C. M. Dozier (NRL), D. M. Fleetwood (SNL), D. B. Brown (NRL), and P. S. Winokur (SNL), “An Evaluation of Low-Energy X-ray and Cobalt-60 Irradiations of MOS Transistors”, IEEE Trans. Nucl. Sci. 34, 1535-39 (1987).

D. E. Beutler, D. M. Fleetwood, W. Beezhold, D. Knott, L. J. Lorence, Jr, and B. L. Draper (SNL), “Variations in Semiconductor Response in a Medium-Energy X-ray Dose-Enhancing Environment”, IEEE Trans. Nucl. Sci. 34, 1544-50 (1987).

D. M. Fleetwood, D. E. Beutler (SNL), J. T. Masden, and N. Giordano (Purdue Univ.), “The Role of Temperature in Sample-to-Sample Comparisons of the 1/f Noise of Metal Films”, J. Appl. Phys. 61, 5308-13 (1987).

D. M. Fleetwood, P. V. Dressendorfer, and D. C. Turpin (SNL), “A Reevaluation of Worst-Case Postirradiation Response for Hardened MOS Transistors”, IEEE Trans. Nucl. Sci. 34, 1178-83 (1987).

D. M. Fleetwood and P. V. Dressendorfer (SNL), “A Simple Method to Predict Radiation and Annealing Biases that Lead to Worst-Case CMOS Static RAM Postirradiation Response”, IEEE Trans. Nucl. Sci. 34, 1408-13 (1987).

J. R. Schwank, D. M. Fleetwood, P. S. Winokur, P. V. Dressendorfer, D. C. Turpin, and D. T. Sanders (SNL), “The Role of Hydrogen in Radiation-Induced Defect Formation in Polysilicon-Gate CMOS Devices”, IEEE Trans. Nucl. Sci. 34, 1152-8 (1987).

J.H. Hohl and K.F. Galloway, “Analytical Model for Single Event Burnout of Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. NS-34, pp. 1275-1280, 1987.

M.A. Xapsos, L.W. Massengill, W.J. Stapor, P. Shapiro, A.B. Campbell, S.E. Kerns, K.W. Fernald, and A.R. Knudson, “Single-Event, Enhanced Single-Event, and Dose-Rate Effects with Pulsed Proton Beams,” IEEE Trans. on Nuclear Science, vol. NS-34, no. 6., Dec. 1987.

R.D. Schrimpf, D.-H. Ju, and R.M. Warner, Jr., “Subthreshold Transconductance in the Long Channel MOSFET,” Solid-St. Electronics, vol. 30, pp. 1043-1048, 1987.

R.M. Warner, Jr. and R.D. Schrimpf, “BJT-MOSFET Transconductance Comparisons,” IEEE Trans. Electron Devices, vol. ED-34, pp. 1061-1065, 1987.

S. S. Tsao, D. M. Fleetwood, H. T. Weaver (SNL), L. Pfeiffer, and G. K. Celler (AT&T Bell Labs), “Radiation-Tolerant, Sidewall-Hardened SOI/MOS Transistors”, IEEE Trans. Nucl. Sci. 34, 1686-91 (1987).