D. M. Fleetwood, T. L. Meisenheimer (SNL), and J. H. Scofield (Oberlin College), “1/f Noise and Radiation Effects in MOS Devices”, IEEE Trans. Electron Dev. 41, 1953-64 (1994). [Invited].

D. M. Fleetwood, M. R. Shaneyfelt, and J. R. Schwank (SNL), “Estimating Oxide-Trap, Interface-Trap, and Border-Trap Charge Densities in MOS Transistors”, Appl. Phys. Lett. 64, 1965-67 (1994).

D. M. Fleetwood, P. S. Winokur (SNL), C. E. Barnes, and D. C. Shaw (JPL), “Accounting for Time-Dependent Effects on CMOS Total-Dose Response in Space Environments”, Radiat. Phys. Chem. 43, 129-38 (1994). [Invited]

D. Zupac, S.R. Anderson, R.D. Schrimpf, and K.F. Galloway, “Determining the Drain Doping in DMOS Transistors Using the Hump in the Leakage Current,” IEEE Trans. Electron Devices, vol. 41, pp. 2326-2336, 1994.

D.M. Fleetwood, S.L. Kosier, R.N. Nowlin, R.D. Schrimpf, R.A. Reber, Jr., M. DeLaus, P.S. Winokur, A. Wei, W.E. Combs, and R.L. Pease, “Physical Mechanisms Contributing to Enhanced Bipolar Gain Degradation at Low Dose Rates,” IEEE Trans. Nucl. Sci., vol. 41, pp. 1871-1883, 1994.

G.H. Johnson, W.T. Kemp, R.D. Schrimpf, K.F. Galloway, M.R. Ackermann, and R.D. Pugh, “The Effects of Ionizing Radiation on Commercial Power MOSFETs Operated at Cryogenic Temperatures,” IEEE Trans. Nucl. Sci., vol. 41, pp. 2530-2535, 1994.

G.R. Agrwal, L.W. Massengill, and K. Gulati, “A Proposed SEU Tolerant Dynamic Random Access Memory Cell,” IEEE Trans. on Nuclear Science, vol NS-41, no. 6, Dec. 1994.

H.G. Parks, R.D. Schrimpf, R. Craigin, R. Jones, and P. Resnick, “Quantifying the Impact of Homogeneous Metal Contamination Using Test Structure Metrology and Device Modeling,” IEEE Trans. Semic. Manufacturing, vol. 7, pp. 249-258, 1994.

I. Mouret, M. Allenspach, R.D. Schrimpf, J.R. Brews, K.F. Galloway, and P. Calvel, “Temperature and Angular Dependence of Substrate Response in SEGR,” IEEE Trans. Nucl. Sci., vol. 41, pp. 2216-2221, 1994.

J. H. Scofield, N. Borland (Oberlin College), and D. M. Fleetwood (SNL), “Reconciliation of Different Gate-Voltage Dependencies of 1/f Noise in n-MOS and p-MOS Transistors”, IEEE Trans. Electron Dev. 41, 1946-52 (1994).

K. Gulati, L.W. Massengill, and G.R. Agrwal, “Single Event Mirroring and DRAM Sense Amplifier Designs for Improved Single-Event Upset Performance,” IEEE Trans. on Nuclear Science, vol NS-41, no. 6, Dec. 1994.

M. Allenspach, J.R. Brews, I. Mouret, R.D. Schrimpf, and K.F. Galloway, “Evaluation of SEGR Threshold in Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 41, pp. 2160-2166, 1994.

M. R. Shaneyfelt, D. M. Fleetwood, J. R. Schwank, T. L. Meisenheimer, and P. S. Winokur (SNL), “Effects of Burn-in on Radiation Hardness”, IEEE Trans. Nucl. Sci. 41, 2550-2559 (1994). Meritorious Conference Paper Award, 1994 IEEE Nuclear and Space Radiation Effects Conference (tie).

M.D. Ploor, R.D. Schrimpf, and K.F. Galloway, “Investigation of Possible Sources of 1/f Noise in Irradiated n-Channel Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 41, pp. 1902-1906, 1994.

N. S. Saks (NRL), M. Simons (Research Triangle Institute), D. M. Fleetwood (SNL), J. T. Yount, P. M. Lenahan (Penn St. Univ.), and R. B. Klein (SFA), “Radiation Effects in Oxynitrides Grown in N2O”, IEEE Trans. Nucl. Sci. 41, 1854-1863 (1994).

P. Khosropour, D.M. Fleetwood, K.F. Galloway, R.D. Schrimpf, and P. Calvel, “Evaluation of a Method for Estimating Low-Dose-Rate Irradiation Response of MOSFETs,” IEEE Trans. Nucl. Sci., vol. 41, pp. 2560-2566, 1994.

P. Khosropour, K.F. Galloway, D. Zupac, R.D. Schrimpf, and P. Calvel, “Application of Test Method 1019.4 to Non-Hardened Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 41, pp. 555 560, 1994.

