D. M. Fleetwood, S. L. Miller, R. A. Reber, Jr., P. J. McWhorter, P. S. Winokur, M. R. Shaneyfelt, and J. R. Schwank (SNL), “New Insights Into Radiation-Induced Oxide-Trap Charge Through Thermally-Stimulated-Current Measurement and Analysis”, IEEE Trans. Nucl. Sci. 39, 2192-2203 (1992).

D. M. Fleetwood (SNL), “Long-Term Annealing Study of Midgap Charge Neutrality”, Appl. Phys. Lett. 60, 2883-5 (1992).

D. M. Fleetwood, R. A. Reber, Jr., and P. S. Winokur (SNL), “Trapped-Hole Annealing and Electron Trapping in Metal-Oxide-Semiconductor Devices”, Appl. Phys. Lett, 60, 2008-10 (1992).

D. M. Fleetwood, “Border Traps in MOS Devices,” IEEE Trans. Nucl. Sci. 39, No. 2, 269-71 (1992).

D. Zupac, K.F. Galloway, R.D. Schrimpf, and P. Augier, “Effects of Radiation-Induced Oxide Trapped Charge on Inversion-Layer Hole Mobility at 300 and 77 K,” Appl. Phys. Lett., vol. 60, pp. 3156-3158, 1992.

D. Zupac, K.W. Baum, R.D. Schrimpf, and K.F. Galloway, “Detection of ESD-Induced Noncatastrophic Damage in P-Channel Power MOSFETs,” J. Electrostatics, vol. 28, pp. 241 252, 1992.

F. W. Sexton, D. M. Fleetwood, C. C. Aldridge, G. Garrett, J. C. Pelletier, and J. I. Gaona (SNL), “Qualifying Commercial ICs for Space Total-Dose Environments”, IEEE Trans. Nucl. Sci. 39, 1869-75 (1992).

G.H. Johnson, R.D. Schrimpf, K.F. Galloway, and R. Koga, “Temperature Dependence of Single-Event Burnout in N-Channel Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 39, pp. 1605-1612, 1992.

J. R. Schwank, D. M. Fleetwood, M. R. Shaneyfelt, P. S. Winokur, C. L. Axness, and L. C. Riewe (SNL), “Latent Interface-Trap Buildup and Its Implications for Hardness Assurance”, IEEE Trans. Nucl. Sci. 39, 1953-63 (1992).

J. R. Schwank, D. M. Fleetwood, M. R. Shaneyfelt, and P. S. Winokur (SNL), “Latent Thermally Activated Interface-Trap Generation in MOS Devices”, IEEE Electron Dev. Lett. 13, 203-5 (1992).

L.W. Massengill and D.B. Mundie, “An Analog Neural Harware Implementation Using Charge-Injection Multipliers and Neuron-Specific Gain Control,” IEEE Trans. on Neural Networks, vol. 3, no. 3, May 1992.

M. R. Shaneyfelt, J. R. Schwank, D. M. Fleetwood, P. S. Winokur, K. L. Hughes, G. L. Hash, and M. Connors (SNL), “Interface-Trap Buildup Rates in Wet and Dry Oxides”, IEEE Trans. Nucl. Sci. 39, 2244-51 (1992).

P. Augier, J.L. Todsen, D. Zupac, R.D. Schrimpf, K.F. Galloway, and J.A. Babcock, “Comparison of 1/f Noise in Irradiated Power MOSFETs Measured in the Linear and Saturation Regions,” IEEE Trans. Nucl. Sci., vol. 39, pp. 2012-2017, 1992.

R. A. Reber, Jr. and D. M. Fleetwood (SNL), “Thermally-Stimulated-Current Measurements of SiO2 Defect Density and Energy in Irradiated Metal-Oxide-Semiconductor Capacitors”, Rev. Sci. Instrum. 63, 5714-25 (1992).

R.N. Nowlin, E.W. Enlow, R.D. Schrimpf, and W.E. Combs, “Trends in the Total-Dose Response of Modern Bipolar Transistors,” IEEE Trans. Nucl. Sci., vol. 39, pp. 2026-2035, 1992.

S. L. Miller, D. M. Fleetwood, and P. J. McWhorter (SNL), “Determining the Energy Distribution of Traps in Insulating Thin Films Using the Thermally Stimulated Current Technique”, Phys. Rev. Lett. 69, 820-3 (1992).

S.C. Lee, G. Teowee, R.D. Schrimpf, D.P. Birnie, III, D.R. Uhlmann, and K.F. Galloway, “Total-Dose Radiation Effects on Sol-Gel Derived PZT Thin Films,” IEEE Trans. Nucl. Sci., vol. 39, pp. 2036-2043, 1992.

W. L. Warren, J. R. Schwank, M. R. Shaneyfelt, D. M. Fleetwood, and P. S. Winokur (SNL), “Hydrogen Interactions with Delocalized Spin Centers in Buried SiO2 Thin Films”, Appl. Phys. Lett. 62, 1661-3 (1993).