A. R. Duncan, V. Srinivasan, A. L. Sternberg, W. H. Robinson, B. L. Bhuva, and L. W. Massengill, “Comparison of SEUTool Results to Experimental Results in Boeing Radiation Tolerant DSP (BDSP C30),” IEEE Transactions on Nuclear Science, vol. 52, pp. 2224-2230, 2005.

A. S. Kobayashi, D. R. Ball, R.A. Reed, K. M. Warren, M. H. Mendenhall, R. D. Schrimpf, R. A. Weller, “The Effect of Metallization Layers on Single Event Susceptibility,” IEEE Trans. Nucl. Sci., vol. 53, pp. 2189 – 2193, 2005.

C. J. Marshall, R. A. Kimble, J. Yagelowich, P. W. Marshall, A. Waczynski, E.J. Polidan, S. D. Johnson, G. Delo, A. M. Russell, R. A. Reed, D. Schlossberg, T. Beck, Sigma; Y. Wen, R. J. Hill, “Hot Pixel Formation and Annealing Behavior in CCDs Irradiated at -83°C,” IEEE Trans. Nucl. Sci., vol. 53, pp. 2672 – 2677, 2005.

C. L. Howe, R. A. Weller, R. A. Reed, R. D. Schrimpf, L. W. Massengill, K. M. Warren, D. R. Ball, M. H. Mendenhall, K. A. LaBel, J. W. Howard Jr., “Monte Carlo Study of Radiation-Induced Energy Deposition in Scaled Microelectronic Structures,” IEEE Trans. Nucl. Sci., vol. 53, pp. 2182 – 2188, 2005.

G. Niu, H. Yang, M. Varadharajaperumal, Y. Shi, J. Cressler, R. Krishivasan, P. Marshal, R.A. Reed, “A New Back Junction Approach For Reducing Charge Collection in 200 GHz SiGe HBTs,” IEEE Trans. Nucl. Sci., vol. 53, pp. 2153 – 2157, 2005.

J. C. Pickel, R. A. Reed, R. A. Weller, M.H. Mendenhall, R. D. Schrimpf, R. Ladbury, G. Gee, B. Fodness, P. W. Marshall, T. M. Jordan, M. McKelvey, R. McMurray, K. Ennico, C. McCreight, A. Waczynski, E. Polidan, S. Johnson, “Transient Radiation Effects in Ultra-Low Noise HgCdTe IR Detector Arrays for Space-based Astronomy,” IEEE Trans. Nucl. Sci., vol. 53, pp. 2657 – 2663, 2005.

K. M. Warren, R. A. Weller, R. A. Reed, D. R. Ball, M. L. Alles, L. W. Massengill, R. D. Schrimpf, M. H. Mendenhall, C. L. Howe, B. D. Olson, N. F. Haddad, S. E. Doyle, D. McMorrow, J. S. Melinger, W. T. Lotshaw, ““The Contributions of Nuclear Reactions to Single Event Upset Cross-Section Measurements in a High-Density SEU Hardened SRAM Technology,” IEEE Trans. Nucl. Sci., vol. 53, pp. 2125 – 2131, 2005.

L. Tsetseris, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “Physical mechanisms of negative-bias temperature instability”, Appl. Phys. Lett. 86, 142103-1 to 142103-3 (2005).

L. Tsetseris, R. D. Schrimpf, D. M. Fleetwood, R. L. Pease, and S. T. Pantelides, “Common origin for enhanced low-dose-rate sensitivity and bias temperature instability under negative bias,” IEEE Trans. Nucl. Sci. 52, 2265-2271 (2005).

M. P. Rodgers, D. M. Fleetwood, R. D. Schrimpf, I. G. Batyrev, S. Wang, and S. T. Pantelides, “The effects of aging on MOS irradiation and annealing response,” IEEE Trans. Nucl. Sci. 52, 2642-2648 (2005).

P. Marshall, M. Carts, R. A.Reed, C. Siedleck, R. Ladbury, S. Currie, B. Randall, K. Fritz, B. Gilbert, K. Kennedy, C. Marshall, K. LaBel, R. Krithivasan, J. Cressler, D. McMorrow, S. Buchner, “Autonomous Bit Error Rate Testing at Multi-Gbit/s Rates Using a Circuit for Radiation Effects SelfTest (CREST),” IEEE Trans. Nucl. Sci., vol. 53, pp. 2446 – 2454, 2005.

R. R. Cizmarik, R. D. Schrimpf, D. M. Fleetwood, K. F. Galloway, D. G. Platteter, M. R. Shaneyfelt, R. L. Pease, J. Boch, D. R. Ball, J. D. Rowe, and M. C. Maher, “The impact of mechanical stress on the total-dose response of linear bipolar transistors with various passivation layers,” IEEE Trans. Nucl. Sci. 52, No. 5, 1513-1517 (2005).

V. Srinivasan, A. L. Sternberg, A. R. Duncan, W. H. Robinson, B. L. Bhuva, and L. W. Massengill, “Single-Event Mitigation in Combinational Logic Using Targeted Data Path Hardening,” IEEE Transactions on Nuclear Science, vol. 52, pp. 2516-2523, 2005.

V. Srinivasan, J. W. Farquharson, W. H. Robinson, and B. L. Bhuva, “Evaluation of Error Detection Strategies for an FPGA-Based Self-Checking Arithmetic and Logic Unit,” presented at the 2005 Military and Aerospace Programmable Logic Devices Conference (MAPLD 2005), Washington, D.C., September 2005.

X. J. Zhou, D. M. Fleetwood, J. A. Felix, E. P. Gusev, and C. D’Emic, “Bias-temperature instabilities and radiation effects in MOS devices,” IEEE Trans. Nucl. Sci. 52, 2231-2238 (2005).