L. Alles, H. L. Hughes, D. R. Ball, P. J. McMarr, and R. D. Schrimpf, “Total-Ionizing-Dose Response of Narrow, Long Channel 45 nm PDSOI Transistors,” Ieee Transactions on Nuclear Science, vol. 61, pp. 2945-2950, Dec 2014.

L. Alles, R. D. Schrimpf, L. W. Massengill, D. R. Ball, A. T. Kelly, N. F. Haddad, J. C. Rodgers, J. F. Ross, E. Chan, A. Raman, and M. Turowski, “State and Angular Dependence of Single-Event Upsets in an Asymmetric RC-Hardened SRAM Using Deep Trench Capacitors,” Ieee Transactions on Nuclear Science, vol. 61, pp. 3068-3073, Dec 2014.

Arora, Z. E. Fleetwood, E. X. Zhang, N. E. Lourenco, J. D. Cressler, D. M. Fleetwood, R. D. Schrimpf, A. K. Sutton, G. Freeman, and B. Greene, “Impact of Technology Scaling in sub-100 nm nMOSFETs on Total-Dose Radiation Response and Hot-Carrier Reliability,” Ieee Transactions on Nuclear Science, vol. 61, pp. 1426-1432, Jun 2014.

G. Bennett, N. C. Hooten, R. D. Schrimpf, R. A. Reed, M. L. Alles, E. X. Zhang, S. L. Weeden-Wright, D. Linten, M. Jurczak, and A. Fantini, “Dynamic Modeling of Radiation-Induced State Changes in HfO2/Hf 1T1R RRAM,” Ieee Transactions on Nuclear Science, vol. 61, pp. 3497-3503, Dec 2014.

G. Bennett, N. C. Hooten, R. D. Schrimpf, R. A. Reed, M. H. Mendenhall, M. L. Alles, J. S. Bi, E. X. Zhang, D. Linten, M. Jurzak, and A. Fantini, “Single- and Multiple-Event Induced Upsets in HfO2/Hf 1T1R RRAM,” Ieee Transactions on Nuclear Science, vol. 61, pp. 1717-1725, Aug 2014.

S. Cardoso, P. S. Chakraborty, N. Karaulac, D. M. Fleischhauer, N. E. Lourenco, Z. E. Fleetwood, A. P. Omprakash, T. D. England, S. Jung, L. Najafizadeh, N. J. H. Roche, A. Khachatrian, J. H. Warner, D. McMorrow, S. P. Buchner, E. X. Zhang, C. X. Zhang, M. W. McCurdy, R. A. Reed, D. M. Fleetwood, P. Paki-Amouzou, and J. D. Cressler, “Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology,” Ieee Transactions on Nuclear Science, vol. 61, pp. 3210-3217, Dec 2014.

Chatterjee, B. Narasimham, N. N. Mahatme, B. L. Bhuva, R. A. Reed, R. D. Schrimpf, J. K. Wang, N. Vedula, B. Bartz, and C. Monzel, “Impact of Technology Scaling on SRAM Soft Error Rates,” Ieee Transactions on Nuclear Science, vol. 61, pp. 3512-3518, Dec 2014.

Chatterjee, E. X. Zhang, B. L. Bhuva, R. A. Reed, M. L. Alles, N. N. Mahatme, D. R. Ball, R. D. Schrimpf, D. M. Fleetwood, D. Linten, E. Simoen, J. Mitard, and C. Claeys, “Geometry Dependence of Total-Dose Effects in Bulk FinFETs,” Ieee Transactions on Nuclear Science, vol. 61, pp. 2951-2958, Dec 2014.

Chen, E. X. Zhang, C. X. Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, and J. S. Speck, “RF Performance of Proton-Irradiated AlGaN/GaN HEMTs,” Ieee Transactions on Nuclear Science, vol. 61, pp. 2959-2964, Dec 2014.

P. Chen, T. D. Loveless, P. Maillard, N. J. Gaspard, S. Jagannathan, A. L. Sternberg, E. X. Zhang, A. F. Witulski, B. L. Bhuva, T. W. Holman, and L. W. Massengill, “Single-Event Transient Induced Harmonic Errors in Digitally Controlled Ring Oscillators,” Ieee Transactions on Nuclear Science, vol. 61, pp. 3163-3170, Dec 2014.

