A.K. Sutton, B.M. Haugerud, Y. Lu, W.M.L. Kuo, J.D. Cressler, P.W. Marshall, R.A. Reed, J.S. Rieh, G. Freeman, D. Ahlgren, “Proton Tolerance of Fourth-Generation 350 GHz UHV/CVD SiGe HBTs,” IEEE Trans. Nuc. Sci., vol. 51, no. 6, Dec. 2004, pp. 3736 – 3742.

B. Jun, M. Fouillat, R. D. Schrimpf, D. M. Fleetwood, and S. Cristoloveanu, “Total dose radiation effects in partially-depleted SOI transistors with ultrathin gate oxide”, Proceeedings IEEE SOI Conference, Charleston SC, October 4-7, 2004, pp. 30-31.

B. Jun, Y. V. White, R. D. Schrimpf, D. M. Fleetwood, F. Brunier, N. Bresson, S. Cristoloveanu, and N. H. Tolk, “Characterization of multiple Si/SiO2 interfaces in silicon-on-insulator materials via second-harmonic generation”, Appl. Phys. Lett. 85, 3095-3097 (2004).

B. Jun, H. D. Xiong, A. L. Sternberg, C. R. Cirba, D. Chen, R. D. Schrimpf, D. M. Fleetwood, J. R. Schwank, and S. Cristoloveanu, “Total dose effects on double gate fully depleted SOI MOSFETs”, IEEE Trans. Nucl. Sci. 51, 3767-3772 (2004).

B. Jun, R. D. Schrimpf, D. M. Fleetwood, Y. V. White, R. Pasternak, S. N. Rashkeev, F. Brunier, N. Bresson, M. Fouillat, S. Cristoloveanu, and N. H. Tolk, “Charge trapping in irradiated SOI wafers measured by second harmonic generation”, IEEE Trans. Nucl. Sci. 51, 3231-3237 (2004).

Boulghassoul, Y.; Adell, P.C.; Rowe, J.D.; Massengill, L.W.; Schrimpf, R.D.; Sternberg, A.L., “System-level design hardening based on worst-case ASET Simulations”, Nuclear Science, IEEE Transactions on Volume 51, Issue 5, Part 3, Oct. 2004 Page(s):2787 – 2793

Buchner, S.; Campbell, A.B.; Sternberg, A.; Massengill, L.; McMorrow, D.; Dyer, C., “Validity of using a fixed analog input for evaluating the SEU sensitivity of a flash analog-to-digital converter”, Nuclear Science, IEEE Transactions on Volume 52, Issue 1, Part 3, Feb. 2005 Page(s):462 – 467

E. Zhao, A.K. Sutton, B.M. Haugerud, J.D. Cressler, P.W. Marshall, R.A. Reed, B. El-Kareh, S. Balster, H. Yasuda, “The Effects of Radiation on 1/f Noise in Complementary$(npn+pnp)$SiGe HBTs,” IEEE Trans. Nuc. Sci., vol. 51, no. 6, Dec. 2004, pp. 3243 – 3249.

H. D. Xiong, D. M. Fleetwood, and J. R. Schwank, “Low-frequency noise and radiation response of buried oxides in SOI nMOS transistors”, IEE Proc. Circuits, Devices & Systems 151, 118-124 (2004).

H. D. Xiong, B. Jun, D. M. Fleetwood, R. D. Schrimpf, and J. R. Schwank, “Charge trapping and low frequency noise in SOI buried oxides”, IEEE Trans. Nucl. Sci. 51, 3238-3242 (2004).

J. A. Felix, H. D. Xiong, D. M. Fleetwood, E. P. Gusev, R. D. Schrimpf, A. L. Sternberg, and C. D. Emic, “Interface trapping properties of nMOSFETs with Al2O3/SiOxNy/Si (100) gate dielectric stacks after exposure to ionizing radiation”, Microelectron. Engrg. 72, 50-54 (2004).

J. A. Felix, J. R. Schwank, C. R. Cirba, R. D. Schrimpf, M. R. Shaneyfelt, D. M. Fleetwood, and P. E. Dodd, “Influence of total-dose radiation on the electrical characteristics of SOI MOSFETs”, Microelectron. Engrg. 72, 332-341 (2004).

J. A. Felix, J. R. Schwank, D. M. Fleetwood, M. R. Shaneyfelt, and E. P. Gusev, “Effects of radiation and charge trapping on the reliability of high-K gate dielectrics”, Microelectron. Reliab. 44, 563-575 (2004).

