D. M. Fleetwood, P. S. Winokur (SNL), C. M. Dozier, and D. B. Brown (NRL), “Effect of Bias on the Response of Metal-Oxide-Semiconductor Devices to Low-Energy X-ray and Cobalt-60 Irradiation”, Appl. Phys. Lett. 52, 1514-6 (1988).

D. M. Fleetwood, P. S. Winokur, and J. R. Schwank (SNL), “Using Laboratory X-ray and Co-60 Irradiations to Predict CMOS Device Response in Strategic and Space Environments”, IEEE Trans. Nucl. Sci. 35, 1497-1505 (1988). Outstanding Paper Award, 1988 Conference on Nuclear & Space Radiation Effects.

D. M. Fleetwood, S. S. Tsao, and P. S. Winokur (SNL), “Total Dose Hardness Assurance Issues for SOI MOSFETs”, IEEE Trans. Nucl. Sci. 35, 1361-7 (1988).

D. M. Fleetwood, D. E. Beutler, L. J. Lorence, Jr. (SNL), D. B. Brown (NRL), B. L. Draper, L. C. Riewe (SNL), H. B. Rosenstock (NRL), and D. P. Knott (SNL), “Comparison of Enhanced Device Response and Predicted X-ray Dose-Enhancement Effects on MOS Oxides”, IEEE Trans. Nucl. Sci. 35, 1265-71 (1988).

D. M. Fleetwood, F. V. Thome, S. S. Tsao, P. V. Dressendorfer, V. J. Dandini, and J. R. Schwank (SNL), “High-Temperature Silicon-on-Insulator Electronics for Space Nuclear Power Systems: Requirements and Feasibility”, IEEE Trans. Nucl. Sci. 35, No. 5, 1099-1113 (1988).

J. R. Schwank and D. M. Fleetwood (SNL), “The Effect of Postoxidation Anneal Temperature on Radiation-Induced Charge Trapping in Polycrystalline Silicon Gate Metal-Oxide-Semiconductor Devices”, Appl. Phys. Lett. 53, 770-2 (1988).

J. R. Schwank, F. W. Sexton, D. M. Fleetwood, R. V. Jones, R. S. Flores, M. S. Rodgers, and D. T. Sanders (SNL), “Temperature Effects on the Radiation Response of MOS Devices”, IEEE Trans. Nucl. Sci. 35, 1432-7 (1988).

R.D. Schrimpf and R.M. Warner, Jr., “An Approximate-Analytic Solution for the Forward Biased Step Junction,” IEEE Trans. Electron Devices, vol. ED-35, pp. 698-700, 1988.

R.D. Schrimpf and R.M. Warner, Jr., “An Approximate-Analytic Solution for the Forward Biased Step Junction,” IEEE Trans. Electron Devices, vol. ED-35, pp. 698-700, 1988.

R.D. Schrimpf, P.J. Wahle, R.C. Andrews, D.B. Cooper, and K.F. Galloway, “Dose-Rate Effects on the Total-Dose Threshold-Voltage Shift of Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. NS-35, pp. 1536-1540, 1988.

W.J. Stapor, P.T. McDonald, S.L. Swickert, A.B. Campbell, T. Palmer, L.W. Massengill, and S.E. Kerns, “Low-Temperature SEU on NMOS/CMOS Static RAMs,” IEEE Trans. on Nuclear Science, vol. NS-35, no. 6, Dec. 1988.