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D. M. Fleetwood, R. W. Beegle, F. W. Sexton, P. S. Winokur, S. L. Miller, R. K. Treece, J. R. Schwank, R. V. Jones, and P. J. McWhorter (SNL), “Using a 10-keV X-ray Source for Hardness Assurance”, IEEE Trans. Nucl. Sci. 33, 1330-6 (1986).

F. W. Sexton, J. R. Schwank, P. S. Winokur, D. M. Fleetwood, and P. V. Dressendorfer, “Silicon-Gate Device Response in a Satellite-Based SDI Environment,” J. Radiation Effects: Research & Engineering, 5, 1-5 (1986).

J. R. Schwank, P. S. Winokur, F. W. Sexton, D. M. Fleetwood, J. H. Perry, P. V. Dressendorfer, D. T. Sanders, and D. C. Turpin (SNL), “Radiation-Induced Interface-State Generation in MOS Devices”, IEEE Trans. Nucl. Sci. 33, 1178-84 (1986).

L.W. Massengill, S.E. Diehl, and J.S. Browning, “Dose-Rate Upset Patterns in a 16k CMOS SRAM,” IEEE Trans. on Nuclear Science, vol. NS-33, no. 6, Dec. 1986.

L.W. Massengill, T.H. Glisson, J.R. Hauser, and M.A. Littlejohn, “Transient Transport in Central-Valley-Dominated Ternary III-V Alloys,” Solid State Electronics, vol. 29, 1986.

M.R. Ackermann, R.E. Mikawa, L.W. Massengill, and S.E. Diehl, “Factors Contributing to CMOS Static RAM Upset,” IEEE Trans. on Nuclear Science, vol. NS-33, no. 6, Dec. 1986.

P. S. Winokur, F. W. Sexton, J. R. Schwank, D. M. Fleetwood, P. V. Dressendorfer, T. F. Wrobel, and D. C. Turpin (SNL), “Total-Dose Radiation and Annealing Studies: Implications for Hardness Assurance Testing”, IEEE Trans. Nucl. Sci. 33, 1343-51 (1986).