N. M. Atkinson, R. W. Blaine, J. S. Kauppila, S. E. Armstrong, T. D. Loveless, N. C. Hooten, W. T. Holman, L. W. Massengill, and J. H. Warner, “RHBD Technique for Single-Event Charge Cancellation in Folded-Cascode Amplifiers,” Ieee Transactions on Nuclear Science, vol. 60, pp. 2756-2761, Aug 2013.

N. M. Atkinson, W. T. Holman, J. S. Kauppila, T. D. Loveless, N. C. Hooten, A. F. Witulski, B. L. Bhuva, L. W. Massengill, E. X. Zhang, and J. H. Warner, “The Quad-Path Hardening Technique for Switched-Capacitor Circuits,” Ieee Transactions on Nuclear Science, vol. 60, pp. 4356-4361, Dec 2013.

E. C. Auden, R. A. Weller, R. D. Schrimpf, M. H. Mendenhall, R. A. Reed, N. C. Hooten, W. G. Bennett, and M. P. King, “Effects of High Electric Fields on the Magnitudes of Current Steps Produced by Single Particle Displacement Damage,” Ieee Transactions on Nuclear Science, vol. 60, pp. 4094-4102, Dec 2013.

W. G. Bennett, N. C. Hooten, R. D. Schrimpf, R. A. Reed, R. A. Weller, M. H. Mendenhall, A. F. Witulski, and D. M. Wilkes, “Experimental Characterization of Radiation-Induced Charge Sharing,” Ieee Transactions on Nuclear Science, vol. 60, pp. 4159-4165, Dec 2013.

J. S. Bi, Z. S. Han, E. X. Zhang, M. W. McCurdy, R. A. Reed, R. D. Schrimpf, D. M. Fleetwood, M. L. Alles, R. A. Weller, D. Linten, M. Jurczak, and A. Fantini, “The Impact of X-Ray and Proton Irradiation on HfO2/Hf-Based Bipolar Resistive Memories,” Ieee Transactions on Nuclear Science, vol. 60, pp. 4540-4546, Dec 2013.

I. Chatterjee, E. X. Zhang, B. L. Bhuva, M. A. Alles, R. D. Schrimpf, D. M. Fleetwood, Y. P. Fang, and A. Oates, “Bias Dependence of Total-Dose Effects in Bulk FinFETs,” Ieee Transactions on Nuclear Science, vol. 60, pp. 4476-4482, Dec 2013.

J. Chen, Y. S. Puzyrev, C. X. Zhang, E. X. Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, S. W. Kaun, E. C. H. Kyle, and J. S. Speck, “Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs,” Ieee Transactions on Nuclear Science, vol. 60, pp. 4080-4086, Dec 2013.

Z. J. Diggins, N. J. Gaspard, N. N. Mahatme, S. Jagannathan, T. D. Loveless, T. R. Reece, B. L. Bhuva, A. F. Witulski, L. W. Massengill, S. J. Wen, and R. Wong, “Scalability of Capacitive Hardening for Flip-Flops in Advanced Technology Nodes,” Ieee Transactions on Nuclear Science, vol. 60, pp. 4394-4398, Dec 2013.

N. A. Dodds, N. C. Hooten, R. A. Reed, R. D. Schrimpf, J. H. Warner, N. J. H. Roche, D. McMorrow, S. Buchner, S. Jordan, J. A. Pellish, W. G. Bennett, N. J. Gaspard, and M. P. King, “SEL-Sensitive Area Mapping and the Effects of Reflection and Diffraction From Metal Lines on Laser SEE Testing,” Ieee Transactions on Nuclear Science, vol. 60, pp. 2550-2558, Aug 2013.

V. Ferlet-Cavrois, L. W. Massengill, and P. Gouker, “Single Event Transients in Digital CMOS-A Review,” Ieee Transactions on Nuclear Science, vol. 60, pp. 1767-1790, Jun 2013.

D. M. Fleetwood, “Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices,” Ieee Transactions on Nuclear Science, vol. 60, pp. 1706-1730, Jun 2013.

