D. E. Beutler, W. Beezhold, J. S. Browning, D. M. Fleetwood, N. E. Counts, D. P. Knott, C. L. Freshman, and M. P. Connors (SNL), “Comparison of Photocurrent Enhancement and Upset Enhancement in CMOS Devices in a Medium-Energy X-Ray Environment”, IEEE Trans. Nucl. Sci. 37, No. 4, 1541-7 (1990).

D. M. Fleetwood (SNL) and J. H. Scofield (Oberlin College), “Evidence that Similar Point Defects Cause 1/f Noise and Radiation-Induced-Hole Trapping in Metal-Oxide-Semiconductor Devices”, Phys. Rev. Lett. 64, 579-82 (1990).

D. M. Fleetwood (SNL), “Radiation-Induced Charge Neutralization and Interface-Trap Buildup in Metal-Oxide-Semiconductor Devices”, J. Appl. Phys. 67, 580-3 (1990).

D. M. Fleetwood, P. S. Winokur, and L. C. Riewe (SNL), “Predicting Switched-Bias Response from Steady-State Irradiations”, IEEE Trans. Nucl. Sci. 37, 1806-17 (1990).

D. Zupac, K.W. Baum, W. Weber, R.D. Schrimpf, and K.F. Galloway, “ESD Effects on the Radiation Response of Power VDMOS Transistors,” in EOS/ESD Symp. Proc., pp. 137-142, 1990.

H. Lendenmann, R.D. Schrimpf, and A.D. Bridges, “Novel Test Structure for the Measurement of Electrostatic-Discharge Pulses,” in Proc. IEEE Int. Conf. on Microelectronic Test Structures, pp. 149-153, 1990.

K.F. Galloway and R.D. Schrimpf, “MOS Device Degradation Due to Total-Dose Ionizing Radiation in the Natural Space Environment: A Review,” Microelectronics J., vol. 21, pp. 67 81, 1990.

L.W. Massengill, D.V. Kerns, S.E. Kerns, and M.L. Alles, “Single-Event Charge Enhancement in SOI Devices,” IEEE Electron Device Letters, vol. EDL-11, no. 2, February, 1990.

M. I. Landstrass (Crystallume) and D. M. Fleetwood (SNL), “Total Dose Radiation Hardness of Diamond-Based Silicon-on-Insulator Structures”, Appl. Phys. Lett. 56, 2316-8 (1990).

M. R. Shaneyfelt, J. R. Schwank, D. M. Fleetwood, P. S. Winokur, K. L. Hughes, and F. W. Sexton (SNL), “Field Dependence of Interface-Trap Buildup in Polysilicon and Metal Gate MOS Devices”, IEEE Trans. Nucl. Sci. 37, 1632-40 (1990).

N.V. Barbara, R.D. Schrimpf, and W.J. Kerwin, “Ionizing-Radiation-Induced Degradation in Electronic Power Amplifiers,” in Conf. Record of the 1990 IEEE Ind. Appl. Soc. Annual Meeting, pp. 1667-1672, 1990.

P. S. Winokur, F. W. Sexton, D. M. Fleetwood, M. D. Terry, M. R. Shaneyfelt, P. V. Dressendorfer, and J. R. Schwank (SNL), “Implementing QML for Radiation Hardness Assurance”, IEEE Trans. Nucl. Sci. 37, 1794-1805 (1990).

P.J. Wahle, R.D. Schrimpf, and K.F. Galloway, “Simulated Space Radiation Effects on Power MOSFETs in Switching Power Supplies,” IEEE Trans. Ind. Appl., vol. IA-26, pp. 798-802, 1990.

R.D. Schrimpf, S.C. Lee, K.F. Galloway, S.L. Rainwater, and J.P. Retzler, “Circumvention-Hardened Field-Effect Transistors,” in Government Microcircuit Applications Conference Digest of Papers, pp. 439-442, 1990.

S.L. Kosier, R.D. Schrimpf, F.E. Cellier, and K.F. Galloway, “The Effects of Ionizing Radiation on the Breakdown Voltage of P-Channel Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. NS-37, pp. 2076-2082, 1990.

S.L. Kosier, D. Zupac, R.D. Schrimpf, F.E. Cellier, K.F. Galloway, M.N. Darwish, C.A. Goodwin, and M.C. Dolly, “Optimization of a Two-Level Field Plate Termination Structure for Integrated-Power Applications in Ionizing Radiation Environments,” in Government Microcircuit Applications Conference Digest of Papers, pp. 435-438, 1990.

T. L. Meisenheimer and D. M. Fleetwood (SNL), “Effect of Radiation-Induced Charge on 1/f Noise in MOS Devices”, IEEE Trans. Nucl. Sci. 37, 1696-1702 (1990).

W. Weber, R.D. Schrimpf, R.G. Myers, A.F. Witulski, and K.F. Galloway, “Radiation-Induced Changes in Power MOSFET Gate-Charge Measurements,” in Conf. Rec. of the 1990 IEEE Ind. Appl. Soc. Annual Meeting, pp. 1673 1678, 1990.