J. A. Felix, M. R. Shaneyfelt, D. M. Fleetwood, J. R. Schwank, P. E. Dodd, E. P. Gusev, R. M. Fleming, and C. D. Emic, “Charge trapping and annealing in high-K gate dielectrics”, IEEE Trans. Nucl. Sci. 51, 3143-3149 (2004).

J. Andrews, M. Morton, J. Lee, J. Papapolymerou, J.D. Cressler, A.K. Sutton, B.M. Haugerud, P.W. Marshall, R.A. Reed, D. Cho, “The Effects of Proton Irradiation on the Performance of mm-Wave Transmission Lines Implemented in SiGe Technology,” IEEE Trans. Nuc. Sci., vol. 51, no. 6, Dec. 2004, pp. 3807 – 3810.

J. Boch, F. Saigne, R. D. Schrimpf, D. M. Fleetwood, R. Cizmarik, and D. Zander, “Elevated temperature irradiation at high dose rate of commercial linear bipolar ICs”, IEEE Trans. Nucl. Sci. 51, 2903-2907 (2004).

J. Boch, F. Saigne, R. D. Schrimpf, D. M. Fleetwood, S. Ducret, L. Dusseau, J. P. David, J. Fesquet, J. Gasiot, and R. Ecoffet, “Effect of switching from high to low dose rate on linear bipolar technology radiation response”, IEEE Trans. Nucl. Sci. 51, No. 5, 2896-2902 (2004).

J. Boch, F. Saigne, S. Ducret, R. D. Schrimpf, D. M. Fleetwood, P. Iacconi, and L. Dusseau, “Total dose effects on bipolar integrated circuits: characterization of the saturation region”, IEEE Trans. Nucl. Sci. 51, 3225-3230 (2004).

J. R. Schwank, D. M. Fleetwood, H. D. Xiong, M. R. Shaneyfelt, and B. L. Draper, “Generation of metastable electron traps in the near interfacial region of SOI buried oxides by ion implantation and their effect on device properties”, Microelectron. Engrg. 72, 362-366 (2004).

J. W. Stacey, R. D. Schrimpf, D. M. Fleetwood, and K. C. Holmes, “Using surface charge analysis to characterize the radiation response of Si/SiO2 structures”, IEEE Trans. Nucl. Sci. 51, 3686-3691 (2004).

J.P. Comeau, A.K. Sutton, B.M. Haugerud, J.D. Cressler, W.M.L. Kuo, P.W. Marshall, R.A. Reed, A. Karroy, R. VanArt, “Proton Tolerance of Advanced SiGe HBTs Fabricated on Different Substrate Materials,” IEEE Trans. Nuc. Sci., vol. 51, no. 6, Dec. 2004, pp. 3743 – 3747.

Kobayashi, A.S.; Sternberg, A.L.; Massengill, L.W.; Schrimpf, R.D.; Weller, R.A.; Nuclear Science, “Spatial and temporal characteristics of energy deposition by protons and alpha particles in silicon”, IEEE Transactions on Volume 51, Issue 6, Part 2, Dec. 2004 Page(s):3312 – 3317.

L. Tsetseris, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “Dual role of fluorine at the Si-SiO2 interface”, Appl. Phys. Lett. 85, 4950-4952 (2004).

M. R. Shaneyfelt, J. R. Schwank, D. M. Fleetwood, R. L. Pease, J. A. Felix, P. E. Dodd, and M. C. Maher, “Annealing behavior of linear bipolar devices with enhanced low-dose-rate sensitivity”, IEEE Trans. Nucl. Sci. 51, 3172-3177 (2004).

M. Varadharajaperumal, G. Niu, J.D. Cressler, R.A. Reed, P.W. Marshall, “Three-Dimensional Simulation of Heavy-Ion Induced Charge Collection in SiGe HBTs on SOI,” IEEE Trans. Nuc. Sci., vol. 51, no. 6, Dec. 2004, pp. 3298 – 3303.

P. Marshall, M. Carts, A. Campbell, R. Ladbury, R. Reed, C. Marshall, S. Currie, D. McMorrow, S. Buchner, C. Seidleck, P. Riggs, K. Fritz, B. Randall, B. Gilbert, “A Comparative Study of Heavy-Ion and Proton-Induced Bit-Error Sensitivity and Complex Burst-Error Modes in Commercially Available High-Speed SiGe BiCMOS,” IEEE Trans. Nuc. Sci., vol. 51, no. 6, Dec. 2004, pp. 3457 – 3463.