K. F. Galloway, R. L. Pease, R. D. Schrimpf, and D. W. Emily, “From Displacement Damage to ELDRS: Fifty Years of Bipolar Transistor Radiation Effects at the NSREC,” Ieee Transactions on Nuclear Science, vol. 60, pp. 1731-1739, Jun 2013.

K. F. Galloway and T. L. Primich, “Update on High-Impact Papers Presented at the IEEE Nuclear and Space Radiation Effects Conference: The View in 2013,” Ieee Transactions on Nuclear Science, vol. 60, pp. 1674-1680, Jun 2013.

N. J. Gaspard, S. Jagannathan, Z. J. Diggins, M. P. King, S. J. Wen, R. Wong, T. D. Loveless, K. Lilja, M. Bounasser, T. Reece, A. F. Witulski, W. T. Holman, B. L. Bhuva, and L. W. Massengill, “Technology Scaling Comparison of Flip-Flop Heavy-Ion Single-Event Upset Cross Sections,” Ieee Transactions on Nuclear Science, vol. 60, pp. 4368-4373, Dec 2013.

J. D. Greenlee, J. C. Shank, M. B. Tellekamp, E. X. Zhang, J. S. Bi, D. M. Fleetwood, M. L. Alles, R. D. Schrimpf, and W. A. Doolittle, “Radiation Effects on LiNbO2 Memristors for Neuromorphic Computing Applications,” Ieee Transactions on Nuclear Science, vol. 60, pp. 4555-4562, Dec 2013.

S. T. Guo, J. X. Li, P. Gui, Y. Ren, L. Chen, and B. L. Bhuva, “Single-Event Transient Effect on a Self-Biased Ring-Oscillator PLL and an LC PLL Fabricated in SOS Technology,” Ieee Transactions on Nuclear Science, vol. 60, pp. 4668-4672, Dec 2013.

N. C. Hooten, W. G. Bennett, L. D. Edmonds, J. A. Kozub, R. A. Reed, R. D. Schrimpf, and R. A. Weller, “The Impact of Depletion Region Potential Modulation on Ion-Induced Current Transient Response,” Ieee Transactions on Nuclear Science, vol. 60, pp. 4150-4158, Dec 2013.

S. Jagannathan, T. D. Loveless, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, T. D. Haeffner, J. S. Kauppila, N. Mahatme, B. L. Bhuva, M. L. Alles, W. T. Holman, A. F. Witulski, and L. W. Massengill, “Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation,” Ieee Transactions on Nuclear Science, vol. 60, pp. 4498-4504, Dec 2013.

A. Kaouache, F. Wrobel, F. Saigne, A. D. Touboul, and R. D. Schrimpf, “Analytical Method to Evaluate Soft Error Rate Due to Alpha Contamination,” Ieee Transactions on Nuclear Science, vol. 60, pp. 4059-4066, Dec 2013.

M. P. King, R. A. Reed, R. A. Weller, M. H. Mendenhall, R. D. Schrimpf, B. D. Sierawski, A. L. Sternberg, B. Narasimham, J. K. Wang, E. Pitta, B. Bartz, D. Reed, C. Monzel, R. C. Baumann, X. Deng, J. A. Pellish, M. D. Berg, C. M. Seidleck, E. C. Auden, S. L. Weeden-Wright, N. J. Gaspard, C. X. Zhang, and D. M. Fleetwood, “Electron-Induced Single-Event Upsets in Static Random Access Memory,” Ieee Transactions on Nuclear Science, vol. 60, pp. 4122-4129, Dec 2013.

D. B. Limbrick, N. N. Mahatme, W. H. Robinson, and B. L. Bhuva, “Reliability-Aware Synthesis of Combinational Logic With Minimal Performance Penalty,” Ieee Transactions on Nuclear Science, vol. 60, pp. 2776-2781, Aug 2013.

