C. J. Rawn, M. N. Orr, R. N. Vogt, D. P. Birnie, III, and R. D. Schrimpf, “Effect of RuOx Bottom Electrode Annealing Temperature on Sol-Gel Derived PZT Capacitors,” Integrated Ferroelectrics, vol. 7, pp. 309, 1995.

C.J. Rawn, E.A. Kneer, D.P. Birnie, III, M.N. Orr, R.D. Schrimpf, and G. Teowee, “Influence of Ti Interfacial Layers on the Electrical and Microstructural Properties of Sol-Gel Prepared PZT Films,” Integrated Ferroelectrics, vol. 6, pp. 111-119, 1995.

D. M. Fleetwood, W. L. Warren, J. R. Schwank, P. S. Winokur, M. R. Shaneyfelt, and L. C. Riewe (SNL), “Effects of Interface Traps and Border Traps on MOS Postirradiation Annealing Response”, IEEE Trans. Nucl. Sci. 42, 1698-1707 (1995). Outstanding Conference Paper Award, 1995 IEEE Nuclear and Space Radiation Effects Conference.

D. M. Fleetwood, W. L. Warren, M. R. Shaneyfelt (SNL), R. A. B. Devine (France Telecom/CNET), and J. H. Scofield (Oberlin College), “Enhanced MOS 1/f Noise due to Near-Interfacial Oxygen Deficiency”, J. Non-Crystalline Solids 187, 199-205 (1995) [Invited].

D. M. Fleetwood, M. R. Shaneyfelt, W. L. Warren, J. R. Schwank, T. L. Meisenheimer, and P. S. Winokur (SNL), “Border Traps: Issues for MOS Radiation Response and Long-Term Reliability”,Microelectronics and Reliability 35, 403-428 (1995) [Invited].

D.M. Schmidt, D.M. Fleetwood, R.D. Schrimpf, R.L. Pease, R.J. Graves, G.H. Johnson, K.F. Galloway, and W.E. Combs, “Comparison of Ionizing-Radiation-Induced Gain Degradation in Lateral, Substrate, and Vertical PNP BJTs,” IEEE Trans. Nucl. Sci., vol. 42, pp. 1541-1549, 1995.

F.K. Chai, S.L. Kosier, R.D. Schrimpf, and K.F. Galloway, “A Method for Predicting Breakdown Voltage of Power Devices with Cylindrical Diffused Junctions,” Solid-State Electronics, vol. 38, pp. 1547-1549, 1995.

F.K. Chai, J.R. Brews, R.D. Schrimpf, and D.P. Birnie, III, “Limitations of the Uniform Effective Field Approximation Due to Doping of Ferroelectric Thin Film Capacitors,” J. Appl. Phys., vol. 78, pp. 4766-4775, 1995.

J.L. Titus, C.F. Wheatley, D.I. Burton, I. Mouret, M. Allenspach, J. Brews, R. Schrimpf, K. Galloway, and R.L. Pease, “Impact of Oxide Thickness on SEGR Failure in Vertical Power MOSFETS; Development of a Semi-Empirical Expression,” IEEE Trans. Nucl. Sci., vol. 42, pp. 1928-1934, 1995.

J.L. Titus, C.F. Wheatley, D.I. Burton, I. Mouret, M. Allenspach, J. Brews, R. Schrimpf, K. Galloway, and R.L. Pease, “Impact of Oxide Thickness on SEGR Failure in Vertical Power MOSFETS; Development of a Semi-Empirical Expression,” IEEE Trans. Nucl. Sci., vol. 42, pp. 1928-1934, 1995.

J.R. Schifko, E.A. Kneer, D.P. Birnie, III, R.D. Schrimpf, and G. Teowee, “Passivation of Ferroelectric PZT Capacitors Using Spin-On Glass,” Integrated Ferroelectrics, vol. 6, pp. 121 128, 1995.

M. Allenspach, I. Mouret, J.L. Titus, C.F. Wheatley, Jr., R.L. Pease, J.R. Brews, R.D. Schrimpf, and K.F. Galloway, “Single-Event Gate-Rupture in Power MOSFETs: Prediction of Breakdown Biases and Evaluation of Oxide Thickness Dependence,” IEEE Trans. Nucl. Sci., vol. 42, pp. 1922-1927, 1995.

M. Allenspach, I. Mouret, J.L. Titus, C.F. Wheatley, Jr., R.L. Pease, J.R. Brews, R.D. Schrimpf, and K.F. Galloway, “Single-Event Gate-Rupture in Power MOSFETs: Prediction of Breakdown Biases and Evaluation of Oxide Thickness Dependence,” IEEE Trans. Nucl. Sci., vol. 42, pp. 1922-1927, 1995.

R.D. Schrimpf, R.J. Graves, D.M. Schmidt, D.M. Fleetwood, R.L. Pease, W.E. Combs, and M. DeLaus, “Hardness Assurance Issues for Lateral PNP Bipolar Junction Transistors,” IEEE Trans. Nucl. Sci., vol. 42, pp. 1641-1649, 1995.

R.D. Schrimpf, R.J. Graves, D.M. Schmidt, D.M. Fleetwood, R.L. Pease, W.E. Combs, and M. DeLaus, “Hardness Assurance Issues for Lateral PNP Bipolar Junction Transistors,” IEEE Trans. Nucl. Sci., vol. 42, pp. 1641-1649, 1995. Meritorious Conference Paper Award, 1995 IEEE Nuclear and Space Radiation Effects Conference.

S.C. Witczak, K.F. Galloway, R.D. Schrimpf, and J.S. Suehle, “Relaxation of Si-SiO2 Interfacial Stress in Bipolar Screen Oxides due to Ionizing Radiation,” IEEE Trans. Nucl. Sci., vol. 42, pp. 1689-1697, 1995.

S.L. Kosier, A. Wei, R.D. Schrimpf, D.M. Fleetwood, M. DeLaus, R.L. Pease, and W.E. Combs, “Physically Based Comparison of Hot-Carrier-Induced and Ionizing-Radiation-Induced Degradation in BJTs,” IEEE Trans. Electron Devices, vol. 42, pp. 436-444, 1995.

S.R. Anderson, R.D. Schrimpf, K.F. Galloway, and J.L. Titus, “Exploration of Heavy Ion Irradiation Effects on Gate Oxide Reliability in Power Devices,” Microelectron. Reliab., vol. 35, pp. 603-608, 1995.

W. L. Warren, M. R. Shaneyfelt, D. M. Fleetwood, P. S. Winokur, and S. Montague (SNL), “Electron and Hole Trapping in Doped Oxides”, IEEE Trans. Nucl. Sci. 42, 1731-1739 (1995).

W. L. Warren, M. R. Shaneyfelt, D. M. Fleetwood, and P. S. Winokur (SNL), “Nature of Defect Centers in B- and P-Doped SiO2 Thin Films”, Appl. Phys. Lett. 67, 995-997 (1995).