J. Diggins, N. Mahadevan, D. Herbison, G. Karsai, B. D. Sierawski, E. Barth, E. B. Pitt, R. A. Reed, R. D. Schrimpf, R. A. Weller, M. L. Alles, and A. Witulski, “Total-Ionizing-Dose Induced Timing Window Violations in CMOS Microcontrollers,” Ieee Transactions on Nuclear Science, vol. 61, pp. 2979-2984, Dec 2014.

A. Dodds, J. R. Schwank, M. R. Shaneyfelt, P. E. Dodd, B. L. Doyle, M. Trinczek, E. W. Blackmore, K. P. Rodbell, M. S. Gordon, R. A. Reed, J. A. Pellish, K. A. Label, P. W. Marshall, S. E. Swanson, G. Vizkelethy, S. Van Deusen, F. W. Sexton, and M. J. Martinez, “Hardness Assurance for Proton Direct Ionization-Induced SEEs Using a High-Energy Proton Beam,” Ieee Transactions on Nuclear Science, vol. 61, pp. 2904-2914, Dec 2014.

X. Duan, C. X. Zhang, E. X. Zhang, J. Hachtel, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, M. L. Alles, S. T. Pantelides, G. Bersuker, and C. D. Young, “Bias Dependence of Total Ionizing Dose Effects in SiGe-SiO2/HfO2 pMOS FinFETs,” Ieee Transactions on Nuclear Science, vol. 61, pp. 2834-2838, Dec 2014.

E. Fleetwood, E. W. Kenyon, N. E. Lourenco, S. Jain, E. X. Zhang, T. D. England, J. D. Cressler, R. D. Schrimpf, and D. M. Fleetwood, “Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems,” Ieee Transactions on Device and Materials Reliability, vol. 14, pp. 844-848, Sep 2014.

D. Haeffner, T. D. Loveless, E. X. Zhang, A. L. Sternberg, S. Jagannathan, R. D. Schrimpf, J. S. Kauppila, M. L. Alles, D. M. Fleetwood, L. W. Massengill, and N. F. Haddad, “Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process,” Ieee Transactions on Nuclear Science, vol. 61, pp. 3037-3042, Dec 2014.

Kalavagunta, S. Mukherjee, R. Reed, and R. D. Schrimpf, “Comparison between trap and self-heating induced mobility degradation in AlGaN/GaN HEMTs,” Microelectronics Reliability, vol. 54, pp. 570-574, Mar 2014.

Kaouache, F. Wrobel, F. Saigne, A. D. Touboul, R. D. Schrimpf, and J. L. Autran, “An Analytical Model to Quantify Decay Chain Disequilibrium-Application to the Thorium Decay Chain,” Ieee Transactions on Nuclear Science, vol. 61, pp. 1414-1419, Jun 2014.

T. Kelly, M. L. Alles, D. R. Ball, L. W. Massengill, S. Ramaswamy, N. F. Haddad, R. D. Brown, P. R. Fleming, E. Chan, V. Ekanayake, C. W. Kelly, C. Pelosi, D. McMorrow, S. P. Buchner, J. H. Warner, and M. D. Berg, “Mitigation of Single-Event Charge Sharing in a Commercial FPGA Architecture,” Ieee Transactions on Nuclear Science, vol. 61, pp. 1635-1642, Aug 2014.

X. Luo, J. Chen, Z. Chai, K. Lu, W. W. He, Y. Yang, E. X. Zhang, D. M. Fleetwood, and X. Wang, “Total Dose Effects in Tunnel-Diode Body-Contact SOI nMOSFETs,” Ieee Transactions on Nuclear Science, vol. 61, pp. 3018-3022, Dec 2014.

N. Mahatme, N. J. Gaspard, T. Assis, I. Chatterjee, T. D. Loveless, B. L. Bhuva, W. H. Robinson, L. W. Massengill, S. J. Wen, and R. Wong, “Kernel-Based Circuit Partition Approach to Mitigate Combinational Logic Soft Errors,” Ieee Transactions on Nuclear Science, vol. 61, pp. 3274-3281, Dec 2014.

