D. M. Fleetwood (SNL), “Fast and Slow Border Traps in MOS Devices”, IEEE Trans. Nucl. Sci. 43, 779-786 (1996). [Invited].

D. M. Fleetwood (SNL) and N. S. Saks (NRL), “Oxide, Interface, and Border Traps in Thermal, N2O, and N2O-Nitrided Oxides”, J. Appl. Phys. 79, 1583-1594 (1996).

D. M. Schmidt, A. Wu, R. D. Schrimpf, D. M. Fleetwood, and R. L. Pease, “Modeling Ionizing-Radiation-Induced Gain Degradation of the Lateral PNP Bipolar Junction Transistor,” IEEE Trans. Nucl. Sci., vol. 43, pp. 3032-3039, 1996.

G. H. Johnson, K. F. Galloway, R. D. Schrimpf, J. L. Titus, C. F. Wheatley, M. Allenspach, and C. Dachs, “A Physical Interpretation for the Single-Event-Gate-Rupture Cross-Section of N-Channel Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 43, pp. 2932-2937, 1996.

G.H. Johnson, J.M. Palau, C. Dachs, K.F. Galloway, and R.D. Schrimpf, “A Review of the Techniques Used for Modeling Single-Event Effects in Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 43, pp. 546-560, 1996.

I. Mouret, P. Calvel, M. Allenspach, J.L. Titus, C.F. Wheatley, K.A. LaBel, M.-C. Calvet, R.D. Schrimpf, and K.F. Galloway, “Measurement of a Cross-Section for Single-Event Gate Rupture in Power MOSFETs,” IEEE Electron Device Letters, vol. 17, pp. 163-165, 1996.

I. Mouret, M.-C. Calvet, P. Calvel, P. Tastet, M. Allenspach, K. A. LaBel, J. L. Titus, C. F. Wheatley, R. D. Schrimpf, and K. F. Galloway, “Experimental Evidence of the Temperature and Angular Dependence in SEGR,” IEEE Trans. Nucl. Sci., vol. 43, pp. 936-943, 1996.

J. L. Titus, C. F. Wheatley, M. Allenspach, R. D. Schrimpf, D. I. Burton, J. F. Brews, K. F. Galloway, and R. L. Pease, “Influence of Ion Beam Energy on SEGR Failure Thresholds of Vertical Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 43, pp. 2938-2943, 1996.

J. M. Galbraith, K. F. Galloway, R. D. Schrimpf, and G. H. Johnson, “Reliability Challenges for Low Voltage/Low Power Integrated Circuits,” Quality and Reliability Engineering International, vol. 12, pp. 271-279, 1996.

K. Vanheusden, W. L. Warren, J. R. Schwank, D. M. Fleetwood, M. R. Shaneyfelt, P. S. Winokur (SNL), and R. A. B. Devine (France Telecom/CNET), “Nonuniform Oxide Charge and Paramagnetic Interface Traps in High-Temperature Annealed Si/SiO2/Si Structures”, Appl. Phys. Lett. 68, 2117-2119 (1996).

L. Lee, H. G. Parks, and R. D. Schrimpf, “Interpretation of Experimentally Observed C-t Responses for Copper Contaminated Devices,” Solid-State Electronics, vol. 39, pp. 369-373, 1996.

L.W. Massengill, “Cosmic and Terrestrial Single-Event Effects in Dynamic RAMs,” (invited), IEEE Trans. On Nuclear Science, vol. NS-43, no. 2, April 1996.

M. Allenspach, C. Dachs, G. H. Johnson, R. D. Schrimpf, E. Lorf�vre, J. M. Palau, J. R. Brews, K. F. Galloway, J. L. Titus, and C. F. Wheatley, “SEGR and SEB in N-Channel Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 43, pp. 2927-2931, 1996.

M. Allenspach, J. R. Brews, K. F. Galloway, G. H. Johnson, R. D. Schrimpf, R. L. Pease, J. L. Titus, and C. F. Wheatley, “SEGR: A Unique Failure Mode for Power MOSFETs in Spacecraft,” Microelectron. Reliab., vol. 36, pp. 1871-1874, 1996.

M. R. Shaneyfelt, P. S. Winokur, D. M. Fleetwood, J. R. Schwank, and R. A. Reber, Jr. (SNL), “Effects of Reliability Screens on Charge Trapping”, IEEE Trans. Nucl. Sci. 43, 865-872 (1996).

R. D. Schrimpf, “Recent Advances in Understanding Total-Dose Effects in Bipolar Transistors,” IEEE Trans. Nucl. Sci., vol. 43, pp. 787-796, 1996.

S. C. Witczak, K. F. Galloway, R. D. Schrimpf, J. L. Titus, J. R. Brews, and G. Prevost, “The Determination of Si-SiO2 Interface Trap Density in Irradiated Four-Terminal VDMOSFETs Using Charge Pumping,” IEEE Trans. Nucl. Sci., vol. 43, pp. 2558-2564, 1996.

S. C. Witczak, R. D. Schrimpf, K. F. Galloway, D. M. Fleetwood, R. L. Pease, J. M. Puhl, D. M. Schmidt, W. E. Combs, and J. S. Suehle, “Accelerated Tests for Simulating Low Dose Rate Gain Degradation of Lateral and Substrate PNP Bipolar Junction Transistors,” IEEE Trans. Nucl. Sci., vol. 43, pp. 3151-3160, 1996.

W. L. Warren, K. Vanheusden, D. M. Fleetwood, J. R. Schwank, M. R. Shaneyfelt, P. S. Winokur (SNL), and R. A. B. Devine (France Telecom/CNET), “A Proposed Model for Positive Charge in SiO2 Thin Films: Over-Coordinated Oxygen Centers”, IEEE Trans. Nucl. Sci. 43, 2617-2626 (1996).

W. L. Warren, K. Vanheusden, J. R. Schwank, D. M. Fleetwood, P. S. Winokur (SNL), and R. A. B. Devine (France Telecom/CNET), “Mechanism for Anneal-Induced Interfacial Charging in SiO2 Thin Films on Si”, Appl. Phys. Lett. 68, 2993-2995 (1996).