D. M. Fleetwood, P. S. Winokur, L. C. Riewe, and R. A. Reber, Jr. (SNL), “Bulk Oxide and Border Traps in MOS Capacitors”, J. Appl. Phys. 84, 6141-6148 (1998).

F. W. Sexton, D. M. Fleetwood, M. R. Shaneyfelt, P. E. Dodd, G. L. Hash, L. P. Schanwald, R. A. Loemker (SNL), K. S. Krisch, M. L. Green, B. E. Weir, and P. J. Silverman (Bell Labs – Lucent Technologies), “Precursor Ion Damage and Angular Dependence of Single Event Gate Rupture in Thin Oxides”, IEEE Trans. Nucl. Sci. 45, 2509-2518 (1998).

H. J. Barnaby, R. D. Schrimpf (Vanderbilt Univ.), D. M. Fleetwood (SNL), and S. L. Kosier (VTC Electronics), “The Effects of Emitter-Tied Field Plates on Lateral PNP Ionizing Radiation Response,” IEEE Bipolar Circuits and Technology Meeting Tech. Digest (1998), pp. 35-38.

J. E. Pizano, T. H. Ma, J. O. Attia, R. D. Schrimpf, K. F. Galloway, and A. F. Witulski, “Total Dose Effects on Power-MOSFET Switching Converters,” Microelectronics Reliability, vol. 38, pp. 1935-1939, 1998.

K. Vanheusden (AF Research Lab), D. M. Fleetwood, M. R. Shaneyfelt, B. L. Draper, and J. R. Schwank (SNL), “Effects of Irradiation and Proton Implantation on the Density of Mobile Protons in SiO2”, IEEE Trans. Nucl. Sci. 45, 2391-2397 (1998).

K. Vanheusden (AF Research Lab), W. L. Warren, D. M. Fleetwood, J. R. Schwank, M. R. Shaneyfelt, B. L. Draper, P. S. Winokur (SNL), R. A. B. Devine (France Telecom/CNET), L. B. Archer, G. A. Brown, and R. M. Wallace (Texas Instruments), “Chemical Kinetics of Mobile-Proton Generation and Annihilation in SiO2 Thin Films”, Appl. Phys. Lett. 73, 674-676 (1998).

K. Vanheusden, S. P. Karna, R. D. Pugh (Air Force Research Lab), W. L. Warren, D. M. Fleetwood (SNL), R. A. B. Devine (France Telecom/CNET), and A. H. Edwards (Univ. of North Carolina – Charlotte), “Thermally Activated Electron Capture by Mobile Protons in SiO2 Thin Films”, Appl. Phys. Lett. 72, 28-30 (1998).

L.W. Massengill, M.S. Reza, B.L. Bhuva, and T.L. Turflinger, “Single-Event Upset Cross-Section Modeling in Combinational CMOS Logic Circuits,” Journal of Radiation Effects, Research, and Engineering, vol. 16, no. 1, 1998.

M. R. Shaneyfelt, J. R. Schwank, D. M. Fleetwood, and P. S. Winokur (SNL), “Effects of Irradiation Temperature on MOS Radiation Response”, IEEE Trans. Nucl. Sci. 45, 1372-1378 (1998).

P. Cazenave, P. Fouillat, X. Montagner, H. Barnaby, R. D. Schrimpf, L. Bonora, J. P. David, A. Touboul, M.-C. Calvet, and P. Calvel, “Total Dose Effects on Gate Controlled Lateral PNP Bipolar Junction Transistors,” IEEE Trans. Nucl. Sci., vol. 45, pp. 2577-2583, 1998.

R. J. Graves, C. R. Cirba, R. D. Schrimpf, R. J. Milanowski, A. Michez, D. M. Fleetwood, S. C. Witczak, and F. Saigne, “Modeling Low-Dose-Rate Effects in Irradiated Bipolar-Base Oxides,” IEEE Trans. Nucl. Sci., vol. 45, pp. 2352-2360, 1998.

R. J. Milanowski, M. P. Pagey, L. W. Massengill, R. D. Schrimpf, M. E. Wood, B. W. Offord, R. J. Graves, K. F. Galloway, C. J. Nicklaw, and E. P. Kelley, “TCAD-Assisted Analysis of Back-Channel Leakage in Irradiated Mesa SOI nMOSFETs,” IEEE Trans. Nucl. Sci., vol. 45, pp. 2593-2599, 1998.

R. L. Pease (RLP Research), M. R. Shaneyfelt, P. S. Winokur, D. M. Fleetwood (SNL), J. Gorlick, S. McClure (Hughes), S. Clark (NSWC Crane), L. Cohn (DSWA), and D. Alexander (Mission Research Corporation), “Mechanisms for Total Dose Sensitivity to Preirradiation Thermal Stress in Bipolar Linear Microcircuits”, IEEE Trans. Nucl. Sci. 45, 1425-1430 (1998).

S. C. Witczak, R. C. Lacoe, D. C. Mayer, D. M. Fleetwood, R. D. Schrimpf, and K. F. Galloway, “Space Charge Limited Degradation of Bipolar Oxides at Low Electric Fields,” IEEE Trans. Nucl. Sci., vol. 45, pp. 2339-2351, 1998.

S. C. Witczak, R. D. Schrimpf, H. J. Barnaby, R. C. Lacoe, D. C. Mayer, K. F. Galloway, R. L. Pease, and D. M. Fleetwood, “Moderated Degradation Enhancement of Lateral pnp Transistors Due to Measurement Bias,” IEEE Trans. Nucl. Sci., vol. 45, pp. 2644-2648, 1998.

X. Montagner, R. Briand, P. Fouillat, R. D. Schrimpf, A. Touboul, K. F. Galloway, M. C. Calvet, and P. Calvel, “Dose-Rate and Irradiation Temperature Dependence of BJT SPICE Model Rad-Parameters,” IEEE Trans. Nucl. Sci., vol. 45, pp. 1431-1437, 1998.

Y. F. Zhao, R. D. Schrimpf, A. R. Patwary, M. A. Neifeld, A. W. Al-Johani, R. A. Weller, and K. F. Galloway, “Annealing Effects on Multi-Quantum Well Laser Diodes after Proton Irradiation,” IEEE Trans. Nucl. Sci., vol. 45, pp. 2826-2832, 1998.