P.J. McNulty, J.D. Kinnison, R.H. Maurer, D.R. Roth, R.A. Reed, W.G. Abdel-Kader, “Energy-Deposition Events Measured by the CRRES PHA Experiment,” IEEE Trans. Nuc. Sci., vol. 51, no. 6, Dec. 2004, pp. 3381 – 3387.

R. A. Weller, M. H. Mendenhall, and D. M. Fleetwood, “A screened Coulomb scattering module for displacement damage computations in Geant4”, IEEE Trans. Nucl. Sci. 51, 3669-3678 (2004).

R. A. Weller, R. D. Schrimpf, R. A. Reed, A. L. Sternberg, A. S. Kobayashi, M. H. Mendenhall, L. W. Massengill, and D. M. Fleetwood, “Modeling Semiconductor Device Response using Detailed Radiation Event Simulations,” J. Rad. Effects: Research and Engineering, submitted for publication, 2004.

R. Ladbury, R.A. Reed, P.W. Marshall, K.A. LaBel, R. Anantaraman, R. Fox, D.P. Sanderson, A. Stolz, J. Yurkon, A.F. Zeller, J.W. Stetson, “Performance of the High-Energy Single-Event Effects Test Facility (SEETF) at Michigan State University’s National Superconducting Cyclotron Laboratory (NSCL),” IEEE Trans. Nuc. Sci., vol. 51, no. 6, Dec. 2004, pp. 3664 – 3668.

(Invited) R.A. Reed, P.W. Marshall, K.A. LaBel, “Space Radiation Effects in Optocouplers,” International Journal of High Speed Electronics and Systems, World Scientific Publishing Co, to be published in 2004.

S. Buchner, A. Campbell, R. Reed, B. Fodness, S. Kuboyama, “Angular Dependence of Multiple-Bit Upsets Induced by Protons in a 16 Mbit DRAM,” IEEE Trans. Nuc. Sci., vol. 51, no. 6, Dec. 2004, pp. 3270 – 3277.

S. Ducret, F. Saigne, J. Boch, R. D. Schrimpf, D. M. Fleetwood, J. R. Vaille, L. Dusseau, J. P. David, and R. Ecoffet, “Effect of thermal annealing on radiation-induced degradation of bipolar technologies when the dose rate is switched from high to low”, IEEE Trans. Nucl. Sci. 51, 3219-3224 (2004).

S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “Hydrogen at the Si/SiO2 Interface: From Atomic-Scale Calculations to Engineering Models, in Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices”, edited by R. D. Schrimpf and D. M. Fleetwood (World Scientific, Singapore, 2004), pp. 291-296.

S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “Effects of hydrogen motion on interface trap formation and annealing”, IEEE Trans. Nucl. Sci. 51, 3158-3165 (2004).

W.M.L. Kuo, Y. Lu, B.A. Floyd, B.M. Haugerud, A.K. Sutton, R. Krithivasan, J.D. Cressler, B.P. Gaucher, P.W. Marshall, R.A. Reed, G. Freeman, ”Proton Radiation Response of Monolithic Millimeter-Wave Transceiver Building Blocks Implemented in 200 GHz SiGe Technology,” IEEE Trans. Nuc. Sci., vol. 51, no. 6, Dec. 2004, pp. 3781 – 3787.

X. Hu, B. K. Choi, H. J. Barnaby, D. M. Fleetwood, R. D. Schrimpf, S. C. Lee, S. Shojah-Ardalan, R. Wilkins, U. K. Mishra, and R. Dettmer, “The Energy Dependence of Proton-Induced Degradation in AlGaN/GaN High Electron Mobility Transistors”, IEEE Trans. Nucl. Sci. 51, 293-297 (2004) [also in RADECS2002 Workshop Proc., pp. 17-20, 2002].

X. J. Zhou, L. Tsetseris, S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, J. A. Felix, E. P. Gusev, and C. D. Emic, “Negative bias-temperature instabilities in MOS devices with SiO2 and SiOxNy/HfO2 gate dielectrics”, Appl. Phys. Lett. 84, 4394-4396 (2004).

Z. Luo, T. Chen, A.C. Ahyi, A.K. Sutton, B.M. Haugerud, J.D. Cressler, D.C. Sheridan, J.R. Williams, P.W. Marshall, R.A. Reed, “Proton Radiation Effects in 4H-SiC Diodes and MOS Capacitors, ” IEEE Trans. Nuc. Sci., vol. 51, no. 6, Dec. 2004, pp. 3748 – 3752.