D. M. Fleetwood, P. S. Winokur, R. A. Reber, Jr., T. L. Meisenheimer, J. R. Schwank, M. R. Shaneyfelt, and L. C. Riewe (SNL), “Effects of Oxide Traps, Interface Traps, and Border Traps on Metal-Oxide-Semiconductor Devices”, J. Appl. Phys. 73, 5058-74 (1993).

D. Zupac, R.D. Schrimpf, and K.F. Galloway, “ESD Effects in Power MOSFETs: A Review,” Microelectronics J., vol. 24, pp. 125-138, 1993.

D. Zupac, D. Pote, R.D. Schrimpf, and K.F. Galloway, “Annealing of ESD-Induced Damage in Power MOSFETs,” J. Electrostatics, vol. 31, pp. 131-144, 1993.

D. Zupac, K.F. Galloway, R.D. Schrimpf, and P. Augier, “Radiation-Induced Mobility Degradation in p-Channel Double-Diffused Metal-Oxide-Semiconductor Power Transistors at 300 K and 77 K,” J. Appl. Phys., vol. 73, pp. 2910-2915, 1993.

D. Zupac, K.F. Galloway, P. Khosropour, S.R. Anderson, R.D. Schrimpf, and P. Calvel, “Separation of Effects of Oxide-Trapped Charge and Interface-Trapped Charge on Mobility in Irradiated Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 40, pp. 1307-1315, 1993.

G.H. Johnson, J.H. Hohl, R.D. Schrimpf, and K.F. Galloway, “Simulating Single-Event Burnout of N-Channel Power MOSFETs,” IEEE Trans. Electron Devices, vol. 40, pp. 1001-1008, 1993.

J. R. Schwank, D. M. Fleetwood, M. R. Shaneyfelt, and P. S. Winokur (SNL), “A Critical Comparison of Charge-Pumping, Dual-Transistor, and Midgap Measurement Techniques”, IEEE Trans. Nucl. Sci. 40, 1666-1677 (1993).

J.L. Todsen, P. Augier, R.D. Schrimpf, and K.F. Galloway, “1/f Noise and Interface Trap Density in High Field Stressed pMOS Transistors,” Electronics Lett., vol. 29, pp. 696-697, 1993.

J.R. Brews, M. Allenspach, R.D. Schrimpf, K.F. Galloway, J.L. Titus, and C.F. Wheatley, “A Conceptual Model of Single-Event Gate Rupture in Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 40, pp. 1959-1966, 1993.

L.W. Massengill, M.L. Alles, S.E. Kerns, and K.L. Jones, “Effects of Process Parameter Distributions and Ion Strike Locations on SEU Cross-Section Data,” IEEE Trans on Nuclear Science, vol NS-40, no. 6, Dec. 1993.

M. R. Shaneyfelt, D. M. Fleetwood, P. S. Winokur, J. R. Schwank, and T. L. Meisenheimer (SNL), “Effects of Device Scaling and Geometry on MOS Radiation Hardness Assurance”, IEEE Trans. Nucl. Sci. 40, 1678-1685 (1993).

R. A. B. Devine, D. Mathiot (France Telecom/CNET), W. L. Warren, D. M. Fleetwood (SNL), and B. Aspar (France Telecom/CNET), “Point Defect Generation and Oxide Degradation During Annealing of the Si/SiO2 Interface”, Appl. Phys. Lett. 63, 2926-28 (1993).

R.J. Milanowski, M.P. Pagey, A.I. Matta, B.L. Bhuva, L.W. Massengill, and S.E. Kerns, “Combined Effects of X-Irradiation and Forming Gas Anneal on the Hot-Carrier Response of MOS Oxides,” IEEE Trans on Nuclear Science, vol NS-40, no. 6, Dec. 1993.

R.N. Nowlin, D.M. Fleetwood, R.D. Schrimpf, R.L. Pease, and W.E. Combs, “Hardness Assurance and Testing Issues for Bipolar/BiCMOS Devices,” IEEE Trans. Nucl. Sci., vol. 40, pp. 1686-1693, 1993.

S. L. Miller, D. M. Fleetwood, P. J. McWhorter, R. A. Reber, Jr., and J. R. Murray (SNL), “A General Centroid Determination Methodology, with Application to Multilayer Dielectric Structures and Thermally Stimulated Current Measurements”, J. Appl. Phys. 74, 5068-5077 (1993).

S.L. Kosier, R.D. Schrimpf, R.N. Nowlin, D.M. Fleetwood, M. DeLaus, R.L. Pease, W.E. Combs, A. Wei, and F. Chai, “Charge Separation for Bipolar Transistors,” IEEE Trans. Nucl. Sci., vol. 40, pp. 1276-1285, 1993.

T. Stellwag Mayer (Purdue/Penn St. Univ.), D. M. Fleetwood, D. E. Beutler (SNL), J. A. Cooper, and M. R. Melloch (Purdue Univ.), “Unexpected Increase in the Thermal Generation Rate of Bulk GaAs Due to Electron-Beam Metallization”, IEEE Trans. Nucl. Sci. 40, 1293-1299 (1993).

W. L. Warren, M. R. Shaneyfelt, J. R. Schwank, D. M. Fleetwood, P. S. Winokur (SNL), R. A. B. Devine (France Telecom/CNET), W. P. Maszara, and J. B. McKitterick (Allied-Signal), “Paramagnetic Defect Centers in Irradiated BESOI and SIMOX Buried Oxides”, IEEE Trans. Nucl. Sci. 40, 1755-1764 (1993).

W. L. Warren, J. R. Schwank, M. R. Shaneyfelt, D. M. Fleetwood, P. S. Winokur (SNL), W. P. Maszara, and J. B. McKitterick (Allied-Signal), “Radiation-Induced Defect Centers in Bonded and Etchback SOI Materials”, Microelectronic Engineering 22, 387-390 (1993).

W. L. Warren, D. M. Fleetwood, M. R. Shaneyfelt, J. R. Schwank, P. S. Winokur (SNL), and R. A. B. Devine (France Telecom/CNET), “Excess-Si Related Defect Centers in Buried SiO2 Thin Films”, Appl. Phys. Lett. 62, 3330-2 (1993).