D. M. Fleetwood and N. Giordano (Purdue Univ.), “Direct Link Between 1/f Noise and Defects in Metal Films”, Phys. Rev. B 31, 1157-9 (1985).

J. D. McBrayer, D. M. Fleetwood, R. A. Pastorek, and R. V. Jones (SNL), “Correlation of Hot-Carrier and Radiation Effects in MOS Transistors”, IEEE Trans. Nucl. Sci. 32, 3935-39 (1985).

L.W. Massengill, S.E. Diehl-Nagle, and T.F. Wrobel, “Analysis of Transient Radiation Upset in a 2k SRAM,” IEEE Trans. on Nuclear Science, vol. NS-32, no. 6, Dec. 1985.

L.W. Massengill, S.E. Diehl-Nagle, T.M. Mnich, T.F. Wrobel, and P.V. Dressendorfer, “Transient Radiation Hardening of CMOS LSI and VLSI Memory Circuits,” Journal of Radiation Effects Research and Technology, vol. 3, 1985.

P. S. Winokur, E. B. Errett, D. M. Fleetwood, P. V. Dressendorfer, and D. C. Turpin (SNL), “Optimizing and Controlling the Radiation Hardness of a Si-Gate CMOS Process”, IEEE Trans. Nucl. Sci. 32, 3954-60 (1985). Outstanding Paper Award, 1985 Conference on Nuclear and Space Radiation Effects.

R.D. Schrimpf and R.M. Warner, Jr., “A Precise Scaling Length for Depleted Regions,” Solid-St. Electronics, vol. 28, pp. 779-782, 1985.

R.M. Warner, Jr., R.D. Schrimpf, and P.D. Wang, “Explaining the Saturation of Potential Drop on the High Side of a Grossly Asymmetric Junction,” J. Appl. Phys., vol. 57, pp. 1239-1241, 1985.