G.H. Johnson, J.R. Brews, R.D. Schrimpf, and K.F. Galloway, “Analysis of the Time-Dependent Turn-On Mechanism for Single-Event Burnout of N-Channel Power MOSFETs,” in RADECS 93 Proc., pp. 441-445, 1993.

J. H. Scofield, N. Borland (Oberlin College), and D. M. Fleetwood (SNL), “Random Telegraph Signals in Small Gate-Area P-MOS Transistors, in Noise in Physical Systems and 1/f Fluctuations”, edited by P. H. Handel and A. L. Chung (American Institute of Physics Conference Proceedings 285, New York, 1993), pp. 386-9.

L. W. Massengill, “SEU Modeling and Simulation Techniques,” short course presentation at the 1993 IEEE Nuclear and Space Radiation Effects Conference, Snowbird, Utah. (Invited Presentation).

L.W. Massengill, M.L. Alles, and S.E. Kerns, “SEU Error Rates in Advanced Digital CMOS,” Second European Conf. on Radiation and its Effects on Components and Systems (RADECS), Saint-Malo, France, Sept. 1993.

P. Khosropour, K.F. Galloway, D. Zupac, R.D. Schrimpf, and P. Calvel, “Application of Test Method 1019.4 to Non-Hardened Power MOSFETs,” in RADECS 93 Proc., pp. 300-305, 1993.

S.L. Kosier, R.D. Schrimpf, A. Wei, M. DeLaus, D.M. Fleetwood, and W.E. Combs, “Effects of Oxide Charge and Surface Recombination Velocity on the Excess Base Current of BJTs,” in Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 211-214, 1993.