J. A. Maharrey, R. C. Quinn, T. D. Loveless, J. S. Kauppila, S. Jagannathan, N. M. Atkinson, N. J. Gaspard, E. X. Zhang, M. L. Alles, B. L. Bhuva, W. T. Holman, and L. W. Massengill, “Effect of Device Variants in 32 nm and 45 nm SOI on SET Pulse Distributions,” Ieee Transactions on Nuclear Science, vol. 60, pp. 4399-4404, Dec 2013.

N. N. Mahatme, I. Chatterjee, A. Patki, D. B. Limbrick, B. L. Bhuva, R. D. Schrimpf, and W. Robinson, “An efficient technique to select logic nodes for single event transient pulse-width reduction,” Microelectronics Reliability, vol. 53, pp. 114-117, Jan 2013.

N. N. Mahatme, I. Chatterjee, A. Patki, D. B. Limbrick, B. L. Bhuva, R. D. Schrimpf, and W. Robinson, “An efficient technique to select logic nodes for single event transient pulse-width reduction,” Microelectronics Reliability, vol. 53, pp. 114-117, Jan 2013.

N. N. Mahatme, N. J. Gaspard, S. Jagannathan, T. D. Loveless, B. L. Bhuva, W. H. Robinson, L. W. Massengill, S. J. Wen, and R. Wong, “Impact of Supply Voltage and Frequency on the Soft Error Rate of Logic Circuits,” Ieee Transactions on Nuclear Science, vol. 60, pp. 4200-4206, Dec 2013.

N. N. Mahatme, N. J. Gaspard, S. Jagannathan, T. D. Loveless, I. Chatterjee, B. L. Bhuva, L. W. Massengill, and R. D. Schrimpf, “Experimental Estimation of the Window of Vulnerability for Logic Circuits,” Ieee Transactions on Nuclear Science, vol. 60, pp. 2691-2696, Aug 2013.

P. Maillard, W. T. Holman, T. D. Loveless, and L. W. Massengill, “A New Error Correction Circuit for Delay Locked Loops,” Ieee Transactions on Nuclear Science, vol. 60, pp. 4387-4393, Dec 2013.

J. A. Pellish and K. F. Galloway, “IEEE Nuclear and Space Radiation Effects Conference: Notes on the Early Conferences,” Ieee Transactions on Nuclear Science, vol. 60, pp. 1681-1689, Jun 2013.

H. M. Quinn, D. A. Black, W. H. Robinson, and S. P. Buchner, “Fault Simulation and Emulation Tools to Augment Radiation-Hardness Assurance Testing,” Ieee Transactions on Nuclear Science, vol. 60, pp. 2119-2142, Jun 2013.

R. A. Reed, R. A. Weller, A. Akkerman, J. Barak, W. Culpepper, S. Duzellier, C. Foster, M. Gaillardin, G. Hubert, T. Jordan, I. Jun, S. Koontz, F. Lei, P. McNulty, M. H. Mendenhall, M. Murat, P. Nieminen, P. O’Neill, M. Raine, B. Reddell, F. Saigne, G. Santin, L. Sihver, H. H. K. Tang, P. R. Truscott, and F. Wrobel, “Anthology of the Development of Radiation Transport Tools as Applied to Single Event Effects,” Ieee Transactions on Nuclear Science, vol. 60, pp. 1876-1911, Jun 2013.

I. K. Samsel, E. X. Zhang, N. C. Hooten, E. D. Funkhouser, W. G. Bennett, R. A. Reed, R. D. Schrimpf, M. W. McCurdy, D. M. Fleetwood, R. A. Weller, G. Vizkelethy, X. Sun, T. P. Ma, O. I. Saadat, and T. Palacios, “Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors,” Ieee Transactions on Nuclear Science, vol. 60, pp. 4439-4445, Dec 2013.

E. Simoen, M. Gaillardin, P. Paillet, R. A. Reed, R. D. Schrimpf, M. L. Alles, F. El-Mamouni, D. M. Fleetwood, A. Griffoni, and C. Claeys, “Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors,” Ieee Transactions on Nuclear Science, vol. 60, pp. 1970-1991, Jun 2013.

