G. F. Niu, A. K. Sutton, R. M. Diestelhorst, G. Espinel, R. Krithivasan, J. P. Comeau, J. D. Cressler, G. Vizkelethy, P. W. Marshall, R. A. Weller, M. H. Mendenhall, and E. J. Montes, “Substrate engineering concepts to mitigate charge collection in deep trench isolation technologies,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3298-3305, Dec 2006.

[29]     V. Ramachandran, B. Narasimham, D. M. Fleetwood, R. D. Schrimpf, W. T. Holman, A. E. Witulski, R. L. Pease, G. W. Dunham, J. E. Seiler, and D. G. Platteter, “Modeling total-dose effects for a low-dropout voltage regulator,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3223-3231, Dec 2006.

[30]     R. A. Reed, R. A. Weller, R. D. Schrimpf, M. H. Mendenhall, K. M. Warren, and L. W. Massengill, “Implications of nuclear reactions for single-event effects test methods and analysis,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3356-3362, Dec 2006.

[31]     J. R. Schwank, M. R. Shaneyfelt, J. A. Felix, P. E. Dodd, J. Baggio, V. Ferlet-Cavrois, P. Paillet, G. L. Hash, R. S. Flores, L. W. Massengill, and E. Blackmore, “Effects of total dose irradiation on single-event upset hardness,” Ieee Transactions on Nuclear Science, vol. 53, pp. 1772-1778, Aug 2006.

[32]     R. L. Shuler, A. Balasubramanian, B. Narasimham, B. L. Bhuva, P. M. O’Neill, and C. Kouba, “The effectiveness of TAG or guard-gates in SET suppression using delay and dual-rail configurations at 0.35 mu m,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3428-3431, Dec 2006.

[33]     B. D. Sierawski, B. L. Bhuva, and L. W. Massengill, “Reducing soft error rate in logic circuits through approximate logic functions,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3417-3421, Dec 2006.

[34]     A. L. Sternberg, L. W. Massengill, M. Hale, and B. Blalock, “Single-event sensitivity and hardening of a pipelined analog-to-digital converter,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3532-3538, Dec 2006.

[35]     A. K. Sutton, R. Krithivasan, P. W. Marshall, M. A. Carts, C. Seidleck, R. Ladbury, J. D. Cressler, C. J. Marshall, S. Currie, R. A. Reed, G. F. Niu, B. Randall, K. Fritz, D. McMorrow, and B. Gilbert, “SEU error signature analysis of Gbit/s SiGe logic circuits using a pulsed laser microprobe,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3277-3284, Dec 2006.

[36]     A. K. Sutton, A. P. G. Prakash, B. G. Jun, E. H. Zhao, M. Bellini, J. Pellish, R. M. Diestelhorst, M. A. Carts, A. Phan, R. Ladbury, J. D. Cressler, P. W. Marshall, C. J. Marshall, R. A. Reed, R. D. Schrimpf, and D. M. Fleetwood, “An investigation of dose rate and source dependent effects in 200 GHz SiGe HBTs,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3166-3174, Dec 2006.

[37]     A. D. Tipton, J. A. Pellish, R. A. Reed, R. D. Schrimpf, R. A. Weller, M. H. Mendenhall, B. Sierawski, A. K. Sutton, R. M. Diestelhorst, G. Espinel, J. D. Cressler, P. W. Marshall, and G. Vizkelethy, “Multiple-bit upset in 130 nm CMOS technology,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3259-3264, Dec 2006.

[38]     Y. V. White, X. Lu, R. Pasternak, N. H. Tolk, A. Chatterjee, R. D. Schrimpf, D. M. Fleetwood, A. Ueda, and R. Mu, “Studies of charge carrier trapping and recombination processes in Si/SiO2/MgO structures using second-harmonic generation,” Applied Physics Letters, vol. 88, Feb 6 2006.

[39]     X. J. Zhou, D. M. Fleetwood, L. Tsetseris, R. D. Schrimpf, and S. T. Pantelides, “Effects of switched-bias annealing on charge trapping in HfO2 gate dielectrics,” Ieee Transactions on Nuclear Science, vol. 53, pp. 3636-3643, Dec 2006.

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