Ni, E. X. Zhang, N. C. Hooten, W. G. Bennett, M. W. McCurdy, A. L. Sternberg, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, M. L. Alles, T. W. Kim, J. Q. Lin, and J. A. del Alamo, “Single-Event Transient Response of InGaAs MOSFETs,” Ieee Transactions on Nuclear Science, vol. 61, pp. 3550-3556, Dec 2014.

Puzyrev, S. Mukherjee, J. Chen, T. Roy, M. Silvestri, R. D. Schrimpf, D. M. Fleetwood, J. Singh, J. M. Hinckley, A. Paccagnella, and S. T. Pantelides, “Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs,” Ieee Transactions on Electron Devices, vol. 61, pp. 1316-1320, May 2014.

Ren, A. L. He, S. T. Shi, G. Guo, L. Chen, S. J. Wen, R. Wong, N. W. van Vonno, and B. L. Bhuva, “Single-Event Transient Measurements on a DC/DC Pulse Width Modulator Using Heavy Ion, Proton, and Pulsed Laser,” Journal of Electronic Testing-Theory and Applications, vol. 30, pp. 149-154, Feb 2014.

J. H. Roche, S. P. Buchner, C. C. Foster, M. P. King, N. A. Dodds, J. H. Warner, D. Mc Morrow, T. Decker, P. M. O’Neill, B. D. Reddell, K. V. Nguyen, I. K. Samsel, N. C. Hooten, W. G. Bennett, and R. A. Reed, “Validation of the Variable Depth Bragg Peak Method for Single-Event Latchup Testing Using Ion Beam Characterization,” Ieee Transactions on Nuclear Science, vol. 61, pp. 3061-3067, Dec 2014.

Roche, G. Gasiot, J. L. Autran, D. Munteanu, R. A. Reed, and R. A. Weller, “Application of the TIARA Radiation Transport Tool to Single Event Effects Simulation,” Ieee Transactions on Nuclear Science, vol. 61, pp. 1498-1500, Jun 2014.

L. Weeden-Wright, W. G. Bennett, N. C. Hooten, E. X. Zhang, M. W. McCurdy, M. P. King, R. A. Weller, M. H. Mendenhall, M. L. Alles, D. Linten, M. Jurczak, R. Degraeve, A. Fantini, R. A. Reed, D. M. Fleetwood, and R. D. Schrimpf, “TID and Displacement Damage Resilience of 1T1R HfO2/Hf Resistive Memories,” Ieee Transactions on Nuclear Science, vol. 61, pp. 2972-2978, Dec 2014.

X. Zhang, A. K. M. Newaz, B. Wang, E. X. Zhang, G. X. Duan, D. M. Fleetwood, M. L. Alles, R. D. Schrimpf, K. I. Bolotin, and S. T. Pantelides, “Electrical Stress and Total Ionizing Dose Effects on MoS2 Transistors,” Ieee Transactions on Nuclear Science, vol. 61, pp. 2862-2867, Dec 2014.

X. Zhang, B. Wang, G. X. Duan, E. X. Zhang, D. M. Fleetwood, M. L. Alles, R. D. Schrimpf, A. P. Rooney, E. Khestanova, G. Auton, R. V. Gorbachev, S. J. Haigh, and S. T. Pantelides, “Total Ionizing Dose Effects on hBN Encapsulated Graphene Devices,” Ieee Transactions on Nuclear Science, vol. 61, pp. 2868-2873, Dec 2014.

X. Zhang, E. X. Zhang, D. M. Fleetwood, M. L. Alles, R. D. Schrimpf, C. Rutherglen, and K. Galatsis, “Total-ionizing-dose effects and reliability of carbon nanotube FET devices,” Microelectronics Reliability, vol. 54, pp. 2355-2359, Nov 2014.

X. Zhang, I. K. Samsel, N. C. Hooten, W. G. Bennett, E. D. Funkhouser, K. Ni, D. R. Ball, M. W. McCurdy, D. M. Fleetwood, R. A. Reed, M. L. Alles, R. D. Schrimpf, D. Linten, and J. Mitard, “Heavy-Ion and Laser Induced Charge Collection in SiGe Channel pMOSFETs,” Ieee Transactions on Nuclear Science, vol. 61, pp. 3187-3192, Dec 2014.

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