S. Bhandaru, S. Hu, D. M. Fleetwood, and S. M. Weiss, “Total Ionizing Dose Effects on Silicon Ring Resonators,” Ieee Transactions on Nuclear Science, vol. 62, pp. 323-328, Feb 2015.

S. Bhandaru, E. X. Zhang, D. M. Fleetwood, R. A. Reed, R. A. Weller, R. R. Harl, B. R. Rogers, and S. M. Weiss, “Ultra-thin oxide growth on silicon during 10 keV x-ray irradiation,” Surface Science, vol. 635, pp. 49-54, May 2015.

D. A. Black, W. H. Robinson, I. Z. Wilcox, D. B. Limbrick, and J. D. Black, “Modeling of Single Event Transients With Dual Double-Exponential Current Sources: Implications for Logic Cell Characterization,” Ieee Transactions on Nuclear Science, vol. 62, pp. 1540-1549, Aug 2015.

Z. J. Diggins, N. Mahadevan, D. Herbison, G. Karsai, E. Barth, R. A. Reed, R. D. Schrimpf, R. A. Weller, M. L. Alles, and A. Witulski, “Range-Finding Sensor Degradation in Gamma Radiation Environments,” Ieee Sensors Journal, vol. 15, Mar 2015.

Z. J. Diggins, N. Mahadevan, E. B. Pitt, D. Herbison, G. Karsai, B. D. Sierawski, E. J. Barth, R. A. Reed, R. D. Schrimpf, R. A. Weller, M. L. Alles, and A. F. Witulski, “System Health Awareness in Total-Ionizing Dose Environments,” Ieee Transactions on Nuclear Science, vol. 62, pp. 1674-1681, Aug 2015.

G. X. Duan, J. Hatchtel, X. Shen, E. X. Zhang, C. X. Zhang, B. R. Tuttle, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, J. Franco, D. Linten, J. Mitard, L. Witters, N. Collaert, M. F. Chisholm, and S. T. Pantelides, “Activation Energies for Oxide- and Interface-Trap Charge Generation Due to Negative-Bias Temperature Stress of Si-Capped SiGe-pMOSFETs,” Ieee Transactions on Device and Materials Reliability, vol. 15, pp. 352-358, Sep 2015.

D. M. Fleetwood, “1/f Noise and Defects in Microelectronic Materials and Devices,” Ieee Transactions on Nuclear Science, vol. 62, pp. 1462-1486, Aug 2015.

E. D. Funkhouser, R. A. Weller, R. A. Reed, R. D. Schrimpf, M. H. Mendenhall, and M. Asai, “Limitations of LET in Predicting the Radiation Response of Advanced Devices,” Ieee Transactions on Nuclear Science, vol. 62, pp. 1558-1567, Aug 2015.

G. Gaur, D. S. Koktysh, D. M. Fleetwood, R. A. Weller, R. A. Reed, and S. M. Weiss, “Influence of interfacial oxide on the optical properties of single layer CdTe/CdS quantum dots in porous silicon scaffolds,” Applied Physics Letters, vol. 107, Aug 10 2015.

J. S. Kauppila, L. W. Massengill, D. R. Ball, M. L. Alles, R. D. Schrimpf, T. D. Loveless, J. A. Maharrey, R. C. Quinn, and J. D. Rowe, “Geometry-Aware Single-Event Enabled Compact Models for Sub-50 nm Partially Depleted Silicon-on-Insulator Technologies,” Ieee Transactions on Nuclear Science, vol. 62, pp. 1589-1598, Aug 2015.

B. T. Kiddie, W. H. Robinson, and D. B. Limbrick, “Single-Event Multiple-Transient Characterization and Mitigation via Alternative Standard Cell Placement Methods,” Acm Transactions on Design Automation of Electronic Systems, vol. 20, Sep 2015.

R. H. Mackey, L. H. Kuller, K. D. Deane, B. T. Walitt, Y. F. Chang, V. M. Holers, W. H. Robinson, R. P. Tracy, M. A. Hlatky, C. B. Eaton, S. M. Liu, M. S. Freiberg, M. B. Talabi, E. B. Schelbert, and L. W. Moreland, “Rheumatoid Arthritis, Anti-Cyclic Citrullinated Peptide Positivity, and Cardiovascular Disease Risk in the Women’s Health Initiative,” Arthritis & Rheumatology, vol. 67, pp. 2311-2322, Sep 2015.

Y. S. Puzyrev, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, “Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors,” Applied Physics Letters, vol. 106, Feb 2 2015.

R. A. Reed, R. A. Weller, M. H. Mendenhall, D. M. Fleetwood, K. M. Warren, B. D. Sierawski, M. P. King, R. D. Schrimpf, and E. C. Auden, “Physical Processes and Applications of the Monte Carlo Radiative Energy Deposition (MRED) Code,” Ieee Transactions on Nuclear Science, vol. 62, pp. 1441-1461, Aug 2015.

J. C. Shank, M. B. Tellekamp, E. X. Zhang, W. G. Bennett, M. W. McCurdy, D. M. Fleetwood, M. L. Alles, R. D. Schrimpf, and W. A. Doolittle, “Self-Healing of Proton Damage in Lithium Niobite (LiNbO2),” Ieee Transactions on Nuclear Science, vol. 62, pp. 542-547, Apr 2015.

X. Shen, Y. S. Puzyrev, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “Quantum Mechanical Modeling of Radiation-Induced Defect Dynamics in Electronic Devices,” Ieee Transactions on Nuclear Science, vol. 62, pp. 2169-2180, Oct 2015.

H. B. Wang, Y. Q. Li, L. Chen, L. X. Li, R. Liu, S. Baeg, N. Mahatme, B. L. Bhuva, S. J. Wen, R. Wong, and R. Fung, “An SEU-Tolerant DICE Latch Design With Feedback Transistors,” Ieee Transactions on Nuclear Science, vol. 62, pp. 548-554, Apr 2015.

L. Watkins, W. H. Robinson, and R. Beyah, “Using Network Traffic to Infer Hardware State: A Kernel-Level Investigation,” Acm Transactions on Embedded Computing Systems, vol. 14, May 2015.

S. L. Weeden-Wright, M. P. King, N. C. Hooten, W. G. Bennett, B. D. Sierawski, R. D. Schrimpf, R. A. Weller, R. A. Reed, M. H. Mendenhall, D. M. Fleetwood, M. L. Alles, and R. C. Baumann, “Effects of Energy-Deposition Variability on Soft Error Rate Prediction,” Ieee Transactions on Nuclear Science, vol. 62, pp. 2181-2186, Oct 2015.

Z. Zhang, A. R. Arehart, E. C. H. Kyle, J. Chen, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, J. S. Speck, and S. A. Ringel, “Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy,” Applied Physics Letters, vol. 106, Jan 12 2015.

Z. Zhang, E. Farzana, W. Y. Sun, J. Chen, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, B. McSkimming, E. C. H. Kyle, J. S. Speck, A. R. Arehart, and S. A. Ringel, “Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN,” Journal of Applied Physics, vol. 118, Oct 21 2015.

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