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MURI 2002 Agenda
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The Annual Meeting was held at Vanderbilt University, August, 20-21, 2002PDF version of the talks are available (PDF link).
PowerPoint version of the talks are also posted (PPT link).
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This page will be updated as authors provide us with their presentation(s).August 20
PowerPoint version of the talks are also posted (PPT link).
You may need to upgrade Acrobat Reader.
This page will be updated as authors provide us with their presentation(s).August 20
8:30 | Welcoming Remarks Jerry Witt (e-mail), AFSOR |
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8:40 | Vanderbilt Welcome Ken Galloway (e-mail), Vanderbilt University |
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8:50 | Muri Overview Ron Schrimpf (e-mail, www), Vanderbilt University |
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9:15 | Atomic-Scale Modeling of Radiation-Induced Defects Sokrates Pantelides (e-mail), Vanderbilt University |
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9:45 | Physical Model for Enhanced Interface-Trap Formation at Low Dose Rates Sergey Rashkeev (e-mail), Vanderbilt university |
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10:15 | Break | ||
10:45 | Integration of Atomic-Scale Radiation-Effects Models with Technology Computer-Aided Design (TCAD) Tools Ron Schrimpf (e-mail, www), Vanderbilt university |
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11:15 | Microstructures and Energetics of Oxygen Vacancies in Amorphous SiO2 Chris Nicklaw, Vanderbilt University/DRC |
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11:450 | Lunch | ||
12:45 | Unified Model of Hole Trapping, 1/f Noise, and Thermally Stimulated Current in MOS Devices Dan Fleetwood (e-mail), Vanderbilt University |
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1:15 | Long-Term Reliability Degradation of Ultra-Thin Dielectric Films due to Heavy-Ion Irradiation Lloyd Massengill (e-mail), Vanderbilt University |
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1:45 | Total-Dose Effects in Alternate Dielectric Films Jim Felix (e-mail), Vanderbilt University |
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2:15 | Break | ||
2:45 | Characterization of Proton Irradiated AlGaN/GaN Field-Effect Transistor Structures by Nanoscale Depth-Resolved Spectroscopy Len Brillson (e-mail, www), Ohio State University |
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3:30 | Characterization of X-Ray Radiation Damage in Gate and Isolation Oxides Using Second Harmonic Generation Norm Tolk (e-mail), Vanderbilt University |
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4:00 | 1.8 MeV Proton Damage Effects on the Threshole Current and Operating Wavelength of Vertical Cavity Surface Emitting Lasers Aditya Kalavagunta , University of Arizona |
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4:35 | Discussion | ||
6:30 | Dinner |
August 21
8:30 | Electronic Structure of Transition Metal Oxides, and Silicate and Aluminate Alloys Gerry Lucovsky (e-mail), North Carolina State University |
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9:15 | Luminescence, DLTS and Noise Spectroscopies of Radiation Damage in GaN and GOI MESFETs Eicke Weber (e-mail, www), University of California, Berkeley |
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10:00 | Break | ||
10:20 | Status of AlGaN/GaN HEMTs and GOI Devices for Space Applications Umesh Mishra (e-mail), University of California, Santa Barbara |
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11:05 | Proton-Irradiation Effects on GaAs/AlGaAs HBTs and GaN and GOI FETs Bo Choi (e-mail), Vanderbilt University |
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11:25 | Feedback from Attendees | ||
12:00 | Meeting Ends |
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