A. P. Karmarkar, B. K. Choi, R. D. Schrimpf, and D. M. Fleetwood, “Aging and Baking Effects on the Radiation Hardness of MOS Capacitors,” IEEE Trans. Nucl. Sci., vol. 48, pp. 2158-2163, 2001.

D. G. Walker, T. S. Fisher, J. Liu, and R. D. Schrimpf, “Thermal modeling of single event burnout failure in semiconductor power devices,” Microelectronics Reliability, vol. 41, pp. 571-578, 2001.

F. Saigne, L. Dusseau, J. Fesquet, J. Gasiot, R. Ecoffet, R. D. Schrimpf, and K. F. Galloway, “Evaluation of MOS Devices’ Total Dose Response Using the Isochronal Annealing Method,” IEEE Trans. Nucl. Sci., vol. 48, pp. 2170-2173, 2001.

H. J. Barnaby, R. D. Schrimpf, A. L. Sternberg, V. Berthe, C. R. Cirba, and R. L. Pease, “Proton Radiation Response Mechanisms in Bipolar Analog Circuits,” IEEE Trans. Nucl. Sci., vol. 48, pp. 2074-2080, 2001.

J. A. Felix, D. M. Fleetwood, L. C. Riewe, M. R. Shaneyfelt, and P. S. Winokur, “Bias and Frequency Dependence of Radiation-Induced Charge Trapping in MOS Devices,” IEEE Trans. Nucl. Sci. 48, 2114-2120 (2001).

J. R. Schwank, M. R. Shaneyfelt, T. L. Meisenheimer, B. L. Draper, K. Vanheusden, and D. M. Fleetwood, “Silicon-on-Insulator Nonvolatile FET Memory,” Microelectron. Eng. 59, 253-258 (2001).

L. J. Wise, R. D. Schrimpf, H. G. Parks, and K. F. Galloway, “A Generalized Model for the Lifetime of Microelectronic Components, Applied to Storage Conditions,” Microelectronics Reliability, vol. 41, pp. 317-322, 2001.

L. W. Massengill, B. K. Choi, D. M. Fleetwood, R. D. Schrimpf, K. F. Galloway, M. R. Shaneyfelt, T. L. Meisenheimer, P. E. Dodd, J. R. Schwank, Y. M. Lee, R. S. Johnson, and G. Lucovsky, “Heavy-Ion-Induced Breakdown in Ultra-Thin Gate Oxides and High-k Dielectrics,” IEEE Trans. Nucl. Sci., vol. 48, pp. 1904-1912, 2001.

M. P. Pagey, R. D. Schrimpf, K. F. Galloway, C. J. Nicklaw, S. Ikeda, and S. Kamohara, “A Hydrogen-Transport-Based Interface-Trap-Generation Model for Hot-Carrier Reliability Prediction,” IEEE Electron Device Letters, vol. 22, pp. 290-292, 2001.

R. A. Anderson, C. H. Seager, B. L. Draper, M. R. Shaneyfelt, H. D. Stewart, A. G. Sault, G. V. Herrera, and D. M. Fleetwood, “Investigation of Protonated-Oxide Memory Structures,” SAND2001-0139, available through NTIS (January 2001).

R. L. Pease, A. Sternberg, L. W. Massengill, R. D. Schrimpf, S. Buchner, M. Savage, J. Titus, and T. Turflinger, “Critical Charge for Single-Event Transients (SETs) in Bipolar Linear Circuits,” IEEE Trans. Nucl. Sci., vol. 48, pp. 1966-1972, 2001.

S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “Defect generation by hydrogen at the Si-SiO2 interface,” Phys. Rev. Lett., vol. 87, pp. 165506.1-165506.4, 2001.

S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “Proton-Induced Defect Generation at the Si-SiO2 Interface,” IEEE Trans. Nucl. Sci., vol. 48, pp. 2086-2092, 2001.