D. M. Fleetwood, M. J. Johnson, T. L. Meisenheimer, P. S. Winokur, W. L. Warren (SNL), and S. C. Witczak (Aerospace Corp.), “1/f Noise, Hydrogen Transport, and Latent Interface-Trap Buildup in Irradiated MOS Devices”, IEEE Trans. Nucl. Sci. 44, 1810-1817 (1997). Meritorious Paper Award, 1997 IEEE Nuclear and Space Radiation Effects Conference (tie).

D. M. Fleetwood (SNL), “Revised Model of Thermally Stimulated Current in MOS Capacitors”, IEEE Trans. Nucl. Sci. 44, 1826-1835 (1997).

F. K. Chai, J. R. Brews, R. D. Schrimpf, and D. P. Birnie, III, “Domain Switching and Spatial Dependence of Permittivity in Ferroelectric Thin Films,” J. Appl. Phys., vol. 82, pp. 2505-2516, 1997.

F. K. Chai, J. R. Brews, R. D. Schrimpf, and D. P. Birnie, III, “Profiling of Electrical Doping Concentration in Ferroelectrics,” J. Appl. Phys., vol. 82, pp. 2517-2527, 1997.

F. Saign�, L. Dusseau, L. Albert, J. Fesquet, J. Gasiot, J. P. David, R. Eccofet, R. D. Schrimpf, and K. F. Galloway, “Experimental Determination of the Frequency Factor of Thermal Annealing Processes in Metal-Oxide-Semiconductor Gate-Oxide Structures,” J. Appl. Phys., vol. 82, pp. 4102-4107, 1997.

F. Saign�, L. Dusseau, J. Fesquet, J. Gasiot, R. Ecoffet, J. P. David, R. D. Schrimpf, and K. F. Galloway, “Experimental Validation of an Accelerated Method of Oxide-Trap-Level Characterization for Predicting Long Term Thermal Effects in Metal Oxide Semiconductor Devices,” IEEE Trans. Nucl. Sci., vol. 44, pp. 2001-2006, 1997.

F. W. Sexton, D. M. Fleetwood, M. R. Shaneyfelt, P. E. Dodd, and G. L. Hash (SNL), “Single Event Gate Rupture in Thin Gate Oxides”, IEEE Trans. Nucl. Sci. 44, 2345-2352 (1997). Outstanding Paper Award, 1997 IEEE Nuclear and Space Radiation Effects Conference.

J.A. Main, D.V. Newton, L.W. Massengill, and E. Garcia, “Efficient Power Amplifiers for Piezoelectric Applications,” Smart Materials and Structures, vol. 5, no. 6, 1997.

K. F. Galloway and R. D. Schrimpf, “A Survey of Device Reliability Concerns for LV/LP IC Technologies,” Microelectronic Engineering, vol. 39, pp. 225-234, 1997.

K. Vanheusden (Phillips Lab), R. A. B. Devine (France Telecom/CNET), J. R. Schwank, D. M. Fleetwood (SNL), R. G. Polcawich, W. L. Warren (SNL), S. P. Karna, and R. D. Pugh (Phillips Lab), “Irradiation Response of Mobile Protons in Buried SiO2 Films”, IEEE Trans. Nucl. Sci. 44, 2087-2094 (1997).

K. Vanheusden, W. L. Warren (SNL), R. A. B. Devine (France Telecom/CNET), D. M. Fleetwood, J. R. Schwank, M. R. Shaneyfelt, P. S. Winokur (SNL), and Z. J. Lemnios (DARPA), “Nonvolatile Memory Device Based on Mobile Protons in SiO2 Thin Films”, Nature 386, 587-589 (1997).

K. Vanheusden, J. R. Schwank, W. L. Warren, D. M. Fleetwood (SNL), and R. A. B. Devine (France Telecom/CNET), “Radiation-Induced H+ Trapping in Buried SiO2”, Microel. Eng. 36, 241-245 (1997).

L. Dusseau, T. L. Randolph, R. D. Schrimpf, K. F. Galloway, F. Saigne, J. Fesquet, J. Gasiot, and R. Ecoffet, “Prediction of Low Dose-Rate Effects in Power Metal Oxide Semiconductor Field Effect Transistors Based on Isochronal Annealing Measurements,” J. Appl. Phys., vol. 81, pp. 2437-2441, 1997.

M. J. Johnson and D. M. Fleetwood (SNL), “Correlation Between Latent Interface Trap Buildup and 1/f Noise in Metal-Oxide-Semiconductor Transistors”, Appl. Phys. Lett 70, 1158-1160 (1997).

M. R. Shaneyfelt, P. S. Winokur, D. M. Fleetwood, G. L. Hash, J. R. Schwank, F. W. Sexton (SNL), and R. L. Pease (RLP Research), “Impact of Aging on Radiation Hardness”, IEEE Trans. Nucl. Sci. 44, 2040-2047 (1997).

M. Simons (RTI), R. L. Pease (RLP Research), D. M. Fleetwood, J. R. Schwank (SNL), and M. F. Krzesniak (NSWC Crane), “Dose Enhancement in a Room Cobalt-60 Source”, IEEE Trans. Nucl. Sci. 44, 2052-2057 (1997).

R. L. Pease (RLP Research), L. M. Cohn (DSWA), D. M. Fleetwood (SNL), M. A. Gehlhausen, T. L. Turflinger (NSWC Crane), D. B. Brown (NRL), and A. H. Johnston (JPL), “A Proposed Hardness Assurance Test Methodology for Bipolar Linear Circuits and Devices in a Space Ionizing Radiation Environment”, IEEE Trans. Nucl. Sci. 44, 1981-1988 (1997).

S. C. Witczak, R. D. Schrimpf, D. M. Fleetwood, K. F. Galloway, R. C. Lacoe, D. C. Mayer, J. M. Puhl, R. L. Pease, and J. S. Suehle, “Hardness Assurance Testing of Bipolar Junction Transistors at Elevated Irradiation Temperatures,” IEEE Trans. Nucl. Sci., vol. 44, pp. 1989 2000, 1997.

W. L. Warren, D. M. Fleetwood, J. R. Schwank, M. R. Shaneyfelt, B. L. Draper, P. S. Winokur, M. G. Knoll (SNL), K. Vanheusden (Phillips Lab), R. A. B. Devine (France Telecom/CNET), L. B. Archer, and R. M. Wallace (Texas Instruments), “Protonic Nonvolatile Field Effect Transistor Memories in Si/SiO2/Si Structures”, IEEE Trans. Nucl. Sci. 44, 1789-1798 (1997).

X. Montagner, P. Fouillat, A. Touboul, H. Lapuyade, R. D. Schrimpf, and K. F. Galloway, “Mod�lisation des effets des radiations sur les transistors bipolaires,” Revue de L’�lectricit� et de L’�lectronique, no. 4, pp. 67-70, 1997.

X. Montagner, P. Fouillat, R. Briand, R. D. Schrimpf, A. Touboul, K. F. Galloway, M. C. Calvet, and P. Calvel, “Implementation of Total Dose Effects in the Bipolar Junction Transistor Gummel-Poon Model,” IEEE Trans. Nucl. Sci., vol. 44, pp. 1922-1929, 1997.

Y. F. Zhao, A. R. Patwary, R. D. Schrimpf, M. A. Neifeld, and K. F. Galloway, “200 MeV Proton Damage Effects on Multi-Quantum-Well Laser Diodes,” IEEE Trans. Nucl. Sci., vol. 44, pp. 1898-1905, 1997.