X. Sun, O. I. Saadat, J. Chen, E. X. Zhang, S. R. Cui, T. Palacios, D. M. Fleetwood, and T. P. Ma, “Total-Ionizing-Dose Radiation Effects in AlGaN/GaN HEMTs and MOS-HEMTs,” Ieee Transactions on Nuclear Science, vol. 60, pp. 4074-4079, Dec 2013.

X. Sun, F. Xue, J. Chen, E. X. Zhang, S. Cui, J. Lee, D. M. Fleetwood, and T. P. Ma, “Total Ionizing Dose Radiation Effects in Al2O3-Gated Ultra-Thin Body In0.7Ga0.3As MOSFETs,” Ieee Transactions on Nuclear Science, vol. 60, pp. 402-407, Feb 2013.

X. Sun, F. Xue, J. Chen, E. X. Zhang, S. Cui, J. Lee, D. M. Fleetwood, and T. P. Ma, “Total Ionizing Dose Radiation Effects in Al2O3-Gated Ultra-Thin Body In0.7Ga0.3As MOSFETs,” Ieee Transactions on Nuclear Science, vol. 60, pp. 402-407, Feb 2013.

X. W. Wang and W. H. Robinson, “Asynchronous Data Sampling Within Clock-Gated Double Edge-Triggered Flip-Flops,” Ieee Transactions on Circuits and Systems I-Regular Papers, vol. 60, pp. 2401-2411, Sep 2013.

J. H. Warner, D. McMorrow, S. Buchner, J. B. Boos, N. Roche, P. Paillet, M. Gaillardin, E. Blackmore, M. Trinczek, V. Ramachandran, R. A. Reed, and R. D. Schrimpf, “Proton-Induced Transient Charge Collection in GaAs and InAlSb/InAs-Based FETs,” Ieee Transactions on Nuclear Science, vol. 60, pp. 2651-2659, Aug 2013.

S. L. Weeden-Wright, S. L. Gollub, R. Harl, A. B. Hmelo, D. M. Fleetwood, B. R. Rogers, R. D. Schrimpf, and D. G. Walker, “Radiation Effects on the Photoluminescence of Rare-Earth Doped Pyrochlore Powders,” Ieee Transactions on Nuclear Science, vol. 60, pp. 2444-2449, Aug 2013.

C. X. Zhang, X. Shen, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. A. Francis, T. Roy, S. Dhar, S. H. Ryu, and S. T. Pantelides, “Temperature Dependence and Postirradiation Annealing Response of the 1/f Noise of 4H-SiC MOSFETs,” Ieee Transactions on Electron Devices, vol. 60, pp. 2361-2367, Jul 2013.

C. X. Zhang, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. Dhar, S. H. Ryu, X. Shen, and S. T. Pantelides, “Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs,” Ieee Electron Device Letters, vol. 34, pp. 117-119, Jan 2013.

C. X. Zhang, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. Dhar, S. H. Ryu, X. Shen, and S. T. Pantelides, “Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs,” Ieee Electron Device Letters, vol. 34, pp. 117-119, Jan 2013.

E. X. Zhang, D. M. Fleetwood, N. D. Pate, R. A. Reed, A. F. Witulski, and R. D. Schrimpf, “Time-Domain Reflectometry Measurements of Total-Ionizing-Dose Degradation of nMOSFETs,” Ieee Transactions on Nuclear Science, vol. 60, pp. 4470-4475, Dec 2013.

Z. Zhang, A. R. Arehart, E. Cinkilic, J. Chen, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, B. McSkimming, J. S. Speck, and S. A. Ringel, “Impact of proton irradiation on deep level states in n-GaN,” Applied Physics Letters, vol. 103, Jul 22 2013.

Z. C. Zhang, Y. Ren, L. Chen, N. J. Gaspard, A. F. Witulski, T. W. Holman, B. L. Bhuva, S. J. Wen, and R. Sammynaiken, “A Bulk Built-In Voltage Sensor to Detect Physical Location of Single-Event Transients,” Journal of Electronic Testing-Theory and Applications, vol. 29, pp. 249-253, Apr 2013.

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