B. D. White, L. J. Brillson, M. Bataiev, D. M. Fleetwood, R. D. Schrimpf, B. K. Choi, and S. T. Pantelides, “Detection of Trap Activation by Ionizing Radiation in SiO2 by Spatially Localized Cathodoluminescence Spectroscopy”, J. Appl. Phys. 92, 5729-5734 (2002).

B. D. White, M. Bataiev, L. J. Brillson, B. K. Choi, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, R. W. Dettmer, W. J. Schaff, J. G. Champlain, and U. K. Mishra, “Characterization of 1.8 MeV Proton Irradiated AlGaN/GaN Field-Effect Transistor Structures by Nanoscale Depth-Resolved Luminescence Spectroscopy”, IEEE Trans. Nucl. Sci. 49, 2695-2701 (2002).

B. K. Choi, D. M. Fleetwood, L. W. Massengill, R. D. Schrimpf, K. F. Galloway, M. R. Shaneyfelt, T. L. Meisenheimer, P. E. Dodd, J. R. Schwank, Y. M. Lee, R. S. Johnson, and G. Lucovsky, “Reliability Degradation of Ultra-thin Oxynitride and Al2O3 Gate Dielectric Films Owing to Heavy-Ion Irradiation,” Electron. Lett., vol. 34, pp. 157-158, 2002.

B. K. Choi, D. M. Fleetwood, R. D. Schrimpf, L. W. Massengill, K. F. Galloway, M. R. Shaneyfelt, T. L. Meisenheimer, P. E. Dodd, J. R. Schwank, Y. M. Lee, R. S. Johnson, and G. Lucovsky, “Long-Term Reliability Degradation of Ultra-Thin Dielectric Films due to Heavy-Ion Irradiation”, IEEE Trans. Nucl. Sci. 49, 3045-3050 (2002).

C. J. Nicklaw, Z. Y. Lu, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “The Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous SiO2”, IEEE Trans. Nucl. Sci. 49, 2667-2673 (2002).

D. M. Fleetwood, “Effects of Hydrogen Transport and Reactions on Microelectronics Radiation Response and Reliability”, Microelectron. Reliab. 42, 523-541 (2002).

D. M. Fleetwood, H. D. Xiong, Z. Y. Lu, C. J. Nicklaw, J. A. Felix, R. D. Schrimpf, and S. T. Pantelides, “Unified Model of Hole Trapping, 1/f Noise, and Thermally Stimulated Current in MOS Devices”, IEEE Trans. Nucl. Sci. 49, 2674-2683 (2002).

D. M. Fleetwood, “Hydrogen-Related Reliability Issues for Advanced Microelectronics”, Microelectron. Reliab. 42, 1397-1403 (2002).

H. D. Xiong, D. M. Fleetwood, B. K. Choi, and A. L. Sternberg, “Temperature Dependence and Irradiation Response of 1/f Noise in MOSFETs”, IEEE Trans. Nucl. Sci. 49, 2718-2723 (2002).

H. J. Barnaby, S. K. Smith, R. D. Schrimpf, D. M. Fleetwood, and R. L. Pease, “Analytical Model for Proton Radiation Effects in Bipolar Devices”, IEEE Trans. Nucl. Sci. 49, 2643-2649 (2002).

J. A. Felix, D. M. Fleetwood, R. D. Schrimpf, J. G. Hong, G. Lucovsky, J. R. Schwank, and M. R. Shaneyfelt, “Total Dose Radiation Response of Hafnium Silicate Capacitors”, IEEE Trans. Nucl. Sci. 49, 3191-3196 (2002).

M. R. Shaneyfelt, R. L. Pease, J. R. Schwank, M. C. Maher, G. L. Hash, D. M. Fleetwood, P. E. Dodd, C. A. Reber, S. C. Witczak, L. C. Riewe, H. P. Hjalmarson, J. C. Banks, B. L. Doyle, and J. A. Knapp, “Impact of Passivation Layers on Enhanced Low-Dose-Rate Sensitivity and Preirradiation Elevated-Temperature Stress Effects in Linear Bipolar ICs”, IEEE Trans. Nucl. Sci. 49, 3171-3179 (2002).

R.L. Pease, A.L. Sternberg, Y. Boulghassoul, L.W. Massengill, S. Buchner, D. McMorrow, D.S. Walsh, G.L. Hash, S.D. LaLumondiere, S.C. Moss,”Comparison of SETs in bipolar linear circuits generated with an ion microbeam, laser light, and circuit simulation”,Nuclear Science, IEEE Transactions on , Volume: 49 , Issue: 6 , Dec. 2002, Pages:3163 – 3170

S. Buchner, D. McMorrow, A.L. Sternberg, L.W. Massengill, R.L. Pease, M. Maher, “Single-event transient (SET) characterization of an LM119 voltage comparator: an approach to SET model validation using a pulsed laser”,Nuclear Science, IEEE Transactions on , Volume: 49 , Issue: 3 , June 2002 Pages:1502 – 1508

S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “Dual Behavior of H+ at Si-SiO2 Interfaces: Mobility versus Trapping”, Appl. Phys. Lett. 81, 1839-1841 (2002).

S. N. Rashkeev, C. R. Cirba, D. M. Fleetwood, R. D. Schrimpf, S. C. Witczak, A. Michez, and S. T. Pantelides, “Physical Model for Enhanced Interface-Trap Formation at Low Dose Rates”, IEEE Trans. Nucl. Sci. 49, 2650-2655 (2002).

X. Hu, B. K. Choi, H. J. Barnaby, D. M. Fleetwood, R. D. Schrimpf, K. F. Galloway, R. A. Weller, K. McDonald, U. K. Mishra, and R. Dettmer, “Proton-Induced Degradation in AlGaAs/GaAs Heterojunction Bipolar Transistors”, IEEE Trans. Nucl. Sci. 49, 3213-3216 (2002).

Y. Boulghassoul, L.W. Massengill, A.L. Sternberg, R.L. Pease, S. Buchner, J.W. Howard, D. McMorrow, M.W. Savage, C. Poivey,”Circuit modeling of the LM124 operational amplifier for analog single-event transient analysis”,Nuclear Science, IEEE Transactions on , Volume: 49 , Issue: 6 , Dec. 2002 Pages:3090 – 3096

Z. Y. Lu, C. J. Nicklaw, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous SiO2”, Phys. Rev. Lett. 89, 285505-1 to 285505-4 (2002).