P. L. Dreike, D. M. Fleetwood, D. B. King, D. C. Sprauer, and T. E. Zipperian, “An Overview of High Temperature Electronic Device Technologies and Potential Applications”, IEEE Trans. Comp., Packaging, and Manuf. Technol. 17(A), 594-609 (1994).

P. S. Winokur, M. R. Shaneyfelt, T. L. Meisenheimer, and D. M. Fleetwood (SNL), “Advanced Qualification Techniques”, IEEE Trans. Nucl. Sci., 41, No. 3, 538-548 (1994). [Invited]

P. S. Winokur, D. M. Fleetwood, and F. W. Sexton (SNL), “Radiation-Hardened Microelectronics for Space Applications”, Radiat. Phys. Chem. 43, 175-90 (1994). [Invited]

R. A. B. Devine (France Telecom/CNET), W. L. Warren, M. R. Shaneyfelt, D. M. Fleetwood (SNL), and B. Aspar (France Telecom/CNET), “Oxide Modification Due to High-Temperature Processing of Si/SiO2/Si Structures”, Nucl. Instrum. Meth. B 84, 254-257 (1994).

R.L. Pease, S.L. Kosier, R.D. Schrimpf, W.E. Combs, M. Davey, M. DeLaus, and D.M. Fleetwood, “Comparison of Hot-Carrier and Radiation Induced Increases in Base Current in Bipolar Transistors,” IEEE Trans. Nucl. Sci., vol. 41, pp. 2567-2573, 1994.

R.N. Nowlin, D.M. Fleetwood, and R.D. Schrimpf, “Saturation of the Dose-Rate Response of BJTs Below 10 rad(SiO2)/s: Implications for Hardness Assurance,” IEEE Trans. Nucl. Sci., vol. 41, pp. 2637-2641, 1994.

S. Velacheri, L.W. Massengill, and S.E. Kerns, “Single-Event-Induced Charge Collection and Direct Channel Conduction in Submicron MOSFETs,” IEEE Trans. on Nuclear Science, vol NS-41, no. 6, Dec. 1994.

S.C. Lee, G. Teowee, R.D. Schrimpf, D.P. Birnie, III, D.R. Uhlmann, and K.F. Galloway, “An I V Measurement Method and Its Application for Characterizing Ferroelectric PZT Thin Films,” Integrated Ferroelectrics, vol. 4, pp. 31-43, 1994.

S.C. Witczak, S.L. Kosier, R.D. Schrimpf, and K.F. Galloway, “Synergetic Effects of Radiation Stress and Hot-Carrier Stress on the Current Gain of NPN Bipolar Junction Transistors,” IEEE Trans. Nucl. Sci., vol. 41, pp. 2412-2419, 1994.

S.L. Kosier, A. Wei, M.A. Shibib, R.D. Schrimpf, J.C. Desko, and K.F. Galloway, “Comparison of Termination Methods for Low-Voltage, Vertical Integrated Power Devices,” Solid-State Electronics, vol. 37, pp. 1611-1617, 1994.

S.L. Kosier, W.E. Combs, A. Wei, R.D. Schrimpf, D.M. Fleetwood, M. DeLaus, and R.L. Pease, “Bounding the Total-Dose Response of Modern Bipolar Transistors,” IEEE Trans. Nucl. Sci., vol. 41, pp. 1864-1870, 1994.

S.M.Y. Hasan, S.L. Kosier, R.D. Schrimpf, and K.F. Galloway, “Effect of Neutron Irradiation on the Breakdown Voltage of Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 41, pp. 2719-2726, 1994.

S.R. Anderson, D. Zupac, R.D. Schrimpf, and K.F. Galloway, “The Surface Generation Hump in Irradiated Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 41, pp. 2443-2451, 1994.

W. L. Warren, M. R. Shaneyfelt, D. M. Fleetwood, J. R. Schwank, P. S. Winokur (SNL), and R. A. B. Devine (France Telecom/CNET), “Microscopic Nature of Border Traps in MOS Oxides”, IEEE Trans. Nucl. Sci. 41, 1817-1827 (1994).

W. L. Warren, D. M. Fleetwood, M. R. Shaneyfelt, P. S. Winokur (SNL), and R. A. B. Devine (France Telecom/CNET), “Defect-Defect Hole Transfer and the Identity of Border Traps in SiO2 Films”, Phys. Rev. B 50, 14710-713 (1994).

W. L. Warren, D. M. Fleetwood, M. R. Shaneyfelt, J. R. Schwank, P. S. Winokur (SNL), R. A. B. Devine, and D. Mathiot (France Telecom/CNET), “Links Between Oxide Traps, Interface Traps, and Border Traps in High-Temperature Annealed Si/SiO2 Systems”, Appl. Phys. Lett. 64, 3452-54 (1994).

W. L. Warren, D. M. Fleetwood, J. R. Schwank, M. R. Shaneyfelt, P. S. Winokur (SNL), R. A. B. Devine (France Telecom/CNET), and W. P. Maszara (Allied-Signal), “Shallow Oxygen-Related Donors in Bonded and Etchback Silicon-on-Insulator Structures”, Appl. Phys. Lett. 64, 508-510 (1994).