C. J. Nicklaw, M. P. Pagey, S. T. Pantelides, D. M. Fleetwood, R. D. Schrimpf, K. F. Galloway, J. E. Wittig, B. M. Howard, E. Taw, W. H. McNeil, and J. F. Conley, Jr., “Defects and Nanocrystals Generated by Si Implantation into a-SiO2,” IEEE Trans. Nucl. Sci., vol. 47, pp. 2269-2275, 2000.

D. M. Fleetwood, L. C. Riewe, P. S. Winokur, and F. W. Sexton, “Dielectric Breakdown of Thin Oxides During Ramped Current-Temperature Stress,” IEEE Trans. Nucl. Sci. 47, 2305-2310 (2000).

D. M. Fleetwood (Vanderbilt University), P. S. Winokur, and P. E. Dodd (Sandia National Laboratories), “Overview of Radiation Effects in the Space Telecommunications Environment”, Microelectron. Reliab., accepted for publication (Jan. 2000) [Invited].

F. Saigne, L. Dusseau, J. Fesquet, J. Gasiot, R. Ecoffet, R. D. Schrimpf, and K. F. Galloway, “Prediction of the One-Year Thermal Annealing of Irradiated Commercial Devices Based on Experimental Isochronal Curves,” IEEE Trans. Nucl. Sci., vol. 47, pp. 2244-2248, 2000.

F. Saigne, L. Dusseau, J. Fesquet, J. Gasiot, R. Ecoffet, R. D. Schrimpf, and K. F. Galloway, “Experimental Procedure to Predict the Competition Between the Degradation Induced by Irradiation and Thermal Annealing of Oxide Trapped Charge in MOSFETs,” IEEE Trans. Nucl. Sci., vol. 47, pp. 2329-2333, 2000.

H. J. Barnaby, C. Cirba, R. D. Schrimpf, S. L. Kosier, P. Fouillat, and X. Montagner, “Modeling BJT Radiation Response with Non-Uniform Energy Distributions of Interface Traps,” IEEE Trans. Nucl. Sci., vol. 47, pp. 514-518, 2000.

H. J. Barnaby, C. R. Cirba, R. D. Schrimpf, D. M. Fleetwood, R. L. Pease, M. R. Shaneyfelt, T. Turflinger, J. F. Krieg, and M. C. Maher, “Origins of Total-Dose Response Variability in Linear Bipolar Microcircuits,” IEEE Trans. Nucl. Sci., vol. 47, pp. 2342-2349, 2000.

J. H. Scofield, N. Borland, and D. M. Fleetwood, “Temperature-Independent Switching Rates for a Random Telegraph Signal in a Si MOSFET at Low Temperatures,” Appl. Phys. Lett. 76, 3248-3250 (2000).

J. R. Schwank, M. R. Shaneyfelt, P. E. Dodd, V. Ferlet-Cavrois, R. A. Loemker, P. S. Winokur, D. M. Fleetwood, P. Paillet, J. L. Leray, B. L. Draper, S. C. Witczak, and L. C. Riewe, “Correlation Between Co-60 and X-ray Radiation-Induced Charge Buildup in Silicon-on-Insulator Buried Oxides,” IEEE Trans. Nucl. Sci. 47, 2175-2182 (2000).

M. R. Shaneyfelt, J. R. Schwank, S. C. Witczak, D. M. Fleetwood, R. L. Pease, P. S. Winokur, L. C. Riewe, and G. L. Hash, “Thermal-Stress Effects and Enhanced Low Dose Rate Sensitivity in Linear Bipolar ICs,” IEEE Trans. Nucl. Sci. 47, 2539-2545 (2000).

P. Adell, R. D. Schrimpf, H. J. Barnaby, R. Marec, C. Chatry, P. Calvel, C. Barillot, and O. Mion, “Analysis of Single-Event Transients in Analog Circuits,” IEEE Trans. Nucl. Sci., vol. 47, pp. 2616-2623, 2000.

P. E. Bunson, M. Di Ventra, S. T. Pantelides, D. M. Fleetwood, and R. D. Schrimpf, “Hydrogen-Related Defects in Irradiated SiO2,” IEEE Trans. Nucl. Sci., vol. 47, pp. 2289-2296, 2000.

R. J. Milanowski, M. P. Pagey, J. F. Conley, Jr., L. W. Massengill, R. D. Schrimpf, and K. F. Galloway, “Transient Simulation of Radiation-Induced Charge Trapping and Interface Trap Formation Using a Three-Carrier Transport Model for Silicon Dioxide,” J. Radiation Effects, vol. 18, pp. 115-125, 2000.

S. J. Cai, Y. S. Tang, R. Li, Y. Y. Wei, L. Wong, Y. L. Chen, K. L. Wang, M. Chen, Y. F. Zhao, R. D. Schrimpf, J. C. Keay, and K. F. Galloway, “Annealing Behavior of a Proton Irradiated AlxGa1-xN/GaN High Electron Mobility Transistor Grown by MBE,” IEEE Trans. Electron Devices, vol. 47, pp. 304-307, 2000.

S. K. Mukundan, M. P. Pagey, C. R. Cirba, R. D. Schrimpf, and K. F. Galloway, “TCAD-Based Simulation of Hot-Carrier Degradation in p-Channel MOSFETs Using Silicon Energy-Balance and Oxide Carrier-Transport Equations,” IEEE J. Technology Computer Aided Design, www.jtcad.tec.ufl.edu/archive.html, 2000.

S. T. Pantelides, S. N. Rashkeev, R. Buczko, D. M. Fleetwood, and R. D. Schrimpf, “Reactions of Hydrogen with Si-SiO2 Interfaces,” IEEE Trans. Nucl. Sci., vol. 47, pp. 2262-2268, 2000.

S. C. Lee, A. Raparla, Y. F. Li, G. Gasiot, R. D. Schrimpf, D. M. Fleetwood, K. F. Galloway, M. Featherby, and D. Johnson, “Total Dose Effects in Composite Nitride-Oxide Films,” IEEE Trans. Nucl. Sci., vol. 47, pp. 2297-2304, 2000.

Z. Marka, S. K. Singh, W. Wang, S. C. Lee, J. Kavich, B. Glebov, S. N. Rashkeev, A. P. Karmarkar, R. G. Albridge, S. T. Pantelides, R. D. Schrimpf, D. M. Fleetwood, and N. H. Tolk, “Characterization of X-ray Radiation Damage in Si/SiO2 Structures Using Second Harmonic Generation,” IEEE Trans. Nucl. Sci., vol. 47, pp. 2256-2261, 2000.