D. M. Fleetwood, R. A. Reber, Jr., and P. S. Winokur (SNL), “Effect of Bias on Thermally Stimulated Current (TSC) in Irradiated MOS Devices”, IEEE Trans. Nucl. Sci. 38, 1066-77 (1991).

D. M. Fleetwood, P. S. Winokur, and T. L. Meisenheimer (SNL), Hardness Assurance for Low-Dose Space Applications”, IEEE Trans. Nucl. Sci. 38, 1552-59 (1991).

D. Zupac, K.W. Baum, S.L. Kosier, R.D. Schrimpf, and K.F. Galloway, “Comparison Between the Effects of Positive Noncatastrophic HBM ESD Stress in n-Channel and p-Channel Power MOSFETs,” IEEE Electron Device Letters, vol. EDL-12, pp. 546-549, 1991.

D.B. Mundie and L.W. Massengill, “Weight Decay and Resolution Effects in Feedforward Artificial Neural Networks,” IEEE Trans. on Neural Networks, vol. 2, no. 1, Jan 1991.

E.W. Enlow, R.L. Pease, W.E. Combs, R.D. Schrimpf, and R.N. Nowlin, “Response of Advanced Bipolar Processes to Ionizing Radiation,” IEEE Trans. Nucl. Sci., vol. NS-38, pp. 1342-1351, 1991.

H. Lendenmann, R.D. Schrimpf, and A.D. Bridges, “Novel Test Structure for the Measurement of Electrostatic Discharge Pulses,” IEEE Trans. Semiconductor Manufacturing, vol. 4, pp. 213 218, 1991.

J. H. Scofield (Oberlin College) and D. M. Fleetwood (SNL), “Physical Basis for Nondestructive Tests of MOS Radiation Hardness”, IEEE Trans. Nucl. Sci. 38, 1567-77 (1991).

J. H. Scofield, M. Trawick, P. Klimecky (Oberlin College), and D. M. Fleetwood (SNL), “Correlation Between Preirradiation Channel Mobility and Radiation-Induced Interface Trap Charge in Metal-Oxide-Semiconductor Transistors”, Appl. Phys. Lett. 58, 2782-84 (1991).

J.A. Babcock, J.L. Titus, R.D. Schrimpf, and K.F. Galloway, “Effects of Ionizing Radiation on the Noise Properties of DMOS Power Transistors,” IEEE Trans. Nucl. Sci., vol. NS-38, pp. 1304-1309, 1991.

J.L. Titus, G.H. Johnson, R.D. Schrimpf, and K.F. Galloway, “Single Event Burnout of Power Bipolar Junction Transistors,” IEEE Trans. Nucl. Sci., vol. NS-38, pp. 1315-1322, 1991.

L.W. Massengill, “SEU-Hardened Resistive-Load Static RAMs,” IEEE Trans. on Nuclear Science, vol. NS-38, no. 6, Dec. 1991.

L.W. Massengill, “A Dynamic CMOS Multiplier for Analog VLSI Based on Exponential Pulse-Decay Modulation,” IEEE Journal of Solid State Circuits, March, 1991.

M. R. Shaneyfelt, D. M. Fleetwood, J. R. Schwank, and K. L. Hughes (SNL), “Charge Yield for 10-keV X-ray and Cobalt-60 Irradiation of MOS Devices”, IEEE Trans. Nucl. Sci. 38, 1187-94 (1991).

M. R. Shaneyfelt, K. L. Hughes, J. R. Schwank, F. W. Sexton, D. M. Fleetwood, P. S. Winokur (SNL), and E. W. Enlow (Mission Research Corporation), “Wafer-Level Radiation Testing for Hardness Assurance”, IEEE Trans. Nucl. Sci. 38, 1598-1605 (1991).

M.L. Alles, S.E. Kerns, L.W. Massengill, J.E. Clarck, K.L. Jones, “Body Tie Placement in CMOS/SOI Digital Circuits for Transient Radiation Environments,” IEEE Trans. on Nuclear Science, vol NS-38, no. 6, Dec.1991.

P. A. Miller, D. M. Fleetwood, and W. K. Schubert (SNL), “Damage Due to Electron, Ion, and X-ray Lithography”, J. Appl. Phys. 69, 488-94 (1991).

S.L. Kosier, R.D. Schrimpf, K.F. Galloway, and F.E. Cellier, “Predicting Worst-Case Charge Buildup in Power-Device Field Oxides,” IEEE Trans. Nucl. Sci., vol. NS-38, pp. 1383-1390, 1991.

T. J. Garino, C. A. Reber, and D. M. Fleetwood, “Ceramic Coatings on Package Lids for Radiation Protection,” SAND91-0301, UC-704, available through NTIS (August 1991).

T. L. Meisenheimer, D. M. Fleetwood, M. R. Shaneyfelt, and L. C. Riewe (SNL), “1/f Noise in N- and P-Channel MOS Devices Through Irradiation and Annealing”, IEEE Trans. Nucl. Sci. 38, 1297-1303 (1991).